{"department":[{"_id":"15"},{"_id":"230"}],"doi":"10.1088/1361-6641/aad83d","publication_status":"published","volume":33,"issue":"9","author":[{"first_name":"J","last_name":"Schuster","full_name":"Schuster, J"},{"last_name":"Kim","first_name":"T Y","full_name":"Kim, T Y"},{"full_name":"Batke, E","last_name":"Batke","first_name":"E"},{"id":"37763","last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk"},{"full_name":"Wieck, A D","last_name":"Wieck","first_name":"A D"}],"status":"public","intvolume":"        33","type":"journal_article","user_id":"42514","date_updated":"2022-01-06T07:03:26Z","title":"Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures","publication_identifier":{"issn":["0268-1242","1361-6641"]},"language":[{"iso":"eng"}],"citation":{"bibtex":"@article{Schuster_Kim_Batke_Reuter_Wieck_2018, title={Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures}, volume={33}, DOI={<a href=\"https://doi.org/10.1088/1361-6641/aad83d\">10.1088/1361-6641/aad83d</a>}, number={9095020}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and Wieck, A D}, year={2018} }","ieee":"J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures,” <i>Semiconductor Science and Technology</i>, vol. 33, no. 9, 2018.","short":"J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 33 (2018).","chicago":"Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Interlayer Charge Transfer in N-Modulation Doped Al1−x Ga x As–GaAs Single Heterostructures.” <i>Semiconductor Science and Technology</i> 33, no. 9 (2018). <a href=\"https://doi.org/10.1088/1361-6641/aad83d\">https://doi.org/10.1088/1361-6641/aad83d</a>.","mla":"Schuster, J., et al. “Interlayer Charge Transfer in N-Modulation Doped Al1−x Ga x As–GaAs Single Heterostructures.” <i>Semiconductor Science and Technology</i>, vol. 33, no. 9, 095020, IOP Publishing, 2018, doi:<a href=\"https://doi.org/10.1088/1361-6641/aad83d\">10.1088/1361-6641/aad83d</a>.","ama":"Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures. <i>Semiconductor Science and Technology</i>. 2018;33(9). doi:<a href=\"https://doi.org/10.1088/1361-6641/aad83d\">10.1088/1361-6641/aad83d</a>","apa":"Schuster, J., Kim, T. Y., Batke, E., Reuter, D., &#38; Wieck, A. D. (2018). Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures. <i>Semiconductor Science and Technology</i>, <i>33</i>(9). <a href=\"https://doi.org/10.1088/1361-6641/aad83d\">https://doi.org/10.1088/1361-6641/aad83d</a>"},"year":"2018","_id":"7009","publication":"Semiconductor Science and Technology","publisher":"IOP Publishing","article_number":"095020","date_created":"2019-01-28T08:18:34Z"}