---
_id: '7055'
article_number: 05FG01
author:
- first_name: Tobias
  full_name: Wecker, Tobias
  last_name: Wecker
- first_name: Gordon
  full_name: Callsen, Gordon
  last_name: Callsen
- first_name: Axel
  full_name: Hoffmann, Axel
  last_name: Hoffmann
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: Donat Josef
  full_name: As, Donat Josef
  id: '14'
  last_name: As
  orcid: 0000-0003-1121-3565
citation:
  ama: Wecker T, Callsen G, Hoffmann A, Reuter D, As DJ. Photoluminescence excitation
    spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N double
    quantum well grown by molecular beam epitaxy. <i>Japanese Journal of Applied Physics</i>.
    2016;55(5S). doi:<a href="https://doi.org/10.7567/jjap.55.05fg01">10.7567/jjap.55.05fg01</a>
  apa: Wecker, T., Callsen, G., Hoffmann, A., Reuter, D., &#38; As, D. J. (2016).
    Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic
    GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy. <i>Japanese
    Journal of Applied Physics</i>, <i>55</i>(5S). <a href="https://doi.org/10.7567/jjap.55.05fg01">https://doi.org/10.7567/jjap.55.05fg01</a>
  bibtex: '@article{Wecker_Callsen_Hoffmann_Reuter_As_2016, title={Photoluminescence
    excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N
    double quantum well grown by molecular beam epitaxy}, volume={55}, DOI={<a href="https://doi.org/10.7567/jjap.55.05fg01">10.7567/jjap.55.05fg01</a>},
    number={5S05FG01}, journal={Japanese Journal of Applied Physics}, publisher={Japan
    Society of Applied Physics}, author={Wecker, Tobias and Callsen, Gordon and Hoffmann,
    Axel and Reuter, Dirk and As, Donat Josef}, year={2016} }'
  chicago: Wecker, Tobias, Gordon Callsen, Axel Hoffmann, Dirk Reuter, and Donat Josef
    As. “Photoluminescence Excitation Spectroscopy of Excited States of an Asymmetric
    Cubic GaN/Al0.25Ga0.75N Double Quantum Well Grown by Molecular Beam Epitaxy.”
    <i>Japanese Journal of Applied Physics</i> 55, no. 5S (2016). <a href="https://doi.org/10.7567/jjap.55.05fg01">https://doi.org/10.7567/jjap.55.05fg01</a>.
  ieee: T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, and D. J. As, “Photoluminescence
    excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25Ga0.75N
    double quantum well grown by molecular beam epitaxy,” <i>Japanese Journal of Applied
    Physics</i>, vol. 55, no. 5S, 2016.
  mla: Wecker, Tobias, et al. “Photoluminescence Excitation Spectroscopy of Excited
    States of an Asymmetric Cubic GaN/Al0.25Ga0.75N Double Quantum Well Grown by Molecular
    Beam Epitaxy.” <i>Japanese Journal of Applied Physics</i>, vol. 55, no. 5S, 05FG01,
    Japan Society of Applied Physics, 2016, doi:<a href="https://doi.org/10.7567/jjap.55.05fg01">10.7567/jjap.55.05fg01</a>.
  short: T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, D.J. As, Japanese Journal
    of Applied Physics 55 (2016).
date_created: 2019-01-29T09:21:21Z
date_updated: 2022-01-06T07:03:27Z
department:
- _id: '15'
- _id: '230'
doi: 10.7567/jjap.55.05fg01
intvolume: '        55'
issue: 5S
language:
- iso: eng
publication: Japanese Journal of Applied Physics
publication_identifier:
  issn:
  - 0021-4922
  - 1347-4065
publication_status: published
publisher: Japan Society of Applied Physics
status: public
title: Photoluminescence excitation spectroscopy of excited states of an asymmetric
  cubic GaN/Al0.25Ga0.75N double quantum well grown by molecular beam epitaxy
type: journal_article
user_id: '42514'
volume: 55
year: '2016'
...