{"publisher":"American Physical Society (APS)","keyword":["General Physics and Astronomy"],"type":"journal_article","oa":"1","article_number":"024007","citation":{"short":"M. Zahn, E. Beyreuther, I. Kiseleva, A.S. Lotfy, C.J. McCluskey, J.R. Maguire, A. Suna, M. Rüsing, J.M. Gregg, L.M. Eng, Physical Review Applied 21 (2024).","ama":"Zahn M, Beyreuther E, Kiseleva I, et al. Equivalent-circuit model that quantitatively describes domain-wall conductivity in ferroelectric lithium . Physical Review Applied. 2024;21(2). doi:10.1103/physrevapplied.21.024007","bibtex":"@article{Zahn_Beyreuther_Kiseleva_Lotfy_McCluskey_Maguire_Suna_Rüsing_Gregg_Eng_2024, title={Equivalent-circuit model that quantitatively describes domain-wall conductivity in ferroelectric lithium }, volume={21}, DOI={10.1103/physrevapplied.21.024007}, number={2024007}, journal={Physical Review Applied}, publisher={American Physical Society (APS)}, author={Zahn, Manuel and Beyreuther, Elke and Kiseleva, Iuliia and Lotfy, Ahmed Samir and McCluskey, Conor J. and Maguire, Jesi R. and Suna, Ahmet and Rüsing, Michael and Gregg, J. Marty and Eng, Lukas M.}, year={2024} }","ieee":"M. Zahn et al., “Equivalent-circuit model that quantitatively describes domain-wall conductivity in ferroelectric lithium ,” Physical Review Applied, vol. 21, no. 2, Art. no. 024007, 2024, doi: 10.1103/physrevapplied.21.024007.","mla":"Zahn, Manuel, et al. “Equivalent-Circuit Model That Quantitatively Describes Domain-Wall Conductivity in Ferroelectric Lithium .” Physical Review Applied, vol. 21, no. 2, 024007, American Physical Society (APS), 2024, doi:10.1103/physrevapplied.21.024007.","chicago":"Zahn, Manuel, Elke Beyreuther, Iuliia Kiseleva, Ahmed Samir Lotfy, Conor J. McCluskey, Jesi R. Maguire, Ahmet Suna, Michael Rüsing, J. Marty Gregg, and Lukas M. Eng. “Equivalent-Circuit Model That Quantitatively Describes Domain-Wall Conductivity in Ferroelectric Lithium .” Physical Review Applied 21, no. 2 (2024). https://doi.org/10.1103/physrevapplied.21.024007.","apa":"Zahn, M., Beyreuther, E., Kiseleva, I., Lotfy, A. S., McCluskey, C. J., Maguire, J. R., Suna, A., Rüsing, M., Gregg, J. M., & Eng, L. M. (2024). Equivalent-circuit model that quantitatively describes domain-wall conductivity in ferroelectric lithium . Physical Review Applied, 21(2), Article 024007. https://doi.org/10.1103/physrevapplied.21.024007"},"article_type":"original","_id":"51156","status":"public","year":"2024","user_id":"22501","publication":"Physical Review Applied","language":[{"iso":"eng"}],"quality_controlled":"1","volume":21,"department":[{"_id":"15"},{"_id":"169"},{"_id":"623"},{"_id":"288"}],"doi":"10.1103/physrevapplied.21.024007","date_created":"2024-02-06T08:02:15Z","publication_status":"published","author":[{"first_name":"Manuel","full_name":"Zahn, Manuel","last_name":"Zahn"},{"full_name":"Beyreuther, Elke","last_name":"Beyreuther","first_name":"Elke"},{"first_name":"Iuliia","last_name":"Kiseleva","full_name":"Kiseleva, Iuliia"},{"first_name":"Ahmed Samir","last_name":"Lotfy","full_name":"Lotfy, Ahmed Samir"},{"last_name":"McCluskey","full_name":"McCluskey, Conor J.","first_name":"Conor J."},{"last_name":"Maguire","full_name":"Maguire, Jesi R.","first_name":"Jesi R."},{"last_name":"Suna","full_name":"Suna, Ahmet","first_name":"Ahmet"},{"last_name":"Rüsing","full_name":"Rüsing, Michael","first_name":"Michael","id":"22501","orcid":"0000-0003-4682-4577"},{"first_name":"J. Marty","full_name":"Gregg, J. Marty","last_name":"Gregg"},{"last_name":"Eng","full_name":"Eng, Lukas M.","first_name":"Lukas M."}],"main_file_link":[{"url":"https://arxiv.org/abs/2307.10322","open_access":"1"}],"publication_identifier":{"issn":["2331-7019"]},"title":"Equivalent-circuit model that quantitatively describes domain-wall conductivity in ferroelectric lithium ","abstract":[{"text":"Ferroelectric domain wall (DW) conductivity (DWC) can be attributed to two separate mechanisms: (a) the injection/ejection of charge carriers across the Schottky barrier formed at the (metal-)electrode-DW junction and (b) the transport of those charge carriers along the DW. Current-voltage (I-U) characteristics, recorded at variable temperatures from LiNbO3 (LNO) DWs, are clearly able to differentiate between these two contributions. Practically, they allow us to directly quantify the physical parameters relevant to the two mechanisms (a) and (b) mentioned above. These are, for example, the resistance of the DW, the saturation current, the ideality factor, and the Schottky barrier height of the electrode-DW junction. Furthermore, the activation energies needed to initiate the thermally activated electronic transport along the DWs can be extracted. In addition, we show that electronic transport along LNO DWs can be elegantly viewed and interpreted in an adapted semiconductor picture based on a double-diode, double-resistor equivalent-circuit model, the R2D2 model. Finally, our R2D2 model was checked for its universality by successfully fitting the I-U curves of not only z-cut LNO bulk DWs, but equally of z-cut thin-film LNO DWs, and of x-cut thin-film DWs as reported in literature.","lang":"eng"}],"intvolume":" 21","issue":"2","date_updated":"2024-02-06T08:08:09Z"}