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   	<dc:title>Hybrid GaAs (111)/GaAs (100) PIN photodiodes for metasurface-assisted nonlinear upconversion detection</dc:title>
   	<dc:creator>Spedt, Vladimir</dc:creator>
   	<dc:creator>Meier, Falco</dc:creator>
   	<dc:creator>Geromel, René</dc:creator>
   	<dc:creator>Mahler, Pascal</dc:creator>
   	<dc:creator>Henksmeier, Tobias</dc:creator>
   	<dc:creator>Reuter, Dirk</dc:creator>
   	<dc:creator>Zentgraf, Thomas</dc:creator>
   	<dc:creator>Meier, Cedrik</dc:creator>
   	<dc:subject>ddc:530</dc:subject>
   	<dc:description>&lt;jats:p&gt;Efficient detection of near-infrared light at telecommunication wavelengths remains a central challenge for GaAs-based photonic and optoelectronic devices due to the absence of linear absorption below the bandgap. Here, we demonstrate a hybrid nonlinear optoelectronic device that enhances the detection efficiency of a (001)-oriented GaAs PIN photodiode under telecommunication-wavelength illumination, where absorption is intrinsically limited to two-photon absorption (2PA). Our approach relies on the integration of a transferred, nanopatterned 385 nm-thick (111)-oriented GaAs nanofilm acting as an on-chip nonlinear frequency-conversion layer. Elliptical GaAs nanoresonators are employed to enhance second-harmonic generation (SHG) resonantly, converting incident 1550 nm radiation into above-bandgap photons efficiently absorbed by the underlying diode. Spatially resolved current–voltage measurements reveal a pronounced enhancement of the detector response in regions covered by the nanoantennas. The device exhibits a low dark current, while the metasurface-covered regions show the largest current response under 1560 nm excitation compared to the bare GaAs(100) diode and the unstructured GaAs(111) film. These results establish a direct functional link between dielectric metasurface–based nonlinear frequency conversion and electrical photodetection, providing a viable route toward integrated sub-bandgap detection schemes.&lt;/jats:p&gt;</dc:description>
   	<dc:publisher>Optica Publishing Group</dc:publisher>
   	<dc:date>2026</dc:date>
   	<dc:type>info:eu-repo/semantics/article</dc:type>
   	<dc:type>doc-type:article</dc:type>
   	<dc:type>text</dc:type>
   	<dc:type>http://purl.org/coar/resource_type/c_6501</dc:type>
   	<dc:identifier>https://ris.uni-paderborn.de/record/66674</dc:identifier>
   	<dc:source>Spedt V, Meier F, Geromel R, et al. Hybrid GaAs (111)/GaAs (100) PIN photodiodes for metasurface-assisted nonlinear upconversion detection. &lt;i&gt;Optics Express&lt;/i&gt;. 2026;34(16). doi:&lt;a href=&quot;https://doi.org/10.1364/oe.601288&quot;&gt;10.1364/oe.601288&lt;/a&gt;</dc:source>
   	<dc:language>eng</dc:language>
   	<dc:relation>info:eu-repo/semantics/altIdentifier/doi/10.1364/oe.601288</dc:relation>
   	<dc:relation>info:eu-repo/semantics/altIdentifier/issn/1094-4087</dc:relation>
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