{"citation":{"bibtex":"@article{Gerhardt_Koukourakis_Hofmann_Kunert_Nemeth_Zinnkann_Lukin_Adams_Fritz_Volz_et al._2009, title={Optical verification of gain in Ga(NAsP)/(BGa)(AsP) multi-quantum-well heterostructures monolithically grown lattice-matched on (001) silicon substrate}, journal={Papers presented at the 35th International Symposium on Compound Semiconductors (ISCS 2008), Rust, Germany, 21 - 24 September 2008}, author={Gerhardt, Nils Christopher and Koukourakis, Nektarios and Hofmann, Martin and Kunert, Bernadette and Nemeth, Igor and Zinnkann, Steffen and Lukin, G. and Adams, Troy B. and Fritz, R. and Volz, Kerstin and et al.}, year={2009}, pages={1349–1523} }","mla":"Gerhardt, Nils Christopher, et al. “Optical Verification of Gain in Ga(NAsP)/(BGa)(AsP) Multi-Quantum-Well Heterostructures Monolithically Grown Lattice-Matched on (001) Silicon Substrate.” Papers Presented at the 35th International Symposium on Compound Semiconductors (ISCS 2008), Rust, Germany, 21 - 24 September 2008, 2009, pp. 1349–523.","short":"N.C. Gerhardt, N. Koukourakis, M. Hofmann, B. Kunert, I. Nemeth, S. Zinnkann, G. Lukin, T.B. Adams, R. Fritz, K. Volz, W. Stolz, C. Lange, N.S. Koester, D.J. Franzbach, S.N. Chatterjee, W.W. Rühle, Papers Presented at the 35th International Symposium on Compound Semiconductors (ISCS 2008), Rust, Germany, 21 - 24 September 2008 (2009) 1349–1523.","apa":"Gerhardt, N. C., Koukourakis, N., Hofmann, M., Kunert, B., Nemeth, I., Zinnkann, S., Lukin, G., Adams, T. B., Fritz, R., Volz, K., Stolz, W., Lange, C., Koester, N. S., Franzbach, D. J., Chatterjee, S. N., & Rühle, W. W. (2009). Optical verification of gain in Ga(NAsP)/(BGa)(AsP) multi-quantum-well heterostructures monolithically grown lattice-matched on (001) silicon substrate. Papers Presented at the 35th International Symposium on Compound Semiconductors (ISCS 2008), Rust, Germany, 21 - 24 September 2008, 1349–1523.","chicago":"Gerhardt, Nils Christopher, Nektarios Koukourakis, Martin Hofmann, Bernadette Kunert, Igor Nemeth, Steffen Zinnkann, G. Lukin, et al. “Optical Verification of Gain in Ga(NAsP)/(BGa)(AsP) Multi-Quantum-Well Heterostructures Monolithically Grown Lattice-Matched on (001) Silicon Substrate.” Papers Presented at the 35th International Symposium on Compound Semiconductors (ISCS 2008), Rust, Germany, 21 - 24 September 2008, 2009, 1349–1523.","ieee":"N. C. Gerhardt et al., “Optical verification of gain in Ga(NAsP)/(BGa)(AsP) multi-quantum-well heterostructures monolithically grown lattice-matched on (001) silicon substrate,” Papers presented at the 35th International Symposium on Compound Semiconductors (ISCS 2008), Rust, Germany, 21 - 24 September 2008, pp. 1349–1523, 2009.","ama":"Gerhardt NC, Koukourakis N, Hofmann M, et al. Optical verification of gain in Ga(NAsP)/(BGa)(AsP) multi-quantum-well heterostructures monolithically grown lattice-matched on (001) silicon substrate. Papers presented at the 35th International Symposium on Compound Semiconductors (ISCS 2008), Rust, Germany, 21 - 24 September 2008. Published online 2009:1349-1523."},"page":"1349 - 1523","year":"2009","title":"Optical verification of gain in Ga(NAsP)/(BGa)(AsP) multi-quantum-well heterostructures monolithically grown lattice-matched on (001) silicon substrate","date_created":"2026-02-20T10:04:30Z","author":[{"id":"115298","full_name":"Gerhardt, Nils Christopher","orcid":"0009-0002-5538-231X","last_name":"Gerhardt","first_name":"Nils Christopher"},{"full_name":"Koukourakis, Nektarios","last_name":"Koukourakis","first_name":"Nektarios"},{"full_name":"Hofmann, Martin","last_name":"Hofmann","first_name":"Martin"},{"first_name":"Bernadette","full_name":"Kunert, Bernadette","last_name":"Kunert"},{"first_name":"Igor","full_name":"Nemeth, Igor","last_name":"Nemeth"},{"full_name":"Zinnkann, Steffen","last_name":"Zinnkann","first_name":"Steffen"},{"full_name":"Lukin, G.","last_name":"Lukin","first_name":"G."},{"first_name":"Troy B.","last_name":"Adams","full_name":"Adams, Troy B."},{"first_name":"R.","last_name":"Fritz","full_name":"Fritz, R."},{"first_name":"Kerstin","full_name":"Volz, Kerstin","last_name":"Volz"},{"first_name":"Wolfgang","last_name":"Stolz","full_name":"Stolz, Wolfgang"},{"first_name":"Christoph","last_name":"Lange","full_name":"Lange, Christoph"},{"first_name":"N. S.","full_name":"Koester, N. S.","last_name":"Koester"},{"first_name":"Daniel J.","full_name":"Franzbach, Daniel J.","last_name":"Franzbach"},{"full_name":"Chatterjee, Sati Nath","last_name":"Chatterjee","first_name":"Sati Nath"},{"last_name":"Rühle","full_name":"Rühle, Wolfgang W.","first_name":"Wolfgang W."}],"date_updated":"2026-02-20T10:39:16Z","status":"public","type":"journal_article","publication":"Papers presented at the 35th International Symposium on Compound Semiconductors (ISCS 2008), Rust, Germany, 21 - 24 September 2008","language":[{"iso":"eng"}],"user_id":"15911","department":[{"_id":"977"}],"_id":"64520"}