{"publication_status":"published","language":[{"iso":"eng"}],"page":"35-39","date_updated":"2022-01-06T07:03:26Z","type":"journal_article","publication":"Microelectronic Engineering","doi":"10.1016/j.mee.2017.05.053","author":[{"first_name":"Viktoryia","full_name":"Zolatanosha, Viktoryia","last_name":"Zolatanosha"},{"first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter"}],"publisher":"Elsevier BV","status":"public","intvolume":"       180","year":"2017","user_id":"42514","citation":{"bibtex":"@article{Zolatanosha_Reuter_2017, title={Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures}, volume={180}, DOI={<a href=\"https://doi.org/10.1016/j.mee.2017.05.053\">10.1016/j.mee.2017.05.053</a>}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Zolatanosha, Viktoryia and Reuter, Dirk}, year={2017}, pages={35–39} }","short":"V. Zolatanosha, D. Reuter, Microelectronic Engineering 180 (2017) 35–39.","chicago":"Zolatanosha, Viktoryia, and Dirk Reuter. “Robust Si 3 N 4 Masks for 100 Nm Selective Area Epitaxy of GaAs-Based Nanostructures.” <i>Microelectronic Engineering</i> 180 (2017): 35–39. <a href=\"https://doi.org/10.1016/j.mee.2017.05.053\">https://doi.org/10.1016/j.mee.2017.05.053</a>.","ieee":"V. Zolatanosha and D. Reuter, “Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures,” <i>Microelectronic Engineering</i>, vol. 180, pp. 35–39, 2017.","mla":"Zolatanosha, Viktoryia, and Dirk Reuter. “Robust Si 3 N 4 Masks for 100 Nm Selective Area Epitaxy of GaAs-Based Nanostructures.” <i>Microelectronic Engineering</i>, vol. 180, Elsevier BV, 2017, pp. 35–39, doi:<a href=\"https://doi.org/10.1016/j.mee.2017.05.053\">10.1016/j.mee.2017.05.053</a>.","ama":"Zolatanosha V, Reuter D. Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures. <i>Microelectronic Engineering</i>. 2017;180:35-39. doi:<a href=\"https://doi.org/10.1016/j.mee.2017.05.053\">10.1016/j.mee.2017.05.053</a>","apa":"Zolatanosha, V., &#38; Reuter, D. (2017). Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures. <i>Microelectronic Engineering</i>, <i>180</i>, 35–39. <a href=\"https://doi.org/10.1016/j.mee.2017.05.053\">https://doi.org/10.1016/j.mee.2017.05.053</a>"},"date_created":"2019-01-28T10:07:25Z","title":"Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures","_id":"7026","publication_identifier":{"issn":["0167-9317"]},"department":[{"_id":"15"},{"_id":"230"}],"volume":180}