{"author":[{"first_name":"J","last_name":"Schuster","full_name":"Schuster, J"},{"full_name":"Kim, T Y","last_name":"Kim","first_name":"T Y"},{"full_name":"Batke, E","last_name":"Batke","first_name":"E"},{"first_name":"Dirk","id":"37763","last_name":"Reuter","full_name":"Reuter, Dirk"},{"first_name":"A D","last_name":"Wieck","full_name":"Wieck, A D"}],"article_number":"085012","year":"2013","user_id":"42514","volume":28,"type":"journal_article","date_updated":"2022-01-06T07:03:31Z","_id":"7282","title":"Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures","language":[{"iso":"eng"}],"publisher":"IOP Publishing","doi":"10.1088/0268-1242/28/8/085012","date_created":"2019-01-31T08:01:35Z","status":"public","publication_status":"published","department":[{"_id":"15"},{"_id":"230"}],"publication_identifier":{"issn":["0268-1242","1361-6641"]},"citation":{"bibtex":"@article{Schuster_Kim_Batke_Reuter_Wieck_2013, title={Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures}, volume={28}, DOI={10.1088/0268-1242/28/8/085012}, number={8085012}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and Wieck, A D}, year={2013} }","mla":"Schuster, J., et al. “Influence of Recombination Center Interaction on the Photoluminescence of AlGaAs/GaAs Heterostructures.” Semiconductor Science and Technology, vol. 28, no. 8, 085012, IOP Publishing, 2013, doi:10.1088/0268-1242/28/8/085012.","ieee":"J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures,” Semiconductor Science and Technology, vol. 28, no. 8, 2013.","short":"J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 28 (2013).","apa":"Schuster, J., Kim, T. Y., Batke, E., Reuter, D., & Wieck, A. D. (2013). Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures. Semiconductor Science and Technology, 28(8). https://doi.org/10.1088/0268-1242/28/8/085012","chicago":"Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Influence of Recombination Center Interaction on the Photoluminescence of AlGaAs/GaAs Heterostructures.” Semiconductor Science and Technology 28, no. 8 (2013). https://doi.org/10.1088/0268-1242/28/8/085012.","ama":"Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures. Semiconductor Science and Technology. 2013;28(8). doi:10.1088/0268-1242/28/8/085012"},"publication":"Semiconductor Science and Technology","issue":"8","intvolume":" 28"}