--- _id: '7286' author: - first_name: Genziana full_name: Bussone, Genziana last_name: Bussone - first_name: Rüdiger full_name: Schott, Rüdiger last_name: Schott - first_name: Andreas full_name: Biermanns, Andreas last_name: Biermanns - first_name: Anton full_name: Davydok, Anton last_name: Davydok - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Gerardina full_name: Carbone, Gerardina last_name: Carbone - first_name: Tobias U. full_name: Schülli, Tobias U. last_name: Schülli - first_name: Andreas D. full_name: Wieck, Andreas D. last_name: Wieck - first_name: Ullrich full_name: Pietsch, Ullrich last_name: Pietsch citation: ama: Bussone G, Schott R, Biermanns A, et al. Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams. Journal of Applied Crystallography. 2013;46(4):887-892. doi:10.1107/s0021889813004226 apa: Bussone, G., Schott, R., Biermanns, A., Davydok, A., Reuter, D., Carbone, G., … Pietsch, U. (2013). Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams. Journal of Applied Crystallography, 46(4), 887–892. https://doi.org/10.1107/s0021889813004226 bibtex: '@article{Bussone_Schott_Biermanns_Davydok_Reuter_Carbone_Schülli_Wieck_Pietsch_2013, title={Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams}, volume={46}, DOI={10.1107/s0021889813004226}, number={4}, journal={Journal of Applied Crystallography}, publisher={International Union of Crystallography (IUCr)}, author={Bussone, Genziana and Schott, Rüdiger and Biermanns, Andreas and Davydok, Anton and Reuter, Dirk and Carbone, Gerardina and Schülli, Tobias U. and Wieck, Andreas D. and Pietsch, Ullrich}, year={2013}, pages={887–892} }' chicago: 'Bussone, Genziana, Rüdiger Schott, Andreas Biermanns, Anton Davydok, Dirk Reuter, Gerardina Carbone, Tobias U. Schülli, Andreas D. Wieck, and Ullrich Pietsch. “Grazing-Incidence X-Ray Diffraction of Single GaAs Nanowires at Locations Defined by Focused Ion Beams.” Journal of Applied Crystallography 46, no. 4 (2013): 887–92. https://doi.org/10.1107/s0021889813004226.' ieee: G. Bussone et al., “Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams,” Journal of Applied Crystallography, vol. 46, no. 4, pp. 887–892, 2013. mla: Bussone, Genziana, et al. “Grazing-Incidence X-Ray Diffraction of Single GaAs Nanowires at Locations Defined by Focused Ion Beams.” Journal of Applied Crystallography, vol. 46, no. 4, International Union of Crystallography (IUCr), 2013, pp. 887–92, doi:10.1107/s0021889813004226. short: G. Bussone, R. Schott, A. Biermanns, A. Davydok, D. Reuter, G. Carbone, T.U. Schülli, A.D. Wieck, U. Pietsch, Journal of Applied Crystallography 46 (2013) 887–892. date_created: 2019-01-31T08:45:31Z date_updated: 2022-01-06T07:03:32Z department: - _id: '15' - _id: '230' doi: 10.1107/s0021889813004226 intvolume: ' 46' issue: '4' language: - iso: eng page: 887-892 publication: Journal of Applied Crystallography publication_identifier: issn: - 0021-8898 publication_status: published publisher: International Union of Crystallography (IUCr) status: public title: Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams type: journal_article user_id: '42514' volume: 46 year: '2013' ...