{"user_id":"20798","ddc":["530"],"volume":34,"publisher":"Optica Publishing Group","_id":"66674","has_accepted_license":"1","status":"public","quality_controlled":"1","project":[{"_id":"55","name":"TRR 142 - Project Area B"},{"_id":"170","name":"TRR 142; TP B09: Effiziente Erzeugung mit maßgeschneiderter optischer Phaselage der zweiten Harmonischen mittels Quasi-gebundener Zustände in GaAs Metaoberflächen"}],"file_date_updated":"2026-08-06T12:18:22Z","citation":{"bibtex":"@article{Spedt_Meier_Geromel_Mahler_Henksmeier_Reuter_Zentgraf_Meier_2026, title={Hybrid GaAs (111)/GaAs (100) PIN photodiodes for metasurface-assisted nonlinear upconversion detection}, volume={34}, DOI={10.1364/oe.601288}, number={1630335}, journal={Optics Express}, publisher={Optica Publishing Group}, author={Spedt, Vladimir and Meier, Falco and Geromel, René and Mahler, Pascal and Henksmeier, Tobias and Reuter, Dirk and Zentgraf, Thomas and Meier, Cedrik}, year={2026} }","ama":"Spedt V, Meier F, Geromel R, et al. Hybrid GaAs (111)/GaAs (100) PIN photodiodes for metasurface-assisted nonlinear upconversion detection. Optics Express. 2026;34(16). doi:10.1364/oe.601288","mla":"Spedt, Vladimir, et al. “Hybrid GaAs (111)/GaAs (100) PIN Photodiodes for Metasurface-Assisted Nonlinear Upconversion Detection.” Optics Express, vol. 34, no. 16, 30335, Optica Publishing Group, 2026, doi:10.1364/oe.601288.","chicago":"Spedt, Vladimir, Falco Meier, René Geromel, Pascal Mahler, Tobias Henksmeier, Dirk Reuter, Thomas Zentgraf, and Cedrik Meier. “Hybrid GaAs (111)/GaAs (100) PIN Photodiodes for Metasurface-Assisted Nonlinear Upconversion Detection.” Optics Express 34, no. 16 (2026). https://doi.org/10.1364/oe.601288.","short":"V. Spedt, F. Meier, R. Geromel, P. Mahler, T. Henksmeier, D. Reuter, T. Zentgraf, C. Meier, Optics Express 34 (2026).","ieee":"V. Spedt et al., “Hybrid GaAs (111)/GaAs (100) PIN photodiodes for metasurface-assisted nonlinear upconversion detection,” Optics Express, vol. 34, no. 16, Art. no. 30335, 2026, doi: 10.1364/oe.601288.","apa":"Spedt, V., Meier, F., Geromel, R., Mahler, P., Henksmeier, T., Reuter, D., Zentgraf, T., & Meier, C. (2026). Hybrid GaAs (111)/GaAs (100) PIN photodiodes for metasurface-assisted nonlinear upconversion detection. Optics Express, 34(16), Article 30335. https://doi.org/10.1364/oe.601288"},"doi":"10.1364/oe.601288","article_number":"30335","language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2026-08-06T12:18:58Z","article_type":"original","intvolume":" 34","year":"2026","title":"Hybrid GaAs (111)/GaAs (100) PIN photodiodes for metasurface-assisted nonlinear upconversion detection","author":[{"first_name":"Vladimir","last_name":"Spedt","full_name":"Spedt, Vladimir"},{"first_name":"Falco","last_name":"Meier","full_name":"Meier, Falco"},{"first_name":"René","last_name":"Geromel","full_name":"Geromel, René"},{"full_name":"Mahler, Pascal","last_name":"Mahler","first_name":"Pascal"},{"full_name":"Henksmeier, Tobias","first_name":"Tobias","last_name":"Henksmeier","id":"42539"},{"id":"37763","first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk"},{"last_name":"Zentgraf","orcid":"0000-0002-8662-1101","first_name":"Thomas","full_name":"Zentgraf, Thomas","id":"30525"},{"id":"20798","full_name":"Meier, Cedrik","last_name":"Meier","first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572"}],"publication_identifier":{"issn":["1094-4087"]},"type":"journal_article","department":[{"_id":"15"}],"file":[{"file_id":"66675","content_type":"application/pdf","success":1,"relation":"main_file","date_updated":"2026-08-06T12:18:22Z","file_name":"oe-34-16-30335.pdf","access_level":"closed","file_size":2894783,"date_created":"2026-08-06T12:18:22Z","creator":"cedrikm"}],"date_created":"2026-08-06T12:15:59Z","abstract":[{"text":"Efficient detection of near-infrared light at telecommunication wavelengths remains a central challenge for GaAs-based photonic and optoelectronic devices due to the absence of linear absorption below the bandgap. Here, we demonstrate a hybrid nonlinear optoelectronic device that enhances the detection efficiency of a (001)-oriented GaAs PIN photodiode under telecommunication-wavelength illumination, where absorption is intrinsically limited to two-photon absorption (2PA). Our approach relies on the integration of a transferred, nanopatterned 385 nm-thick (111)-oriented GaAs nanofilm acting as an on-chip nonlinear frequency-conversion layer. Elliptical GaAs nanoresonators are employed to enhance second-harmonic generation (SHG) resonantly, converting incident 1550 nm radiation into above-bandgap photons efficiently absorbed by the underlying diode. Spatially resolved current–voltage measurements reveal a pronounced enhancement of the detector response in regions covered by the nanoantennas. The device exhibits a low dark current, while the metasurface-covered regions show the largest current response under 1560 nm excitation compared to the bare GaAs(100) diode and the unstructured GaAs(111) film. These results establish a direct functional link between dielectric metasurface–based nonlinear frequency conversion and electrical photodetection, providing a viable route toward integrated sub-bandgap detection schemes.","lang":"eng"}],"publication":"Optics Express","issue":"16"}