---
_id: '66235'
author:
- first_name: Wei-Chun
  full_name: Cheng, Wei-Chun
  last_name: Cheng
- first_name: Shuo-Han
  full_name: Chen, Shuo-Han
  last_name: Chen
- first_name: Yuan-Hao
  full_name: Chang, Yuan-Hao
  last_name: Chang
- first_name: Kuan-Hsun
  full_name: Chen, Kuan-Hsun
  last_name: Chen
- first_name: Jian-Jia
  full_name: Chen, Jian-Jia
  last_name: Chen
- first_name: Tseng-Yi
  full_name: Chen, Tseng-Yi
  last_name: Chen
- first_name: Ming-Chang
  full_name: Yang, Ming-Chang
  last_name: Yang
- first_name: Wei-Kuan
  full_name: Shih, Wei-Kuan
  last_name: Shih
citation:
  ama: 'Cheng W-C, Chen S-H, Chang Y-H, et al. NS-FTL: Alleviating the Uneven Bit-Level
    Wearing of NVRAM-based FTL via NAND-SPIN. In: <i>2020 9th Non-Volatile Memory
    Systems and Applications Symposium (NVMSA)</i>. IEEE; 2020. doi:<a href="https://doi.org/10.1109/nvmsa51238.2020.9188172">10.1109/nvmsa51238.2020.9188172</a>'
  apa: 'Cheng, W.-C., Chen, S.-H., Chang, Y.-H., Chen, K.-H., Chen, J.-J., Chen, T.-Y.,
    Yang, M.-C., &#38; Shih, W.-K. (2020). NS-FTL: Alleviating the Uneven Bit-Level
    Wearing of NVRAM-based FTL via NAND-SPIN. <i>2020 9th Non-Volatile Memory Systems
    and Applications Symposium (NVMSA)</i>. <a href="https://doi.org/10.1109/nvmsa51238.2020.9188172">https://doi.org/10.1109/nvmsa51238.2020.9188172</a>'
  bibtex: '@inproceedings{Cheng_Chen_Chang_Chen_Chen_Chen_Yang_Shih_2020, title={NS-FTL:
    Alleviating the Uneven Bit-Level Wearing of NVRAM-based FTL via NAND-SPIN}, DOI={<a
    href="https://doi.org/10.1109/nvmsa51238.2020.9188172">10.1109/nvmsa51238.2020.9188172</a>},
    booktitle={2020 9th Non-Volatile Memory Systems and Applications Symposium (NVMSA)},
    publisher={IEEE}, author={Cheng, Wei-Chun and Chen, Shuo-Han and Chang, Yuan-Hao
    and Chen, Kuan-Hsun and Chen, Jian-Jia and Chen, Tseng-Yi and Yang, Ming-Chang
    and Shih, Wei-Kuan}, year={2020} }'
  chicago: 'Cheng, Wei-Chun, Shuo-Han Chen, Yuan-Hao Chang, Kuan-Hsun Chen, Jian-Jia
    Chen, Tseng-Yi Chen, Ming-Chang Yang, and Wei-Kuan Shih. “NS-FTL: Alleviating
    the Uneven Bit-Level Wearing of NVRAM-Based FTL via NAND-SPIN.” In <i>2020 9th
    Non-Volatile Memory Systems and Applications Symposium (NVMSA)</i>. IEEE, 2020.
    <a href="https://doi.org/10.1109/nvmsa51238.2020.9188172">https://doi.org/10.1109/nvmsa51238.2020.9188172</a>.'
  ieee: 'W.-C. Cheng <i>et al.</i>, “NS-FTL: Alleviating the Uneven Bit-Level Wearing
    of NVRAM-based FTL via NAND-SPIN,” 2020, doi: <a href="https://doi.org/10.1109/nvmsa51238.2020.9188172">10.1109/nvmsa51238.2020.9188172</a>.'
  mla: 'Cheng, Wei-Chun, et al. “NS-FTL: Alleviating the Uneven Bit-Level Wearing
    of NVRAM-Based FTL via NAND-SPIN.” <i>2020 9th Non-Volatile Memory Systems and
    Applications Symposium (NVMSA)</i>, IEEE, 2020, doi:<a href="https://doi.org/10.1109/nvmsa51238.2020.9188172">10.1109/nvmsa51238.2020.9188172</a>.'
  short: 'W.-C. Cheng, S.-H. Chen, Y.-H. Chang, K.-H. Chen, J.-J. Chen, T.-Y. Chen,
    M.-C. Yang, W.-K. Shih, in: 2020 9th Non-Volatile Memory Systems and Applications
    Symposium (NVMSA), IEEE, 2020.'
date_created: 2026-07-03T21:24:49Z
date_updated: 2026-07-05T14:44:49Z
doi: 10.1109/nvmsa51238.2020.9188172
publication: 2020 9th Non-Volatile Memory Systems and Applications Symposium (NVMSA)
publication_status: published
publisher: IEEE
status: public
title: 'NS-FTL: Alleviating the Uneven Bit-Level Wearing of NVRAM-based FTL via NAND-SPIN'
type: conference
user_id: '128464'
year: '2020'
...