{"volume":255,"doi":"10.1002/pssb.201700373","publisher":"Wiley","citation":{"ama":"Wecker T, Callsen G, Hoffmann A, Reuter D, As DJ. Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells. physica status solidi (b). 2017;255(5). doi:10.1002/pssb.201700373","bibtex":"@article{Wecker_Callsen_Hoffmann_Reuter_As_2017, title={Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells}, volume={255}, DOI={10.1002/pssb.201700373}, number={51700373}, journal={physica status solidi (b)}, publisher={Wiley}, author={Wecker, Tobias and Callsen, Gordon and Hoffmann, Axel and Reuter, Dirk and As, Donat Josef}, year={2017} }","chicago":"Wecker, Tobias, Gordon Callsen, Axel Hoffmann, Dirk Reuter, and Donat Josef As. “Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells.” Physica Status Solidi (B) 255, no. 5 (2017). https://doi.org/10.1002/pssb.201700373.","short":"T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2017).","ieee":"T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, and D. J. As, “Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells,” physica status solidi (b), vol. 255, no. 5, 2017.","apa":"Wecker, T., Callsen, G., Hoffmann, A., Reuter, D., & As, D. J. (2017). Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells. Physica Status Solidi (B), 255(5). https://doi.org/10.1002/pssb.201700373","mla":"Wecker, Tobias, et al. “Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells.” Physica Status Solidi (B), vol. 255, no. 5, 1700373, Wiley, 2017, doi:10.1002/pssb.201700373."},"user_id":"14","publication":"physica status solidi (b)","issue":"5","date_created":"2018-10-24T07:59:23Z","title":"Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.36N Double Quantum Wells","type":"journal_article","article_number":"1700373","_id":"4808","intvolume":" 255","publication_identifier":{"issn":["0370-1972"]},"year":"2017","publication_status":"published","status":"public","author":[{"first_name":"Tobias","last_name":"Wecker","full_name":"Wecker, Tobias"},{"last_name":"Callsen","full_name":"Callsen, Gordon","first_name":"Gordon"},{"first_name":"Axel","last_name":"Hoffmann","full_name":"Hoffmann, Axel"},{"full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763","first_name":"Dirk"},{"id":"14","first_name":"Donat Josef","orcid":"0000-0003-1121-3565","full_name":"As, Donat Josef","last_name":"As"}],"date_updated":"2022-01-06T07:01:24Z"}