---
_id: '61359'
abstract:
- lang: eng
  text: <jats:title>Abstract</jats:title><jats:p>The current efficiency records for
    generating green hydrogen via solar water splitting are held by indium phosphide
    (InP)‐based photo‐absorbers, protected by TiO<jats:sub>2</jats:sub> layers grown
    through atomic layer deposition (ALD). InP is also a leading material for photonic
    integrated circuits and computing, where ultrafast near‐surface behavior is key.
    A previous study described electronic pathways at the phosphorus‐rich (P‐rich)
    surface of p‐doped InP(100) using time‐resolved two‐photon photoemission (tr‐2PPE)
    spectroscopy. Here, the intricate electron pathways of the P‐rich InP surface
    modified with ALD‐deposited TiO<jats:sub>2</jats:sub> are explored. Photoexcited
    bulk InP electrons migrate through a bulk‐to‐surface transition cluster of states
    and surface states and inject into the TiO<jats:sub>2</jats:sub> conduction band
    (CB). Energy levels and occupation dynamics of CB states in P‐rich InP and TiO<jats:sub>2</jats:sub>
    adlayers are observed, with discrete states preserved up to 10 nm TiO<jats:sub>2</jats:sub>
    deposition. Thermalization lifetimes of excited electrons &gt; 0.8 eV above the
    InP conduction band minimum (CBM) are preserved for layer thicknesses up to 2.5 nm.
    Annealing at 300 °C to achieve crystalline TiO<jats:sub>2</jats:sub> reconstructions
    destroys interfacial states, affecting charge transfer. These observations enable
    innovative engineering of the P‐rich InP/TiO<jats:sub>2</jats:sub> heterointerface,
    opening new possibilities for studying hot‐carrier extraction, adsorbate effects,
    surface plasmons, and improving photovoltaic and PEC water‐splitting devices.</jats:p>
article_number: '2409455'
author:
- first_name: Jonathan
  full_name: Diederich, Jonathan
  last_name: Diederich
- first_name: Jennifer Velazquez
  full_name: Rojas, Jennifer Velazquez
  last_name: Rojas
- first_name: Agnieszka
  full_name: Paszuk, Agnieszka
  last_name: Paszuk
- first_name: Mohammad Amin Zare
  full_name: Pour, Mohammad Amin Zare
  last_name: Pour
- first_name: Christian
  full_name: Höhn, Christian
  last_name: Höhn
- first_name: Isaac Azahel Ruiz
  full_name: Alvarado, Isaac Azahel Ruiz
  last_name: Alvarado
- first_name: Klaus
  full_name: Schwarzburg, Klaus
  last_name: Schwarzburg
- first_name: David
  full_name: Ostheimer, David
  last_name: Ostheimer
- first_name: Rainer
  full_name: Eichberger, Rainer
  last_name: Eichberger
- first_name: Wolf Gero
  full_name: Schmidt, Wolf Gero
  id: '468'
  last_name: Schmidt
  orcid: 0000-0002-2717-5076
- first_name: Thomas
  full_name: Hannappel, Thomas
  last_name: Hannappel
- first_name: Roel
  full_name: van de Krol, Roel
  last_name: van de Krol
- first_name: Dennis
  full_name: Friedrich, Dennis
  last_name: Friedrich
citation:
  ama: Diederich J, Rojas JV, Paszuk A, et al. Ultrafast Electron Dynamics at the
    P‐rich Indium Phosphide/TiO<sub>2</sub> Interface. <i>Advanced Functional Materials</i>.
    2024;34(49). doi:<a href="https://doi.org/10.1002/adfm.202409455">10.1002/adfm.202409455</a>
  apa: Diederich, J., Rojas, J. V., Paszuk, A., Pour, M. A. Z., Höhn, C., Alvarado,
    I. A. R., Schwarzburg, K., Ostheimer, D., Eichberger, R., Schmidt, W. G., Hannappel,
    T., van de Krol, R., &#38; Friedrich, D. (2024). Ultrafast Electron Dynamics at
    the P‐rich Indium Phosphide/TiO<sub>2</sub> Interface. <i>Advanced Functional
    Materials</i>, <i>34</i>(49), Article 2409455. <a href="https://doi.org/10.1002/adfm.202409455">https://doi.org/10.1002/adfm.202409455</a>
  bibtex: '@article{Diederich_Rojas_Paszuk_Pour_Höhn_Alvarado_Schwarzburg_Ostheimer_Eichberger_Schmidt_et
    al._2024, title={Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO<sub>2</sub>
    Interface}, volume={34}, DOI={<a href="https://doi.org/10.1002/adfm.202409455">10.1002/adfm.202409455</a>},
    number={492409455}, journal={Advanced Functional Materials}, publisher={Wiley},
    author={Diederich, Jonathan and Rojas, Jennifer Velazquez and Paszuk, Agnieszka
    and Pour, Mohammad Amin Zare and Höhn, Christian and Alvarado, Isaac Azahel Ruiz
    and Schwarzburg, Klaus and Ostheimer, David and Eichberger, Rainer and Schmidt,
    Wolf Gero and et al.}, year={2024} }'
  chicago: Diederich, Jonathan, Jennifer Velazquez Rojas, Agnieszka Paszuk, Mohammad
    Amin Zare Pour, Christian Höhn, Isaac Azahel Ruiz Alvarado, Klaus Schwarzburg,
    et al. “Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO<sub>2</sub>
    Interface.” <i>Advanced Functional Materials</i> 34, no. 49 (2024). <a href="https://doi.org/10.1002/adfm.202409455">https://doi.org/10.1002/adfm.202409455</a>.
  ieee: 'J. Diederich <i>et al.</i>, “Ultrafast Electron Dynamics at the P‐rich Indium
    Phosphide/TiO<sub>2</sub> Interface,” <i>Advanced Functional Materials</i>, vol.
    34, no. 49, Art. no. 2409455, 2024, doi: <a href="https://doi.org/10.1002/adfm.202409455">10.1002/adfm.202409455</a>.'
  mla: Diederich, Jonathan, et al. “Ultrafast Electron Dynamics at the P‐rich Indium
    Phosphide/TiO<sub>2</sub> Interface.” <i>Advanced Functional Materials</i>, vol.
    34, no. 49, 2409455, Wiley, 2024, doi:<a href="https://doi.org/10.1002/adfm.202409455">10.1002/adfm.202409455</a>.
  short: J. Diederich, J.V. Rojas, A. Paszuk, M.A.Z. Pour, C. Höhn, I.A.R. Alvarado,
    K. Schwarzburg, D. Ostheimer, R. Eichberger, W.G. Schmidt, T. Hannappel, R. van
    de Krol, D. Friedrich, Advanced Functional Materials 34 (2024).
date_created: 2025-09-18T11:37:51Z
date_updated: 2025-12-05T13:35:09Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '35'
- _id: '230'
doi: 10.1002/adfm.202409455
intvolume: '        34'
issue: '49'
language:
- iso: eng
publication: Advanced Functional Materials
publication_identifier:
  issn:
  - 1616-301X
  - 1616-3028
publication_status: published
publisher: Wiley
status: public
title: Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO<sub>2</sub>
  Interface
type: journal_article
user_id: '16199'
volume: 34
year: '2024'
...