---
_id: '65741'
abstract:
- lang: eng
  text: "<jats:p>\r\n                    This work investigates the temperature dependence
    of the lattice constant\r\n                    <jats:italic>a</jats:italic>\r\n
    \                   <jats:sub>exp</jats:sub>\r\n                    of cubic GaN/3C‐SiC/Si
    (001) epilayers grown at 740°C by plasma‐assisted molecular beam epitaxy is investigated.
    High resolution X‐ray diffraction is performed to determine the lattice constant,
    using an Anton–Paar DHS1100 stage to vary the sample temperature from 25°C to
    900°C, calibrated against the underlying single‐crystalline silicon substrate.
    A linear increase in\r\n                    <jats:italic>a</jats:italic>\r\n                    <jats:sub>exp</jats:sub>\r\n
    \                   with rising temperature is observed. The thermal expansion
    behaviour is modelled using Debye´s phonon dispersion. The fitted lattice parameters
    are used to calculate the thermal expansion coefficient (TEC). At room temperature
    the TEC is determined to be\r\n                    <jats:italic>α</jats:italic>\r\n
    \                   <jats:sub>Debye </jats:sub>\r\n                    ≈ 5.25
    × 10\r\n                    <jats:sup>−6</jats:sup>\r\n                     K\r\n
    \                   <jats:sup>−1</jats:sup>\r\n                    . We further
    compare the TEC of the cubic GaN epilayer to that of free‐standing hexagonal GaN
    using the crystallographic relationship of , demonstrating good agreement between
    both phases. Using literature values for the elastic constants of cubic GaN, the
    corresponding elastic moduli and Debye temperature Θ\r\n                    <jats:sub>D</jats:sub>\r\n
    \                   are calculated. An average value of Θ\r\n                    <jats:sub>D</jats:sub>\r\n
    \                   of ≈905 ± 25 K is obtained, which is very close to our experimental
    results. Moreover, tensile strain is found to be present in our sample at room
    temperature, leading to an increase in the TEC. The impact of strain on the thermal
    properties of cubic GaN is discussed.\r\n                  </jats:p>"
article_number: e202500477
article_type: original
author:
- first_name: Donat Josef
  full_name: As, Donat Josef
  id: '14'
  last_name: As
  orcid: 0000-0003-1121-3565
- first_name: Falco
  full_name: Meier, Falco
  last_name: Meier
- first_name: Pascal
  full_name: Mahler, Pascal
  last_name: Mahler
- first_name: Cedrik
  full_name: Meier, Cedrik
  id: '20798'
  last_name: Meier
  orcid: https://orcid.org/0000-0002-3787-3572
citation:
  ama: As DJ, Meier F, Mahler P, Meier C. X‐Ray Investigation of the Thermal Expansion
    Coefficient of Cubic Gallium Nitride on 3C‐SiC (001)/Si (001) Substrates. <i>physica
    status solidi (b)</i>. 2026;263(2). doi:<a href="https://doi.org/10.1002/pssb.202500477">10.1002/pssb.202500477</a>
  apa: As, D. J., Meier, F., Mahler, P., &#38; Meier, C. (2026). X‐Ray Investigation
    of the Thermal Expansion Coefficient of Cubic Gallium Nitride on 3C‐SiC (001)/Si
    (001) Substrates. <i>Physica Status Solidi (b)</i>, <i>263</i>(2), Article e202500477.
    <a href="https://doi.org/10.1002/pssb.202500477">https://doi.org/10.1002/pssb.202500477</a>
  bibtex: '@article{As_Meier_Mahler_Meier_2026, title={X‐Ray Investigation of the
    Thermal Expansion Coefficient of Cubic Gallium Nitride on 3C‐SiC (001)/Si (001)
    Substrates}, volume={263}, DOI={<a href="https://doi.org/10.1002/pssb.202500477">10.1002/pssb.202500477</a>},
    number={2e202500477}, journal={physica status solidi (b)}, publisher={Wiley},
    author={As, Donat Josef and Meier, Falco and Mahler, Pascal and Meier, Cedrik},
    year={2026} }'
  chicago: As, Donat Josef, Falco Meier, Pascal Mahler, and Cedrik Meier. “X‐Ray Investigation
    of the Thermal Expansion Coefficient of Cubic Gallium Nitride on 3C‐SiC (001)/Si
    (001) Substrates.” <i>Physica Status Solidi (b)</i> 263, no. 2 (2026). <a href="https://doi.org/10.1002/pssb.202500477">https://doi.org/10.1002/pssb.202500477</a>.
  ieee: 'D. J. As, F. Meier, P. Mahler, and C. Meier, “X‐Ray Investigation of the
    Thermal Expansion Coefficient of Cubic Gallium Nitride on 3C‐SiC (001)/Si (001)
    Substrates,” <i>physica status solidi (b)</i>, vol. 263, no. 2, Art. no. e202500477,
    2026, doi: <a href="https://doi.org/10.1002/pssb.202500477">10.1002/pssb.202500477</a>.'
  mla: As, Donat Josef, et al. “X‐Ray Investigation of the Thermal Expansion Coefficient
    of Cubic Gallium Nitride on 3C‐SiC (001)/Si (001) Substrates.” <i>Physica Status
    Solidi (b)</i>, vol. 263, no. 2, e202500477, Wiley, 2026, doi:<a href="https://doi.org/10.1002/pssb.202500477">10.1002/pssb.202500477</a>.
  short: D.J. As, F. Meier, P. Mahler, C. Meier, Physica Status Solidi (b) 263 (2026).
date_created: 2026-06-01T09:22:04Z
date_updated: 2026-06-01T09:23:41Z
department:
- _id: '15'
doi: 10.1002/pssb.202500477
intvolume: '       263'
issue: '2'
language:
- iso: eng
publication: physica status solidi (b)
publication_identifier:
  issn:
  - 0370-1972
  - 1521-3951
publication_status: published
publisher: Wiley
status: public
title: X‐Ray Investigation of the Thermal Expansion Coefficient of Cubic Gallium Nitride
  on 3C‐SiC (001)/Si (001) Substrates
type: journal_article
user_id: '20798'
volume: 263
year: '2026'
...