---
_id: '7286'
author:
- first_name: Genziana
full_name: Bussone, Genziana
last_name: Bussone
- first_name: Rüdiger
full_name: Schott, Rüdiger
last_name: Schott
- first_name: Andreas
full_name: Biermanns, Andreas
last_name: Biermanns
- first_name: Anton
full_name: Davydok, Anton
last_name: Davydok
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Gerardina
full_name: Carbone, Gerardina
last_name: Carbone
- first_name: Tobias U.
full_name: Schülli, Tobias U.
last_name: Schülli
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Ullrich
full_name: Pietsch, Ullrich
last_name: Pietsch
citation:
ama: Bussone G, Schott R, Biermanns A, et al. Grazing-incidence X-ray diffraction
of single GaAs nanowires at locations defined by focused ion beams. Journal
of Applied Crystallography. 2013;46(4):887-892. doi:10.1107/s0021889813004226
apa: Bussone, G., Schott, R., Biermanns, A., Davydok, A., Reuter, D., Carbone, G.,
… Pietsch, U. (2013). Grazing-incidence X-ray diffraction of single GaAs nanowires
at locations defined by focused ion beams. Journal of Applied Crystallography,
46(4), 887–892. https://doi.org/10.1107/s0021889813004226
bibtex: '@article{Bussone_Schott_Biermanns_Davydok_Reuter_Carbone_Schülli_Wieck_Pietsch_2013,
title={Grazing-incidence X-ray diffraction of single GaAs nanowires at locations
defined by focused ion beams}, volume={46}, DOI={10.1107/s0021889813004226},
number={4}, journal={Journal of Applied Crystallography}, publisher={International
Union of Crystallography (IUCr)}, author={Bussone, Genziana and Schott, Rüdiger
and Biermanns, Andreas and Davydok, Anton and Reuter, Dirk and Carbone, Gerardina
and Schülli, Tobias U. and Wieck, Andreas D. and Pietsch, Ullrich}, year={2013},
pages={887–892} }'
chicago: 'Bussone, Genziana, Rüdiger Schott, Andreas Biermanns, Anton Davydok, Dirk
Reuter, Gerardina Carbone, Tobias U. Schülli, Andreas D. Wieck, and Ullrich Pietsch.
“Grazing-Incidence X-Ray Diffraction of Single GaAs Nanowires at Locations Defined
by Focused Ion Beams.” Journal of Applied Crystallography 46, no. 4 (2013):
887–92. https://doi.org/10.1107/s0021889813004226.'
ieee: G. Bussone et al., “Grazing-incidence X-ray diffraction of single GaAs
nanowires at locations defined by focused ion beams,” Journal of Applied Crystallography,
vol. 46, no. 4, pp. 887–892, 2013.
mla: Bussone, Genziana, et al. “Grazing-Incidence X-Ray Diffraction of Single GaAs
Nanowires at Locations Defined by Focused Ion Beams.” Journal of Applied Crystallography,
vol. 46, no. 4, International Union of Crystallography (IUCr), 2013, pp. 887–92,
doi:10.1107/s0021889813004226.
short: G. Bussone, R. Schott, A. Biermanns, A. Davydok, D. Reuter, G. Carbone, T.U.
Schülli, A.D. Wieck, U. Pietsch, Journal of Applied Crystallography 46 (2013)
887–892.
date_created: 2019-01-31T08:45:31Z
date_updated: 2022-01-06T07:03:32Z
department:
- _id: '15'
- _id: '230'
doi: 10.1107/s0021889813004226
intvolume: ' 46'
issue: '4'
language:
- iso: eng
page: 887-892
publication: Journal of Applied Crystallography
publication_identifier:
issn:
- 0021-8898
publication_status: published
publisher: International Union of Crystallography (IUCr)
status: public
title: Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined
by focused ion beams
type: journal_article
user_id: '42514'
volume: 46
year: '2013'
...