{"citation":{"ama":"Ritzmann J, Schott R, Gross K, Reuter D, Ludwig A, Wieck AD. Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy. <i>Journal of Crystal Growth</i>. 2017;481:7-10. doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2017.10.029\">10.1016/j.jcrysgro.2017.10.029</a>","apa":"Ritzmann, J., Schott, R., Gross, K., Reuter, D., Ludwig, A., &#38; Wieck, A. D. (2017). Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy. <i>Journal of Crystal Growth</i>, <i>481</i>, 7–10. <a href=\"https://doi.org/10.1016/j.jcrysgro.2017.10.029\">https://doi.org/10.1016/j.jcrysgro.2017.10.029</a>","chicago":"Ritzmann, Julian, Rüdiger Schott, Katherine Gross, Dirk Reuter, Arne Ludwig, and Andreas D. Wieck. “Overcoming Ehrlich-Schwöbel Barrier in (1 1 1)A GaAs Molecular Beam Epitaxy.” <i>Journal of Crystal Growth</i> 481 (2017): 7–10. <a href=\"https://doi.org/10.1016/j.jcrysgro.2017.10.029\">https://doi.org/10.1016/j.jcrysgro.2017.10.029</a>.","mla":"Ritzmann, Julian, et al. “Overcoming Ehrlich-Schwöbel Barrier in (1 1 1)A GaAs Molecular Beam Epitaxy.” <i>Journal of Crystal Growth</i>, vol. 481, Elsevier BV, 2017, pp. 7–10, doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2017.10.029\">10.1016/j.jcrysgro.2017.10.029</a>.","bibtex":"@article{Ritzmann_Schott_Gross_Reuter_Ludwig_Wieck_2017, title={Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy}, volume={481}, DOI={<a href=\"https://doi.org/10.1016/j.jcrysgro.2017.10.029\">10.1016/j.jcrysgro.2017.10.029</a>}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Ritzmann, Julian and Schott, Rüdiger and Gross, Katherine and Reuter, Dirk and Ludwig, Arne and Wieck, Andreas D.}, year={2017}, pages={7–10} }","ieee":"J. Ritzmann, R. Schott, K. Gross, D. Reuter, A. Ludwig, and A. D. Wieck, “Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy,” <i>Journal of Crystal Growth</i>, vol. 481, pp. 7–10, 2017.","short":"J. Ritzmann, R. Schott, K. Gross, D. Reuter, A. Ludwig, A.D. Wieck, Journal of Crystal Growth 481 (2017) 7–10."},"year":"2017","publication_identifier":{"issn":["0022-0248"]},"publication_status":"published","publisher":"Elsevier BV","intvolume":"       481","date_updated":"2022-01-06T07:03:26Z","page":"7-10","status":"public","volume":481,"language":[{"iso":"eng"}],"_id":"7020","doi":"10.1016/j.jcrysgro.2017.10.029","user_id":"42514","date_created":"2019-01-28T09:35:48Z","publication":"Journal of Crystal Growth","type":"journal_article","title":"Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy","author":[{"full_name":"Ritzmann, Julian","last_name":"Ritzmann","first_name":"Julian"},{"full_name":"Schott, Rüdiger","last_name":"Schott","first_name":"Rüdiger"},{"last_name":"Gross","full_name":"Gross, Katherine","first_name":"Katherine"},{"full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763","first_name":"Dirk"},{"full_name":"Ludwig, Arne","last_name":"Ludwig","first_name":"Arne"},{"full_name":"Wieck, Andreas D.","last_name":"Wieck","first_name":"Andreas D."}],"department":[{"_id":"15"},{"_id":"230"}]}