{"year":"2008","intvolume":" 93","citation":{"apa":"Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Ludwig, A., Reuter, D., Wieck, A. D., Schuster, E., Wende, H., Keune, W., Petracic, O., & Westerholt, K. (2008). Room temperature electrical spin injection in remanence. Applied Physics Letters, 93(2). https://doi.org/10.1063/1.2957469","ama":"Hövel S, Gerhardt NC, Hofmann MR, et al. Room temperature electrical spin injection in remanence. Applied Physics Letters. 2008;93(2). doi:10.1063/1.2957469","bibtex":"@article{Hövel_Gerhardt_Hofmann_Lo_Ludwig_Reuter_Wieck_Schuster_Wende_Keune_et al._2008, title={Room temperature electrical spin injection in remanence}, volume={93}, DOI={10.1063/1.2957469}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and Lo, F.-Y. and Ludwig, A. and Reuter, D. and Wieck, A. D. and Schuster, E. and Wende, H. and Keune, W. and et al.}, year={2008} }","short":"S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, A. Ludwig, D. Reuter, A.D. Wieck, E. Schuster, H. Wende, W. Keune, O. Petracic, K. Westerholt, Applied Physics Letters 93 (2008).","mla":"Hövel, S., et al. “Room Temperature Electrical Spin Injection in Remanence.” Applied Physics Letters, vol. 93, no. 2, AIP Publishing, 2008, doi:10.1063/1.2957469.","ieee":"S. Hövel et al., “Room temperature electrical spin injection in remanence,” Applied Physics Letters, vol. 93, no. 2, 2008, doi: 10.1063/1.2957469.","chicago":"Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, A. Ludwig, D. Reuter, A. D. Wieck, et al. “Room Temperature Electrical Spin Injection in Remanence.” Applied Physics Letters 93, no. 2 (2008). https://doi.org/10.1063/1.2957469."},"quality_controlled":"1","publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","issue":"2","title":"Room temperature electrical spin injection in remanence","doi":"10.1063/1.2957469","publisher":"AIP Publishing","date_updated":"2026-02-25T09:38:49Z","volume":93,"date_created":"2025-04-25T10:28:29Z","author":[{"full_name":"Hövel, S.","last_name":"Hövel","first_name":"S."},{"full_name":"Gerhardt, N. C.","last_name":"Gerhardt","first_name":"N. C."},{"first_name":"M. R.","last_name":"Hofmann","full_name":"Hofmann, M. R."},{"last_name":"Lo","full_name":"Lo, F.-Y.","first_name":"F.-Y."},{"last_name":"Ludwig","full_name":"Ludwig, A.","first_name":"A."},{"full_name":"Reuter, D.","last_name":"Reuter","first_name":"D."},{"first_name":"A. D.","full_name":"Wieck, A. D.","last_name":"Wieck"},{"last_name":"Schuster","full_name":"Schuster, E.","first_name":"E."},{"first_name":"H.","last_name":"Wende","full_name":"Wende, H."},{"first_name":"W.","full_name":"Keune, W.","last_name":"Keune"},{"full_name":"Petracic, O.","last_name":"Petracic","first_name":"O."},{"first_name":"K.","full_name":"Westerholt, K.","last_name":"Westerholt"}],"abstract":[{"text":"We demonstrate electrical spin injection from ferromagnetic Fe/Tb multilayer structures with remanent perpendicular magnetization into GaAs-based light-emitting diodes at room temperature. Using a reverse-biased Schottky contact and a MgO tunnel contact, respectively, we achieve spin injection at remanence. The maximum degree of circular polarization of the emitted light is 3% at room temperature.","lang":"eng"}],"status":"public","publication":"Applied Physics Letters","type":"journal_article","article_type":"original","language":[{"iso":"eng"}],"_id":"59695","user_id":"15911"}