---
res:
  bibo_authorlist:
  - foaf_Person:
      foaf_givenName: D J
      foaf_name: Carrad, D J
      foaf_surname: Carrad
  - foaf_Person:
      foaf_givenName: A M
      foaf_name: Burke, A M
      foaf_surname: Burke
  - foaf_Person:
      foaf_givenName: P J
      foaf_name: Reece, P J
      foaf_surname: Reece
  - foaf_Person:
      foaf_givenName: R W
      foaf_name: Lyttleton, R W
      foaf_surname: Lyttleton
  - foaf_Person:
      foaf_givenName: D E J
      foaf_name: Waddington, D E J
      foaf_surname: Waddington
  - foaf_Person:
      foaf_givenName: A
      foaf_name: Rai, A
      foaf_surname: Rai
  - foaf_Person:
      foaf_givenName: Dirk
      foaf_name: Reuter, Dirk
      foaf_surname: Reuter
      foaf_workInfoHomepage: http://www.librecat.org/personId=37763
  - foaf_Person:
      foaf_givenName: A D
      foaf_name: Wieck, A D
      foaf_surname: Wieck
  - foaf_Person:
      foaf_givenName: A P
      foaf_name: Micolich, A P
      foaf_surname: Micolich
  bibo_doi: 10.1088/0953-8984/25/32/325304
  bibo_issue: '32'
  bibo_volume: 25
  dct_date: 2013^xs_gYear
  dct_isPartOf:
  - http://id.crossref.org/issn/0953-8984
  - http://id.crossref.org/issn/1361-648X
  dct_language: eng
  dct_publisher: IOP Publishing@
  dct_title: The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its
    use in AlGaAs/GaAs heterostructure devices@
...