[{"status":"public","issue":"8","type":"journal_article","date_created":"2019-01-31T08:01:35Z","citation":{"short":"J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 28 (2013).","ama":"Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures. <i>Semiconductor Science and Technology</i>. 2013;28(8). doi:<a href=\"https://doi.org/10.1088/0268-1242/28/8/085012\">10.1088/0268-1242/28/8/085012</a>","apa":"Schuster, J., Kim, T. Y., Batke, E., Reuter, D., &#38; Wieck, A. D. (2013). Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures. <i>Semiconductor Science and Technology</i>, <i>28</i>(8). <a href=\"https://doi.org/10.1088/0268-1242/28/8/085012\">https://doi.org/10.1088/0268-1242/28/8/085012</a>","mla":"Schuster, J., et al. “Influence of Recombination Center Interaction on the Photoluminescence of AlGaAs/GaAs Heterostructures.” <i>Semiconductor Science and Technology</i>, vol. 28, no. 8, 085012, IOP Publishing, 2013, doi:<a href=\"https://doi.org/10.1088/0268-1242/28/8/085012\">10.1088/0268-1242/28/8/085012</a>.","ieee":"J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures,” <i>Semiconductor Science and Technology</i>, vol. 28, no. 8, 2013.","chicago":"Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Influence of Recombination Center Interaction on the Photoluminescence of AlGaAs/GaAs Heterostructures.” <i>Semiconductor Science and Technology</i> 28, no. 8 (2013). <a href=\"https://doi.org/10.1088/0268-1242/28/8/085012\">https://doi.org/10.1088/0268-1242/28/8/085012</a>.","bibtex":"@article{Schuster_Kim_Batke_Reuter_Wieck_2013, title={Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures}, volume={28}, DOI={<a href=\"https://doi.org/10.1088/0268-1242/28/8/085012\">10.1088/0268-1242/28/8/085012</a>}, number={8085012}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and Wieck, A D}, year={2013} }"},"user_id":"42514","intvolume":"        28","publisher":"IOP Publishing","department":[{"_id":"15"},{"_id":"230"}],"year":"2013","author":[{"full_name":"Schuster, J","first_name":"J","last_name":"Schuster"},{"full_name":"Kim, T Y","first_name":"T Y","last_name":"Kim"},{"full_name":"Batke, E","first_name":"E","last_name":"Batke"},{"full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter","first_name":"Dirk"},{"full_name":"Wieck, A D","first_name":"A D","last_name":"Wieck"}],"doi":"10.1088/0268-1242/28/8/085012","language":[{"iso":"eng"}],"date_updated":"2019-01-31T08:02:04Z","publication_identifier":{"issn":["0268-1242","1361-6641"]},"publication":"Semiconductor Science and Technology","publication_status":"published","article_number":"085012","volume":28,"_id":"7282","title":"Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures"}]