{"author":[{"last_name":"Schuster","full_name":"Schuster, J","first_name":"J"},{"full_name":"Kim, T Y","last_name":"Kim","first_name":"T Y"},{"first_name":"E","full_name":"Batke, E","last_name":"Batke"},{"first_name":"Dirk","last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk"},{"full_name":"Wieck, A D","last_name":"Wieck","first_name":"A D"}],"publisher":"IOP Publishing","title":"Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures","publication_identifier":{"issn":["0268-1242","1361-6641"]},"volume":28,"article_number":"085012","user_id":"42514","year":"2013","_id":"7282","publication":"Semiconductor Science and Technology","citation":{"short":"J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 28 (2013).","apa":"Schuster, J., Kim, T. Y., Batke, E., Reuter, D., &#38; Wieck, A. D. (2013). Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures. <i>Semiconductor Science and Technology</i>, <i>28</i>(8). <a href=\"https://doi.org/10.1088/0268-1242/28/8/085012\">https://doi.org/10.1088/0268-1242/28/8/085012</a>","bibtex":"@article{Schuster_Kim_Batke_Reuter_Wieck_2013, title={Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures}, volume={28}, DOI={<a href=\"https://doi.org/10.1088/0268-1242/28/8/085012\">10.1088/0268-1242/28/8/085012</a>}, number={8085012}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and Wieck, A D}, year={2013} }","chicago":"Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Influence of Recombination Center Interaction on the Photoluminescence of AlGaAs/GaAs Heterostructures.” <i>Semiconductor Science and Technology</i> 28, no. 8 (2013). <a href=\"https://doi.org/10.1088/0268-1242/28/8/085012\">https://doi.org/10.1088/0268-1242/28/8/085012</a>.","ama":"Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures. <i>Semiconductor Science and Technology</i>. 2013;28(8). doi:<a href=\"https://doi.org/10.1088/0268-1242/28/8/085012\">10.1088/0268-1242/28/8/085012</a>","ieee":"J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures,” <i>Semiconductor Science and Technology</i>, vol. 28, no. 8, 2013.","mla":"Schuster, J., et al. “Influence of Recombination Center Interaction on the Photoluminescence of AlGaAs/GaAs Heterostructures.” <i>Semiconductor Science and Technology</i>, vol. 28, no. 8, 085012, IOP Publishing, 2013, doi:<a href=\"https://doi.org/10.1088/0268-1242/28/8/085012\">10.1088/0268-1242/28/8/085012</a>."},"type":"journal_article","date_updated":"2022-01-06T07:03:31Z","issue":"8","publication_status":"published","status":"public","doi":"10.1088/0268-1242/28/8/085012","intvolume":"        28","department":[{"_id":"15"},{"_id":"230"}],"language":[{"iso":"eng"}],"date_created":"2019-01-31T08:01:35Z"}