---
res:
  bibo_abstract:
  - <jats:p>Local droplet etching and subsequent refilling enables the fabrication
    of highly symmetric quantum dots with low fine structure splitting, suitable for
    generating polarization entangled photons. While well established in GaAs/AlxGa1−xAs,
    this approach does not yield emission in the telecom bands required for low loss
    fiber-based quantum communication. To achieve emission at 1.55 μm, local droplet
    etching must be adapted to alternative material platforms such as InP. Here, we
    systematically investigate how the etching material deposition rate and etching
    time influence nanohole morphology in In0.52Al0.48As layers lattice-matched to
    InP. In the first experiment, InAl was deposited at fluxes of 0.2–4.0 Å s−1 at
    Tetch = 350 °C and 460 °C. Lower fluxes produced nanoholes with lower density
    and larger ring diameters, indicating fewer and larger initial droplets, consistent
    with scaling theory. The average nanohole diameter decreased monotonically with
    increasing flux, whereas the average depth showed no clear dependence on flux.
    In the second experiment, etching times of 30–600 s were tested for InAl, In,
    and Al droplets. Average nanohole diameters remained constant for Al across all
    etching times, but decreased for In and InAl with increasing etching time, suggesting
    sidewall redeposition during etching. For all droplet types, depths peaked at
    intermediate times and decreased for prolonged etching, consistent with material
    diffusion into the nanohole after droplet consumption.</jats:p>@eng
  bibo_authorlist:
  - foaf_Person:
      foaf_givenName: Dennis
      foaf_name: Deutsch, Dennis
      foaf_surname: Deutsch
      foaf_workInfoHomepage: http://www.librecat.org/personId=23489
  - foaf_Person:
      foaf_givenName: Dirk
      foaf_name: Reuter, Dirk
      foaf_surname: Reuter
      foaf_workInfoHomepage: http://www.librecat.org/personId=37763
  bibo_doi: 10.3390/cryst15110913
  bibo_issue: '11'
  bibo_volume: 15
  dct_date: 2025^xs_gYear
  dct_isPartOf:
  - http://id.crossref.org/issn/2073-4352
  dct_language: eng
  dct_publisher: MDPI AG@
  dct_title: Influence of the Etching Material Deposition Rate and Annealing Time
    on Nanohole Morphology Etched into InP/In0.52Al0.48As Layers via Local Droplet
    Epitaxy@
...