{"publication_status":"published","issue":"5S","doi":"10.7567/jjap.55.05fg01","article_number":"05FG01","date_created":"2019-01-29T09:21:21Z","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:27Z","type":"journal_article","publication":"Japanese Journal of Applied Physics","year":"2016","status":"public","intvolume":"        55","publisher":"Japan Society of Applied Physics","author":[{"first_name":"Tobias","full_name":"Wecker, Tobias","last_name":"Wecker"},{"first_name":"Gordon","full_name":"Callsen, Gordon","last_name":"Callsen"},{"first_name":"Axel","last_name":"Hoffmann","full_name":"Hoffmann, Axel"},{"first_name":"Dirk","id":"37763","last_name":"Reuter","full_name":"Reuter, Dirk"},{"first_name":"Donat Josef","orcid":"0000-0003-1121-3565","full_name":"As, Donat Josef","last_name":"As","id":"14"}],"volume":55,"_id":"7055","title":"Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy","department":[{"_id":"15"},{"_id":"230"}],"publication_identifier":{"issn":["0021-4922","1347-4065"]},"user_id":"42514","citation":{"ieee":"T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, and D. J. As, “Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy,” <i>Japanese Journal of Applied Physics</i>, vol. 55, no. 5S, 2016.","ama":"Wecker T, Callsen G, Hoffmann A, Reuter D, As DJ. Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy. <i>Japanese Journal of Applied Physics</i>. 2016;55(5S). doi:<a href=\"https://doi.org/10.7567/jjap.55.05fg01\">10.7567/jjap.55.05fg01</a>","mla":"Wecker, Tobias, et al. “Photoluminescence Excitation Spectroscopy of Excited States of an Asymmetric Cubic GaN/Al0.25Ga0.75N Double Quantum Well Grown by Molecular Beam Epitaxy.” <i>Japanese Journal of Applied Physics</i>, vol. 55, no. 5S, 05FG01, Japan Society of Applied Physics, 2016, doi:<a href=\"https://doi.org/10.7567/jjap.55.05fg01\">10.7567/jjap.55.05fg01</a>.","apa":"Wecker, T., Callsen, G., Hoffmann, A., Reuter, D., &#38; As, D. J. (2016). Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy. <i>Japanese Journal of Applied Physics</i>, <i>55</i>(5S). <a href=\"https://doi.org/10.7567/jjap.55.05fg01\">https://doi.org/10.7567/jjap.55.05fg01</a>","bibtex":"@article{Wecker_Callsen_Hoffmann_Reuter_As_2016, title={Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy}, volume={55}, DOI={<a href=\"https://doi.org/10.7567/jjap.55.05fg01\">10.7567/jjap.55.05fg01</a>}, number={5S05FG01}, journal={Japanese Journal of Applied Physics}, publisher={Japan Society of Applied Physics}, author={Wecker, Tobias and Callsen, Gordon and Hoffmann, Axel and Reuter, Dirk and As, Donat Josef}, year={2016} }","short":"T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, D.J. As, Japanese Journal of Applied Physics 55 (2016).","chicago":"Wecker, Tobias, Gordon Callsen, Axel Hoffmann, Dirk Reuter, and Donat Josef As. “Photoluminescence Excitation Spectroscopy of Excited States of an Asymmetric Cubic GaN/Al0.25Ga0.75N Double Quantum Well Grown by Molecular Beam Epitaxy.” <i>Japanese Journal of Applied Physics</i> 55, no. 5S (2016). <a href=\"https://doi.org/10.7567/jjap.55.05fg01\">https://doi.org/10.7567/jjap.55.05fg01</a>."}}