{"publication_status":"published","page":"309-313","date_updated":"2022-01-06T07:01:24Z","type":"journal_article","publication":"Journal of Luminescence","doi":"10.1016/j.jlumin.2018.02.051","author":[{"first_name":"Leonilson K.S.","full_name":"Herval, Leonilson K.S.","last_name":"Herval"},{"first_name":"Marcio P.F.","full_name":"de Godoy, Marcio P.F.","last_name":"de Godoy"},{"full_name":"Wecker, Tobias","last_name":"Wecker","first_name":"Tobias"},{"orcid":"0000-0003-1121-3565","first_name":"Donat Josef","full_name":"As, Donat Josef","last_name":"As","id":"14"}],"publisher":"Elsevier BV","status":"public","intvolume":"       198","year":"2018","user_id":"14","citation":{"ieee":"L. K. S. Herval, M. P. F. de Godoy, T. Wecker, and D. J. As, “Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures,” <i>Journal of Luminescence</i>, vol. 198, pp. 309–313, 2018.","ama":"Herval LKS, de Godoy MPF, Wecker T, As DJ. Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures. <i>Journal of Luminescence</i>. 2018;198:309-313. doi:<a href=\"https://doi.org/10.1016/j.jlumin.2018.02.051\">10.1016/j.jlumin.2018.02.051</a>","mla":"Herval, Leonilson K. S., et al. “Investigation on Interface-Related Defects by Photoluminescence of Cubic (Al)GaN/AlN Multi-Quantum Wells Structures.” <i>Journal of Luminescence</i>, vol. 198, Elsevier BV, 2018, pp. 309–13, doi:<a href=\"https://doi.org/10.1016/j.jlumin.2018.02.051\">10.1016/j.jlumin.2018.02.051</a>.","apa":"Herval, L. K. S., de Godoy, M. P. F., Wecker, T., &#38; As, D. J. (2018). Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures. <i>Journal of Luminescence</i>, <i>198</i>, 309–313. <a href=\"https://doi.org/10.1016/j.jlumin.2018.02.051\">https://doi.org/10.1016/j.jlumin.2018.02.051</a>","bibtex":"@article{Herval_de Godoy_Wecker_As_2018, title={Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures}, volume={198}, DOI={<a href=\"https://doi.org/10.1016/j.jlumin.2018.02.051\">10.1016/j.jlumin.2018.02.051</a>}, journal={Journal of Luminescence}, publisher={Elsevier BV}, author={Herval, Leonilson K.S. and de Godoy, Marcio P.F. and Wecker, Tobias and As, Donat Josef}, year={2018}, pages={309–313} }","chicago":"Herval, Leonilson K.S., Marcio P.F. de Godoy, Tobias Wecker, and Donat Josef As. “Investigation on Interface-Related Defects by Photoluminescence of Cubic (Al)GaN/AlN Multi-Quantum Wells Structures.” <i>Journal of Luminescence</i> 198 (2018): 309–13. <a href=\"https://doi.org/10.1016/j.jlumin.2018.02.051\">https://doi.org/10.1016/j.jlumin.2018.02.051</a>.","short":"L.K.S. Herval, M.P.F. de Godoy, T. Wecker, D.J. As, Journal of Luminescence 198 (2018) 309–313."},"date_created":"2018-10-24T08:00:01Z","_id":"4809","title":"Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures","publication_identifier":{"issn":["0022-2313"]},"volume":198}