{"status":"public","author":[{"id":"39217","first_name":"Tobias","last_name":"Schwabe","full_name":"Schwabe, Tobias"},{"last_name":"Kress","full_name":"Kress, Christian","orcid":"0000-0002-4403-2237","id":"13256","first_name":"Christian"},{"last_name":"Kruse","full_name":"Kruse, Stephan","id":"38254","first_name":"Stephan"},{"id":"44271","first_name":"Maxim","full_name":"Weizel, Maxim","orcid":"0000-0003-2699-9839","last_name":"Weizel"},{"first_name":"Hanjo","last_name":"Rhee","full_name":"Rhee, Hanjo"},{"id":"37144","first_name":"J. Christoph","last_name":"Scheytt","orcid":"0000-0002-5950-6618 ","full_name":"Scheytt, J. Christoph"}],"department":[{"_id":"58"}],"doi":"10.1109/JLT.2024.3450949","language":[{"iso":"eng"}],"intvolume":"        43","date_created":"2025-11-27T07:14:34Z","date_updated":"2025-11-27T07:16:01Z","type":"journal_article","volume":43,"citation":{"chicago":"Schwabe, Tobias, Christian Kress, Stephan Kruse, Maxim Weizel, Hanjo Rhee, and J. Christoph Scheytt. “Forward-Biased Silicon Phase Shifter Modeling for Electronic-Photonic Co-Simulation and Validation in a 250 Nm EPIC BiCMOS Technology.” <i>Journal of Lightwave Technology</i> 43, no. 1 (2025): 255–70. <a href=\"https://doi.org/10.1109/JLT.2024.3450949\">https://doi.org/10.1109/JLT.2024.3450949</a>.","apa":"Schwabe, T., Kress, C., Kruse, S., Weizel, M., Rhee, H., &#38; Scheytt, J. C. (2025). Forward-Biased Silicon Phase Shifter Modeling for Electronic-Photonic Co-Simulation and Validation in a 250 nm EPIC BiCMOS Technology. <i>Journal of Lightwave Technology</i>, <i>43</i>(1), 255–270. <a href=\"https://doi.org/10.1109/JLT.2024.3450949\">https://doi.org/10.1109/JLT.2024.3450949</a>","short":"T. Schwabe, C. Kress, S. Kruse, M. Weizel, H. Rhee, J.C. Scheytt, Journal of Lightwave Technology 43 (2025) 255–270.","ama":"Schwabe T, Kress C, Kruse S, Weizel M, Rhee H, Scheytt JC. Forward-Biased Silicon Phase Shifter Modeling for Electronic-Photonic Co-Simulation and Validation in a 250 nm EPIC BiCMOS Technology. <i>Journal of Lightwave Technology</i>. 2025;43(1):255-270. doi:<a href=\"https://doi.org/10.1109/JLT.2024.3450949\">10.1109/JLT.2024.3450949</a>","bibtex":"@article{Schwabe_Kress_Kruse_Weizel_Rhee_Scheytt_2025, title={Forward-Biased Silicon Phase Shifter Modeling for Electronic-Photonic Co-Simulation and Validation in a 250 nm EPIC BiCMOS Technology}, volume={43}, DOI={<a href=\"https://doi.org/10.1109/JLT.2024.3450949\">10.1109/JLT.2024.3450949</a>}, number={1}, journal={Journal of Lightwave Technology}, author={Schwabe, Tobias and Kress, Christian and Kruse, Stephan and Weizel, Maxim and Rhee, Hanjo and Scheytt, J. Christoph}, year={2025}, pages={255–270} }","ieee":"T. Schwabe, C. Kress, S. Kruse, M. Weizel, H. Rhee, and J. C. Scheytt, “Forward-Biased Silicon Phase Shifter Modeling for Electronic-Photonic Co-Simulation and Validation in a 250 nm EPIC BiCMOS Technology,” <i>Journal of Lightwave Technology</i>, vol. 43, no. 1, pp. 255–270, 2025, doi: <a href=\"https://doi.org/10.1109/JLT.2024.3450949\">10.1109/JLT.2024.3450949</a>.","mla":"Schwabe, Tobias, et al. “Forward-Biased Silicon Phase Shifter Modeling for Electronic-Photonic Co-Simulation and Validation in a 250 Nm EPIC BiCMOS Technology.” <i>Journal of Lightwave Technology</i>, vol. 43, no. 1, 2025, pp. 255–70, doi:<a href=\"https://doi.org/10.1109/JLT.2024.3450949\">10.1109/JLT.2024.3450949</a>."},"title":"Forward-Biased Silicon Phase Shifter Modeling for Electronic-Photonic Co-Simulation and Validation in a 250 nm EPIC BiCMOS Technology","_id":"62643","keyword":["Integrated circuit modeling","Capacitance","Silicon","Modulation","Adaptation models","Semiconductor device modeling","Bandwidth","Data communication","electrooptical transmitter","equalization","free-carrier-plasma dispersion effect","modelling","optical modulator","phase shifter","silicon photonics"],"page":"255-270","year":"2025","issue":"1","user_id":"38254","publication":"Journal of Lightwave Technology"}