{"citation":{"bibtex":"@article{Gerhardt_Koukourakis_Hofmann_Kunert_Nemeth_Zinnkann_Lukin_Adams_Fritz_Volz_et al._2009, title={Op­ti­cal ve­ri­fi­ca­ti­on of gain in Ga(NAsP)/(BGa)(AsP) mul­ti-quan­tum-well he­te­rost­ruc­tu­res mo­no­li­thi­cal­ly grown lat­ti­ce-mat­ched on (001) si­li­con sub­stra­te}, journal={Papers presented at the 35th International Symposium on Compound Semiconductors (ISCS 2008), Rust, Germany, 21 - 24 September 2008}, author={Gerhardt, Nils Christopher and Koukourakis, Nektarios and Hofmann, Martin and Kunert, Bernadette and Nemeth, Igor and Zinnkann, Steffen and Lukin, G. and Adams, Troy B. and Fritz, R. and Volz, Kerstin and et al.}, year={2009}, pages={1349–1523} }","mla":"Gerhardt, Nils Christopher, et al. “Op­ti­cal Ve­ri­fi­ca­ti­on of Gain in Ga(NAsP)/(BGa)(AsP) Mul­ti-Quan­tum-Well He­te­rost­ruc­tu­res Mo­no­li­thi­cal­ly Grown Lat­ti­ce-Mat­ched on (001) Si­li­con Sub­stra­te.” Papers Presented at the 35th International Symposium on Compound Semiconductors (ISCS 2008), Rust, Germany, 21 - 24 September 2008, 2009, pp. 1349–523.","short":"N.C. Gerhardt, N. Koukourakis, M. Hofmann, B. Kunert, I. Nemeth, S. Zinnkann, G. Lukin, T.B. Adams, R. Fritz, K. Volz, W. Stolz, C. Lange, N.S. Koester, D.J. Franzbach, S.N. Chatterjee, W.W. Rühle, Papers Presented at the 35th International Symposium on Compound Semiconductors (ISCS 2008), Rust, Germany, 21 - 24 September 2008 (2009) 1349–1523.","apa":"Gerhardt, N. C., Koukourakis, N., Hofmann, M., Kunert, B., Nemeth, I., Zinnkann, S., Lukin, G., Adams, T. B., Fritz, R., Volz, K., Stolz, W., Lange, C., Koester, N. S., Franzbach, D. J., Chatterjee, S. N., & Rühle, W. W. (2009). Op­ti­cal ve­ri­fi­ca­ti­on of gain in Ga(NAsP)/(BGa)(AsP) mul­ti-quan­tum-well he­te­rost­ruc­tu­res mo­no­li­thi­cal­ly grown lat­ti­ce-mat­ched on (001) si­li­con sub­stra­te. Papers Presented at the 35th International Symposium on Compound Semiconductors (ISCS 2008), Rust, Germany, 21 - 24 September 2008, 1349–1523.","chicago":"Gerhardt, Nils Christopher, Nektarios Koukourakis, Martin Hofmann, Bernadette Kunert, Igor Nemeth, Steffen Zinnkann, G. Lukin, et al. “Op­ti­cal Ve­ri­fi­ca­ti­on of Gain in Ga(NAsP)/(BGa)(AsP) Mul­ti-Quan­tum-Well He­te­rost­ruc­tu­res Mo­no­li­thi­cal­ly Grown Lat­ti­ce-Mat­ched on (001) Si­li­con Sub­stra­te.” Papers Presented at the 35th International Symposium on Compound Semiconductors (ISCS 2008), Rust, Germany, 21 - 24 September 2008, 2009, 1349–1523.","ieee":"N. C. Gerhardt et al., “Op­ti­cal ve­ri­fi­ca­ti­on of gain in Ga(NAsP)/(BGa)(AsP) mul­ti-quan­tum-well he­te­rost­ruc­tu­res mo­no­li­thi­cal­ly grown lat­ti­ce-mat­ched on (001) si­li­con sub­stra­te,” Papers presented at the 35th International Symposium on Compound Semiconductors (ISCS 2008), Rust, Germany, 21 - 24 September 2008, pp. 1349–1523, 2009.","ama":"Gerhardt NC, Koukourakis N, Hofmann M, et al. Op­ti­cal ve­ri­fi­ca­ti­on of gain in Ga(NAsP)/(BGa)(AsP) mul­ti-quan­tum-well he­te­rost­ruc­tu­res mo­no­li­thi­cal­ly grown lat­ti­ce-mat­ched on (001) si­li­con sub­stra­te. Papers presented at the 35th International Symposium on Compound Semiconductors (ISCS 2008), Rust, Germany, 21 - 24 September 2008. Published online 2009:1349-1523."},"page":"1349 - 1523","year":"2009","title":"Op­ti­cal ve­ri­fi­ca­ti­on of gain in Ga(NAsP)/(BGa)(AsP) mul­ti-quan­tum-well he­te­rost­ruc­tu­res mo­no­li­thi­cal­ly grown lat­ti­ce-mat­ched on (001) si­li­con sub­stra­te","date_created":"2026-02-20T10:04:30Z","author":[{"id":"115298","full_name":"Gerhardt, Nils Christopher","orcid":"0009-0002-5538-231X","last_name":"Gerhardt","first_name":"Nils Christopher"},{"full_name":"Koukourakis, Nektarios","last_name":"Koukourakis","first_name":"Nektarios"},{"full_name":"Hofmann, Martin","last_name":"Hofmann","first_name":"Martin"},{"first_name":"Bernadette","full_name":"Kunert, Bernadette","last_name":"Kunert"},{"first_name":"Igor","full_name":"Nemeth, Igor","last_name":"Nemeth"},{"full_name":"Zinnkann, Steffen","last_name":"Zinnkann","first_name":"Steffen"},{"full_name":"Lukin, G.","last_name":"Lukin","first_name":"G."},{"first_name":"Troy B.","last_name":"Adams","full_name":"Adams, Troy B."},{"first_name":"R.","last_name":"Fritz","full_name":"Fritz, R."},{"first_name":"Kerstin","full_name":"Volz, Kerstin","last_name":"Volz"},{"first_name":"Wolfgang","last_name":"Stolz","full_name":"Stolz, Wolfgang"},{"first_name":"Christoph","last_name":"Lange","full_name":"Lange, Christoph"},{"first_name":"N. S.","full_name":"Koester, N. S.","last_name":"Koester"},{"first_name":"Daniel J.","full_name":"Franzbach, Daniel J.","last_name":"Franzbach"},{"full_name":"Chatterjee, Sati Nath","last_name":"Chatterjee","first_name":"Sati Nath"},{"last_name":"Rühle","full_name":"Rühle, Wolfgang W.","first_name":"Wolfgang W."}],"date_updated":"2026-02-20T10:39:16Z","status":"public","type":"journal_article","publication":"Papers presented at the 35th International Symposium on Compound Semiconductors (ISCS 2008), Rust, Germany, 21 - 24 September 2008","language":[{"iso":"eng"}],"user_id":"15911","department":[{"_id":"977"}],"_id":"64520"}