[{"department":[{"_id":"15"},{"_id":"230"}],"author":[{"full_name":"Koop, E J","last_name":"Koop","first_name":"E J"},{"first_name":"M J","last_name":"Iqbal","full_name":"Iqbal, M J"},{"first_name":"F","full_name":"Limbach, F","last_name":"Limbach"},{"last_name":"Boute","full_name":"Boute, M","first_name":"M"},{"first_name":"B J","last_name":"van Wees","full_name":"van Wees, B J"},{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"first_name":"A D","full_name":"Wieck, A D","last_name":"Wieck"},{"first_name":"B J","full_name":"Kooi, B J","last_name":"Kooi"},{"last_name":"van der Wal","full_name":"van der Wal, C H","first_name":"C H"}],"publication_identifier":{"issn":["0268-1242","1361-6641"]},"_id":"7295","issue":"2","intvolume":"        28","publication_status":"published","type":"journal_article","language":[{"iso":"eng"}],"publication":"Semiconductor Science and Technology","date_created":"2019-01-31T08:59:46Z","article_number":"025006","publisher":"IOP Publishing","year":"2013","title":"On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures","citation":{"ieee":"E. J. Koop <i>et al.</i>, “On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures,” <i>Semiconductor Science and Technology</i>, vol. 28, no. 2, 2013.","apa":"Koop, E. J., Iqbal, M. J., Limbach, F., Boute, M., van Wees, B. J., Reuter, D., … van der Wal, C. H. (2013). On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures. <i>Semiconductor Science and Technology</i>, <i>28</i>(2). <a href=\"https://doi.org/10.1088/0268-1242/28/2/025006\">https://doi.org/10.1088/0268-1242/28/2/025006</a>","bibtex":"@article{Koop_Iqbal_Limbach_Boute_van Wees_Reuter_Wieck_Kooi_van der Wal_2013, title={On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures}, volume={28}, DOI={<a href=\"https://doi.org/10.1088/0268-1242/28/2/025006\">10.1088/0268-1242/28/2/025006</a>}, number={2025006}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Koop, E J and Iqbal, M J and Limbach, F and Boute, M and van Wees, B J and Reuter, Dirk and Wieck, A D and Kooi, B J and van der Wal, C H}, year={2013} }","mla":"Koop, E. J., et al. “On the Annealing Mechanism of AuGe/Ni/Au Ohmic Contacts to a Two-Dimensional Electron Gas in GaAs/AlxGa1−xAs Heterostructures.” <i>Semiconductor Science and Technology</i>, vol. 28, no. 2, 025006, IOP Publishing, 2013, doi:<a href=\"https://doi.org/10.1088/0268-1242/28/2/025006\">10.1088/0268-1242/28/2/025006</a>.","chicago":"Koop, E J, M J Iqbal, F Limbach, M Boute, B J van Wees, Dirk Reuter, A D Wieck, B J Kooi, and C H van der Wal. “On the Annealing Mechanism of AuGe/Ni/Au Ohmic Contacts to a Two-Dimensional Electron Gas in GaAs/AlxGa1−xAs Heterostructures.” <i>Semiconductor Science and Technology</i> 28, no. 2 (2013). <a href=\"https://doi.org/10.1088/0268-1242/28/2/025006\">https://doi.org/10.1088/0268-1242/28/2/025006</a>.","ama":"Koop EJ, Iqbal MJ, Limbach F, et al. On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures. <i>Semiconductor Science and Technology</i>. 2013;28(2). doi:<a href=\"https://doi.org/10.1088/0268-1242/28/2/025006\">10.1088/0268-1242/28/2/025006</a>","short":"E.J. Koop, M.J. Iqbal, F. Limbach, M. Boute, B.J. van Wees, D. Reuter, A.D. Wieck, B.J. Kooi, C.H. van der Wal, Semiconductor Science and Technology 28 (2013)."},"user_id":"42514","date_updated":"2019-01-31T09:00:06Z","status":"public","doi":"10.1088/0268-1242/28/2/025006","volume":28}]