---
_id: '62866'
abstract:
- lang: eng
text: "Abstract\r\n \r\n The
development of efficient and broadly applicable n‐doping strategies for organic
semiconductors (OSCs) is crucial for advancing the performance of various organic
electronic devices. Here, a novel nucleophilic‐attack n‐doping mechanism is unveiled
that achieves exceptionally high conductivity in doped OSC films and demonstrates
broad applicability across OSCs. The remarkable efficacy of n‐Butyl lithium (n‐BuLi)
is highlighted in n‐doping C\r\n 60\r\n
\ and PC\r\n 61\r\n
\ BM, achieving a conductivity of 1.27 S cm\r\n −1\r\n
\ and 2.57 S cm\r\n −1\r\n
\ , respectively, which are among the highest reported values
for these materials. The investigation reveals that the n‐BuLi anion interacts
with electron‐deficient units in OSCs, generating a carbanion that facilitates
efficient electron transfer for n‐doping. This mechanism is further validated
across diverse fullerenes, polymeric, and small molecule OSCs, and is extendable
to other high‐performance dopants such as tert‐Butyllithium (tert‐BuLi) and sodium
ethoxide (NaOEt). Device studies show that n‐BuLi‐doped C\r\n 60\r\n
\ enables substantially improved diode rectification, attributed
to greater junction built‐in potential. These findings establish a unified chemical‐bonding‐based
n‐doping paradigm, complementing existing electrophilic‐attack p‐doping concepts,
and pave the way for achieving efficient doping of OSCs for advanced organic electronic
applications.\r\n "
article_number: e20487
author:
- first_name: Huan
full_name: Wei, Huan
last_name: Wei
- first_name: Tong
full_name: Wu, Tong
last_name: Wu
- first_name: Chuanding
full_name: Dong, Chuanding
last_name: Dong
- first_name: Chen
full_name: Chen, Chen
last_name: Chen
- first_name: Zhenqi
full_name: Gong, Zhenqi
last_name: Gong
- first_name: Jiangnan
full_name: Xia, Jiangnan
last_name: Xia
- first_name: Chengyuan
full_name: Peng, Chengyuan
last_name: Peng
- first_name: Jiaqi
full_name: Ding, Jiaqi
last_name: Ding
- first_name: Yu
full_name: Zhang, Yu
last_name: Zhang
- first_name: Wenpei
full_name: Shi, Wenpei
last_name: Shi
- first_name: Stefan
full_name: Schumacher, Stefan
id: '27271'
last_name: Schumacher
orcid: 0000-0003-4042-4951
- first_name: Xue
full_name: Zhang, Xue
last_name: Zhang
- first_name: Yugang
full_name: Bai, Yugang
last_name: Bai
- first_name: Lang
full_name: Jiang, Lang
last_name: Jiang
- first_name: Lei
full_name: Liao, Lei
last_name: Liao
- first_name: Thuc‐Quyen
full_name: Nguyen, Thuc‐Quyen
last_name: Nguyen
- first_name: Yuanyuan
full_name: Hu, Yuanyuan
last_name: Hu
citation:
ama: Wei H, Wu T, Dong C, et al. Efficient n‐Doping of Organic Semiconductors via
a Broadly Applicable Nucleophilic‐Attack Mechanism. Advanced Science. Published
online 2025. doi:10.1002/advs.202520487
apa: Wei, H., Wu, T., Dong, C., Chen, C., Gong, Z., Xia, J., Peng, C., Ding, J.,
Zhang, Y., Shi, W., Schumacher, S., Zhang, X., Bai, Y., Jiang, L., Liao, L., Nguyen,
T., & Hu, Y. (2025). Efficient n‐Doping of Organic Semiconductors via a Broadly
Applicable Nucleophilic‐Attack Mechanism. Advanced Science, Article e20487.
https://doi.org/10.1002/advs.202520487
bibtex: '@article{Wei_Wu_Dong_Chen_Gong_Xia_Peng_Ding_Zhang_Shi_et al._2025, title={Efficient
n‐Doping of Organic Semiconductors via a Broadly Applicable Nucleophilic‐Attack
Mechanism}, DOI={10.1002/advs.202520487},
number={e20487}, journal={Advanced Science}, publisher={Wiley}, author={Wei, Huan
and Wu, Tong and Dong, Chuanding and Chen, Chen and Gong, Zhenqi and Xia, Jiangnan
and Peng, Chengyuan and Ding, Jiaqi and Zhang, Yu and Shi, Wenpei and et al.},
year={2025} }'
chicago: Wei, Huan, Tong Wu, Chuanding Dong, Chen Chen, Zhenqi Gong, Jiangnan Xia,
Chengyuan Peng, et al. “Efficient N‐Doping of Organic Semiconductors via a Broadly
Applicable Nucleophilic‐Attack Mechanism.” Advanced Science, 2025. https://doi.org/10.1002/advs.202520487.
ieee: 'H. Wei et al., “Efficient n‐Doping of Organic Semiconductors via a
Broadly Applicable Nucleophilic‐Attack Mechanism,” Advanced Science, Art.
no. e20487, 2025, doi: 10.1002/advs.202520487.'
mla: Wei, Huan, et al. “Efficient N‐Doping of Organic Semiconductors via a Broadly
Applicable Nucleophilic‐Attack Mechanism.” Advanced Science, e20487, Wiley,
2025, doi:10.1002/advs.202520487.
short: H. Wei, T. Wu, C. Dong, C. Chen, Z. Gong, J. Xia, C. Peng, J. Ding, Y. Zhang,
W. Shi, S. Schumacher, X. Zhang, Y. Bai, L. Jiang, L. Liao, T. Nguyen, Y. Hu,
Advanced Science (2025).
date_created: 2025-12-04T12:30:39Z
date_updated: 2025-12-05T13:40:48Z
department:
- _id: '15'
- _id: '170'
- _id: '297'
- _id: '705'
- _id: '35'
- _id: '230'
doi: 10.1002/advs.202520487
language:
- iso: eng
publication: Advanced Science
publication_identifier:
issn:
- 2198-3844
- 2198-3844
publication_status: published
publisher: Wiley
status: public
title: Efficient n‐Doping of Organic Semiconductors via a Broadly Applicable Nucleophilic‐Attack
Mechanism
type: journal_article
user_id: '16199'
year: '2025'
...