---
res:
  bibo_abstract:
  - "<jats:p>\r\n                    This work investigates the temperature dependence
    of the lattice constant\r\n                    <jats:italic>a</jats:italic>\r\n
    \                   <jats:sub>exp</jats:sub>\r\n                    of cubic GaN/3C‐SiC/Si
    (001) epilayers grown at 740°C by plasma‐assisted molecular beam epitaxy is investigated.
    High resolution X‐ray diffraction is performed to determine the lattice constant,
    using an Anton–Paar DHS1100 stage to vary the sample temperature from 25°C to
    900°C, calibrated against the underlying single‐crystalline silicon substrate.
    A linear increase in\r\n                    <jats:italic>a</jats:italic>\r\n                    <jats:sub>exp</jats:sub>\r\n
    \                   with rising temperature is observed. The thermal expansion
    behaviour is modelled using Debye´s phonon dispersion. The fitted lattice parameters
    are used to calculate the thermal expansion coefficient (TEC). At room temperature
    the TEC is determined to be\r\n                    <jats:italic>α</jats:italic>\r\n
    \                   <jats:sub>Debye </jats:sub>\r\n                    ≈ 5.25
    × 10\r\n                    <jats:sup>−6</jats:sup>\r\n                     K\r\n
    \                   <jats:sup>−1</jats:sup>\r\n                    . We further
    compare the TEC of the cubic GaN epilayer to that of free‐standing hexagonal GaN
    using the crystallographic relationship of , demonstrating good agreement between
    both phases. Using literature values for the elastic constants of cubic GaN, the
    corresponding elastic moduli and Debye temperature Θ\r\n                    <jats:sub>D</jats:sub>\r\n
    \                   are calculated. An average value of Θ\r\n                    <jats:sub>D</jats:sub>\r\n
    \                   of ≈905 ± 25 K is obtained, which is very close to our experimental
    results. Moreover, tensile strain is found to be present in our sample at room
    temperature, leading to an increase in the TEC. The impact of strain on the thermal
    properties of cubic GaN is discussed.\r\n                  </jats:p>@eng"
  bibo_authorlist:
  - foaf_Person:
      foaf_givenName: Donat Josef
      foaf_name: As, Donat Josef
      foaf_surname: As
      foaf_workInfoHomepage: http://www.librecat.org/personId=14
    orcid: 0000-0003-1121-3565
  - foaf_Person:
      foaf_givenName: Falco
      foaf_name: Meier, Falco
      foaf_surname: Meier
  - foaf_Person:
      foaf_givenName: Pascal
      foaf_name: Mahler, Pascal
      foaf_surname: Mahler
  - foaf_Person:
      foaf_givenName: Cedrik
      foaf_name: Meier, Cedrik
      foaf_surname: Meier
      foaf_workInfoHomepage: http://www.librecat.org/personId=20798
    orcid: https://orcid.org/0000-0002-3787-3572
  bibo_doi: 10.1002/pssb.202500477
  bibo_issue: '2'
  bibo_volume: 263
  dct_date: 2026^xs_gYear
  dct_isPartOf:
  - http://id.crossref.org/issn/0370-1972
  - http://id.crossref.org/issn/1521-3951
  dct_language: eng
  dct_publisher: Wiley@
  dct_title: X‐Ray Investigation of the Thermal Expansion Coefficient of Cubic Gallium
    Nitride on 3C‐SiC (001)/Si (001) Substrates@
...