conference paper published Wei-Chun Cheng author Shuo-Han Chen author Yuan-Hao Chang author Kuan-Hsun Chen author Jian-Jia Chen author Tseng-Yi Chen author Ming-Chang Yang author Wei-Kuan Shih author IEEE2020 10.1109/nvmsa51238.2020.9188172 W.-C. Cheng <i>et al.</i>, “NS-FTL: Alleviating the Uneven Bit-Level Wearing of NVRAM-based FTL via NAND-SPIN,” 2020, doi: <a href="https://doi.org/10.1109/nvmsa51238.2020.9188172">10.1109/nvmsa51238.2020.9188172</a>. Cheng, W.-C., Chen, S.-H., Chang, Y.-H., Chen, K.-H., Chen, J.-J., Chen, T.-Y., Yang, M.-C., &#38; Shih, W.-K. (2020). NS-FTL: Alleviating the Uneven Bit-Level Wearing of NVRAM-based FTL via NAND-SPIN. <i>2020 9th Non-Volatile Memory Systems and Applications Symposium (NVMSA)</i>. <a href="https://doi.org/10.1109/nvmsa51238.2020.9188172">https://doi.org/10.1109/nvmsa51238.2020.9188172</a> W.-C. Cheng, S.-H. Chen, Y.-H. Chang, K.-H. Chen, J.-J. Chen, T.-Y. Chen, M.-C. Yang, W.-K. Shih, in: 2020 9th Non-Volatile Memory Systems and Applications Symposium (NVMSA), IEEE, 2020. Cheng, Wei-Chun, Shuo-Han Chen, Yuan-Hao Chang, Kuan-Hsun Chen, Jian-Jia Chen, Tseng-Yi Chen, Ming-Chang Yang, and Wei-Kuan Shih. “NS-FTL: Alleviating the Uneven Bit-Level Wearing of NVRAM-Based FTL via NAND-SPIN.” In <i>2020 9th Non-Volatile Memory Systems and Applications Symposium (NVMSA)</i>. IEEE, 2020. <a href="https://doi.org/10.1109/nvmsa51238.2020.9188172">https://doi.org/10.1109/nvmsa51238.2020.9188172</a>. Cheng, Wei-Chun, et al. “NS-FTL: Alleviating the Uneven Bit-Level Wearing of NVRAM-Based FTL via NAND-SPIN.” <i>2020 9th Non-Volatile Memory Systems and Applications Symposium (NVMSA)</i>, IEEE, 2020, doi:<a href="https://doi.org/10.1109/nvmsa51238.2020.9188172">10.1109/nvmsa51238.2020.9188172</a>. @inproceedings{Cheng_Chen_Chang_Chen_Chen_Chen_Yang_Shih_2020, title={NS-FTL: Alleviating the Uneven Bit-Level Wearing of NVRAM-based FTL via NAND-SPIN}, DOI={<a href="https://doi.org/10.1109/nvmsa51238.2020.9188172">10.1109/nvmsa51238.2020.9188172</a>}, booktitle={2020 9th Non-Volatile Memory Systems and Applications Symposium (NVMSA)}, publisher={IEEE}, author={Cheng, Wei-Chun and Chen, Shuo-Han and Chang, Yuan-Hao and Chen, Kuan-Hsun and Chen, Jian-Jia and Chen, Tseng-Yi and Yang, Ming-Chang and Shih, Wei-Kuan}, year={2020} } Cheng W-C, Chen S-H, Chang Y-H, et al. NS-FTL: Alleviating the Uneven Bit-Level Wearing of NVRAM-based FTL via NAND-SPIN. In: <i>2020 9th Non-Volatile Memory Systems and Applications Symposium (NVMSA)</i>. IEEE; 2020. doi:<a href="https://doi.org/10.1109/nvmsa51238.2020.9188172">10.1109/nvmsa51238.2020.9188172</a> 662352026-07-03T21:24:49Z2026-07-05T14:44:49Z