{"language":[{"iso":"eng"}],"department":[{"_id":"977"}],"user_id":"15911","_id":"64515","status":"public","publication":"Device Research Conference","type":"conference","doi":"10.1109/drc.2009.5354936","title":"Laser operation of III/V compound material Ga(NAsP) grown lattice-matched on (001) Si substrate","author":[{"orcid":"0009-0002-5538-231X","last_name":"Gerhardt","id":"115298","full_name":"Gerhardt, Nils Christopher","first_name":"Nils Christopher"},{"first_name":"Nektarios","last_name":"Koukourakis","full_name":"Koukourakis, Nektarios"},{"first_name":"Martin","full_name":"Hofmann, Martin","last_name":"Hofmann"},{"full_name":"Kunert, Bernadette","last_name":"Kunert","first_name":"Bernadette"},{"first_name":"Siegfried","last_name":"Liebich","full_name":"Liebich, Siegfried"},{"last_name":"Zinnkann","full_name":"Zinnkann, Steffen","first_name":"Steffen"},{"first_name":"Robert","last_name":"Nemeth","full_name":"Nemeth, Robert"},{"first_name":"R.","full_name":"Fritz, R.","last_name":"Fritz"},{"first_name":"Kerstin","last_name":"Volz","full_name":"Volz, Kerstin"},{"first_name":"Wolfgang","last_name":"Stolz","full_name":"Stolz, Wolfgang"},{"first_name":"Christoph","last_name":"Lange","full_name":"Lange, Christoph"},{"first_name":"Niko S.","last_name":"Köster","full_name":"Köster, Niko S."},{"first_name":"Daniel J.","full_name":"Franzbach, Daniel J.","last_name":"Franzbach"},{"last_name":"Chatterjee","full_name":"Chatterjee, Sati Nath","first_name":"Sati Nath"},{"first_name":"Wolfgang W.","last_name":"Rühle","full_name":"Rühle, Wolfgang W."}],"date_created":"2026-02-20T10:04:29Z","date_updated":"2026-02-20T10:44:29Z","page":"193 - 194","citation":{"short":"N.C. Gerhardt, N. Koukourakis, M. Hofmann, B. Kunert, S. Liebich, S. Zinnkann, R. Nemeth, R. Fritz, K. Volz, W. Stolz, C. Lange, N.S. Köster, D.J. Franzbach, S.N. Chatterjee, W.W. Rühle, in: Device Research Conference, 2009, pp. 193–194.","bibtex":"@inproceedings{Gerhardt_Koukourakis_Hofmann_Kunert_Liebich_Zinnkann_Nemeth_Fritz_Volz_Stolz_et al._2009, title={Laser operation of III/V compound material Ga(NAsP) grown lattice-matched on (001) Si substrate}, DOI={<a href=\"https://doi.org/10.1109/drc.2009.5354936\">10.1109/drc.2009.5354936</a>}, booktitle={Device Research Conference}, author={Gerhardt, Nils Christopher and Koukourakis, Nektarios and Hofmann, Martin and Kunert, Bernadette and Liebich, Siegfried and Zinnkann, Steffen and Nemeth, Robert and Fritz, R. and Volz, Kerstin and Stolz, Wolfgang and et al.}, year={2009}, pages={193–194} }","mla":"Gerhardt, Nils Christopher, et al. “Laser Operation of III/V Compound Material Ga(NAsP) Grown Lattice-Matched on (001) Si Substrate.” <i>Device Research Conference</i>, 2009, pp. 193–94, doi:<a href=\"https://doi.org/10.1109/drc.2009.5354936\">10.1109/drc.2009.5354936</a>.","apa":"Gerhardt, N. C., Koukourakis, N., Hofmann, M., Kunert, B., Liebich, S., Zinnkann, S., Nemeth, R., Fritz, R., Volz, K., Stolz, W., Lange, C., Köster, N. S., Franzbach, D. J., Chatterjee, S. N., &#38; Rühle, W. W. (2009). Laser operation of III/V compound material Ga(NAsP) grown lattice-matched on (001) Si substrate. <i>Device Research Conference</i>, 193–194. <a href=\"https://doi.org/10.1109/drc.2009.5354936\">https://doi.org/10.1109/drc.2009.5354936</a>","ama":"Gerhardt NC, Koukourakis N, Hofmann M, et al. Laser operation of III/V compound material Ga(NAsP) grown lattice-matched on (001) Si substrate. In: <i>Device Research Conference</i>. ; 2009:193-194. doi:<a href=\"https://doi.org/10.1109/drc.2009.5354936\">10.1109/drc.2009.5354936</a>","chicago":"Gerhardt, Nils Christopher, Nektarios Koukourakis, Martin Hofmann, Bernadette Kunert, Siegfried Liebich, Steffen Zinnkann, Robert Nemeth, et al. “Laser Operation of III/V Compound Material Ga(NAsP) Grown Lattice-Matched on (001) Si Substrate.” In <i>Device Research Conference</i>, 193–94, 2009. <a href=\"https://doi.org/10.1109/drc.2009.5354936\">https://doi.org/10.1109/drc.2009.5354936</a>.","ieee":"N. C. Gerhardt <i>et al.</i>, “Laser operation of III/V compound material Ga(NAsP) grown lattice-matched on (001) Si substrate,” in <i>Device Research Conference</i>, 2009, pp. 193–194, doi: <a href=\"https://doi.org/10.1109/drc.2009.5354936\">10.1109/drc.2009.5354936</a>."},"year":"2009"}