{"department":[{"_id":"15"},{"_id":"230"}],"volume":25,"publisher":"IOP Publishing","type":"journal_article","citation":{"short":"D.J. Carrad, A.M. Burke, P.J. Reece, R.W. Lyttleton, D.E.J. Waddington, A. Rai, D. Reuter, A.D. Wieck, A.P. Micolich, Journal of Physics: Condensed Matter 25 (2013).","bibtex":"@article{Carrad_Burke_Reece_Lyttleton_Waddington_Rai_Reuter_Wieck_Micolich_2013, title={The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices}, volume={25}, DOI={<a href=\"https://doi.org/10.1088/0953-8984/25/32/325304\">10.1088/0953-8984/25/32/325304</a>}, number={32325304}, journal={Journal of Physics: Condensed Matter}, publisher={IOP Publishing}, author={Carrad, D J and Burke, A M and Reece, P J and Lyttleton, R W and Waddington, D E J and Rai, A and Reuter, Dirk and Wieck, A D and Micolich, A P}, year={2013} }","ieee":"D. J. Carrad <i>et al.</i>, “The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices,” <i>Journal of Physics: Condensed Matter</i>, vol. 25, no. 32, 2013.","ama":"Carrad DJ, Burke AM, Reece PJ, et al. The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices. <i>Journal of Physics: Condensed Matter</i>. 2013;25(32). doi:<a href=\"https://doi.org/10.1088/0953-8984/25/32/325304\">10.1088/0953-8984/25/32/325304</a>","mla":"Carrad, D. J., et al. “The Effect of (NH4)2Sxpassivation on the (311)A GaAs Surface and Its Use in AlGaAs/GaAs Heterostructure Devices.” <i>Journal of Physics: Condensed Matter</i>, vol. 25, no. 32, 325304, IOP Publishing, 2013, doi:<a href=\"https://doi.org/10.1088/0953-8984/25/32/325304\">10.1088/0953-8984/25/32/325304</a>.","chicago":"Carrad, D J, A M Burke, P J Reece, R W Lyttleton, D E J Waddington, A Rai, Dirk Reuter, A D Wieck, and A P Micolich. “The Effect of (NH4)2Sxpassivation on the (311)A GaAs Surface and Its Use in AlGaAs/GaAs Heterostructure Devices.” <i>Journal of Physics: Condensed Matter</i> 25, no. 32 (2013). <a href=\"https://doi.org/10.1088/0953-8984/25/32/325304\">https://doi.org/10.1088/0953-8984/25/32/325304</a>.","apa":"Carrad, D. J., Burke, A. M., Reece, P. J., Lyttleton, R. W., Waddington, D. E. J., Rai, A., … Micolich, A. P. (2013). The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices. <i>Journal of Physics: Condensed Matter</i>, <i>25</i>(32). <a href=\"https://doi.org/10.1088/0953-8984/25/32/325304\">https://doi.org/10.1088/0953-8984/25/32/325304</a>"},"article_number":"325304","author":[{"first_name":"D J","full_name":"Carrad, D J","last_name":"Carrad"},{"last_name":"Burke","full_name":"Burke, A M","first_name":"A M"},{"full_name":"Reece, P J","last_name":"Reece","first_name":"P J"},{"first_name":"R W","last_name":"Lyttleton","full_name":"Lyttleton, R W"},{"last_name":"Waddington","full_name":"Waddington, D E J","first_name":"D E J"},{"last_name":"Rai","full_name":"Rai, A","first_name":"A"},{"last_name":"Reuter","full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763"},{"last_name":"Wieck","full_name":"Wieck, A D","first_name":"A D"},{"last_name":"Micolich","full_name":"Micolich, A P","first_name":"A P"}],"year":"2013","user_id":"42514","publication_identifier":{"issn":["0953-8984","1361-648X"]},"date_created":"2019-01-30T12:57:16Z","doi":"10.1088/0953-8984/25/32/325304","publication_status":"published","_id":"7260","status":"public","publication":"Journal of Physics: Condensed Matter","title":"The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices","date_updated":"2022-01-06T07:03:31Z","language":[{"iso":"eng"}],"intvolume":"        25","issue":"32"}