article published D J Carrad author A M Burke author P J Reece author R W Lyttleton author D E J Waddington author A Rai author Dirk Reuter author 37763 A D Wieck author A P Micolich author 15 department 230 department IOP Publishing2013 eng 0953-8984 1361-648X10.1088/0953-8984/25/32/325304 2532 Carrad, D J, A M Burke, P J Reece, R W Lyttleton, D E J Waddington, A Rai, Dirk Reuter, A D Wieck, and A P Micolich. “The Effect of (NH4)2Sxpassivation on the (311)A GaAs Surface and Its Use in AlGaAs/GaAs Heterostructure Devices.” <i>Journal of Physics: Condensed Matter</i> 25, no. 32 (2013). <a href="https://doi.org/10.1088/0953-8984/25/32/325304">https://doi.org/10.1088/0953-8984/25/32/325304</a>. D. J. Carrad <i>et al.</i>, “The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices,” <i>Journal of Physics: Condensed Matter</i>, vol. 25, no. 32, 2013. Carrad DJ, Burke AM, Reece PJ, et al. The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices. <i>Journal of Physics: Condensed Matter</i>. 2013;25(32). doi:<a href="https://doi.org/10.1088/0953-8984/25/32/325304">10.1088/0953-8984/25/32/325304</a> @article{Carrad_Burke_Reece_Lyttleton_Waddington_Rai_Reuter_Wieck_Micolich_2013, title={The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices}, volume={25}, DOI={<a href="https://doi.org/10.1088/0953-8984/25/32/325304">10.1088/0953-8984/25/32/325304</a>}, number={32325304}, journal={Journal of Physics: Condensed Matter}, publisher={IOP Publishing}, author={Carrad, D J and Burke, A M and Reece, P J and Lyttleton, R W and Waddington, D E J and Rai, A and Reuter, Dirk and Wieck, A D and Micolich, A P}, year={2013} } Carrad, D. J., et al. “The Effect of (NH4)2Sxpassivation on the (311)A GaAs Surface and Its Use in AlGaAs/GaAs Heterostructure Devices.” <i>Journal of Physics: Condensed Matter</i>, vol. 25, no. 32, 325304, IOP Publishing, 2013, doi:<a href="https://doi.org/10.1088/0953-8984/25/32/325304">10.1088/0953-8984/25/32/325304</a>. D.J. Carrad, A.M. Burke, P.J. Reece, R.W. Lyttleton, D.E.J. Waddington, A. Rai, D. Reuter, A.D. Wieck, A.P. Micolich, Journal of Physics: Condensed Matter 25 (2013). Carrad, D. J., Burke, A. M., Reece, P. J., Lyttleton, R. W., Waddington, D. E. J., Rai, A., … Micolich, A. P. (2013). The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices. <i>Journal of Physics: Condensed Matter</i>, <i>25</i>(32). <a href="https://doi.org/10.1088/0953-8984/25/32/325304">https://doi.org/10.1088/0953-8984/25/32/325304</a> 72602019-01-30T12:57:16Z2022-01-06T07:03:31Z