Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1

article Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN published Mario Fabian Zscherp author Silas Aurel Jentsch author Marius Johannes Müller author Vitalii Lider author Celina Becker author Limei Chen author Mario Littmann author Falco Meier author Andreas Beyer author Detlev Michael Hofmann author Donat Josef As author 140000-0003-1121-3565 Peter Jens Klar author Kerstin Volz author Sangam Chatterjee author Jörg Schörmann author 15 department 230 department American Chemical Society (ACS)2023 eng General Materials Science ACS Applied Materials & Interfaces 1944-8244 1944-825210.1021/acsami.3c06319 153339513-39522 M.F. Zscherp, S.A. Jentsch, M.J. Müller, V. Lider, C. Becker, L. Chen, M. Littmann, F. Meier, A. Beyer, D.M. Hofmann, D.J. As, P.J. Klar, K. Volz, S. Chatterjee, J. Schörmann, ACS Applied Materials &amp; Interfaces 15 (2023) 39513–39522. Zscherp, Mario Fabian, Silas Aurel Jentsch, Marius Johannes Müller, Vitalii Lider, Celina Becker, Limei Chen, Mario Littmann, et al. “Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN.” ACS Applied Materials &amp; Interfaces 15, no. 33 (2023): 39513–22. <a href="https://doi.org/10.1021/acsami.3c06319">https://doi.org/10.1021/acsami.3c06319</a>. Zscherp, M. F., Jentsch, S. A., Müller, M. J., Lider, V., Becker, C., Chen, L., Littmann, M., Meier, F., Beyer, A., Hofmann, D. M., As, D. J., Klar, P. J., Volz, K., Chatterjee, S., & Schörmann, J. (2023). Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN. ACS Applied Materials &amp; Interfaces, 15(33), 39513–39522. <a href="https://doi.org/10.1021/acsami.3c06319">https://doi.org/10.1021/acsami.3c06319</a> M. F. Zscherp et al., “Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN,” ACS Applied Materials &amp; Interfaces, vol. 15, no. 33, pp. 39513–39522, 2023, doi: <a href="https://doi.org/10.1021/acsami.3c06319">10.1021/acsami.3c06319</a>. Zscherp MF, Jentsch SA, Müller MJ, et al. Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN. ACS Applied Materials &amp; Interfaces. 2023;15(33):39513-39522. doi:<a href="https://doi.org/10.1021/acsami.3c06319">10.1021/acsami.3c06319</a> @article{Zscherp_Jentsch_Müller_Lider_Becker_Chen_Littmann_Meier_Beyer_Hofmann_et al._2023, title={Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN}, volume={15}, DOI={<a href="https://doi.org/10.1021/acsami.3c06319">10.1021/acsami.3c06319</a>}, number={33}, journal={ACS Applied Materials &amp; Interfaces}, publisher={American Chemical Society (ACS)}, author={Zscherp, Mario Fabian and Jentsch, Silas Aurel and Müller, Marius Johannes and Lider, Vitalii and Becker, Celina and Chen, Limei and Littmann, Mario and Meier, Falco and Beyer, Andreas and Hofmann, Detlev Michael and et al.}, year={2023}, pages={39513–39522} } Zscherp, Mario Fabian, et al. “Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN.” ACS Applied Materials &amp; Interfaces, vol. 15, no. 33, American Chemical Society (ACS), 2023, pp. 39513–22, doi:<a href="https://doi.org/10.1021/acsami.3c06319">10.1021/acsami.3c06319</a>. 467412023-08-28T06:45:20Z2023-08-28T06:46:23Z