---
_id: '7295'
article_number: '025006'
author:
- first_name: E J
  full_name: Koop, E J
  last_name: Koop
- first_name: M J
  full_name: Iqbal, M J
  last_name: Iqbal
- first_name: F
  full_name: Limbach, F
  last_name: Limbach
- first_name: M
  full_name: Boute, M
  last_name: Boute
- first_name: B J
  full_name: van Wees, B J
  last_name: van Wees
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: A D
  full_name: Wieck, A D
  last_name: Wieck
- first_name: B J
  full_name: Kooi, B J
  last_name: Kooi
- first_name: C H
  full_name: van der Wal, C H
  last_name: van der Wal
citation:
  ama: Koop EJ, Iqbal MJ, Limbach F, et al. On the annealing mechanism of AuGe/Ni/Au
    ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures.
    <i>Semiconductor Science and Technology</i>. 2013;28(2). doi:<a href="https://doi.org/10.1088/0268-1242/28/2/025006">10.1088/0268-1242/28/2/025006</a>
  apa: Koop, E. J., Iqbal, M. J., Limbach, F., Boute, M., van Wees, B. J., Reuter,
    D., … van der Wal, C. H. (2013). On the annealing mechanism of AuGe/Ni/Au ohmic
    contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures.
    <i>Semiconductor Science and Technology</i>, <i>28</i>(2). <a href="https://doi.org/10.1088/0268-1242/28/2/025006">https://doi.org/10.1088/0268-1242/28/2/025006</a>
  bibtex: '@article{Koop_Iqbal_Limbach_Boute_van Wees_Reuter_Wieck_Kooi_van der Wal_2013,
    title={On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional
    electron gas in GaAs/AlxGa1−xAs heterostructures}, volume={28}, DOI={<a href="https://doi.org/10.1088/0268-1242/28/2/025006">10.1088/0268-1242/28/2/025006</a>},
    number={2025006}, journal={Semiconductor Science and Technology}, publisher={IOP
    Publishing}, author={Koop, E J and Iqbal, M J and Limbach, F and Boute, M and
    van Wees, B J and Reuter, Dirk and Wieck, A D and Kooi, B J and van der Wal, C
    H}, year={2013} }'
  chicago: Koop, E J, M J Iqbal, F Limbach, M Boute, B J van Wees, Dirk Reuter, A
    D Wieck, B J Kooi, and C H van der Wal. “On the Annealing Mechanism of AuGe/Ni/Au
    Ohmic Contacts to a Two-Dimensional Electron Gas in GaAs/AlxGa1−xAs Heterostructures.”
    <i>Semiconductor Science and Technology</i> 28, no. 2 (2013). <a href="https://doi.org/10.1088/0268-1242/28/2/025006">https://doi.org/10.1088/0268-1242/28/2/025006</a>.
  ieee: E. J. Koop <i>et al.</i>, “On the annealing mechanism of AuGe/Ni/Au ohmic
    contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures,”
    <i>Semiconductor Science and Technology</i>, vol. 28, no. 2, 2013.
  mla: Koop, E. J., et al. “On the Annealing Mechanism of AuGe/Ni/Au Ohmic Contacts
    to a Two-Dimensional Electron Gas in GaAs/AlxGa1−xAs Heterostructures.” <i>Semiconductor
    Science and Technology</i>, vol. 28, no. 2, 025006, IOP Publishing, 2013, doi:<a
    href="https://doi.org/10.1088/0268-1242/28/2/025006">10.1088/0268-1242/28/2/025006</a>.
  short: E.J. Koop, M.J. Iqbal, F. Limbach, M. Boute, B.J. van Wees, D. Reuter, A.D.
    Wieck, B.J. Kooi, C.H. van der Wal, Semiconductor Science and Technology 28 (2013).
date_created: 2019-01-31T08:59:46Z
date_updated: 2022-01-06T07:03:32Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/28/2/025006
intvolume: '        28'
issue: '2'
language:
- iso: eng
publication: Semiconductor Science and Technology
publication_identifier:
  issn:
  - 0268-1242
  - 1361-6641
publication_status: published
publisher: IOP Publishing
status: public
title: On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional
  electron gas in GaAs/AlxGa1−xAs heterostructures
type: journal_article
user_id: '42514'
volume: 28
year: '2013'
...