{"author":[{"first_name":"K.","last_name":"Huba","full_name":"Huba, K."},{"full_name":"Krix, D.","last_name":"Krix","first_name":"D."},{"first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik","id":"20798","last_name":"Meier"},{"first_name":"H.","last_name":"Nienhaus","full_name":"Nienhaus, H."}],"publisher":"American Vacuum Society","status":"public","intvolume":"        27","year":"2009","user_id":"20798","citation":{"ama":"Huba K, Krix D, Meier C, Nienhaus H. Ultrathin K∕p-Si(001) Schottky diodes as detectors of chemically generated hot charge carriers. <i>Journal of Vacuum Science &#38; Technology A: Vacuum, Surfaces, and Films</i>. 2009;27(4):889-894. doi:<a href=\"https://doi.org/10.1116/1.3100218\">10.1116/1.3100218</a>","mla":"Huba, K., et al. “Ultrathin K∕p-Si(001) Schottky Diodes as Detectors of Chemically Generated Hot Charge Carriers.” <i>Journal of Vacuum Science &#38; Technology A: Vacuum, Surfaces, and Films</i>, vol. 27, no. 4, American Vacuum Society, 2009, pp. 889–94, doi:<a href=\"https://doi.org/10.1116/1.3100218\">10.1116/1.3100218</a>.","bibtex":"@article{Huba_Krix_Meier_Nienhaus_2009, title={Ultrathin K∕p-Si(001) Schottky diodes as detectors of chemically generated hot charge carriers}, volume={27}, DOI={<a href=\"https://doi.org/10.1116/1.3100218\">10.1116/1.3100218</a>}, number={4}, journal={Journal of Vacuum Science &#38; Technology A: Vacuum, Surfaces, and Films}, publisher={American Vacuum Society}, author={Huba, K. and Krix, D. and Meier, Cedrik and Nienhaus, H.}, year={2009}, pages={889–894} }","ieee":"K. Huba, D. Krix, C. Meier, and H. Nienhaus, “Ultrathin K∕p-Si(001) Schottky diodes as detectors of chemically generated hot charge carriers,” <i>Journal of Vacuum Science &#38; Technology A: Vacuum, Surfaces, and Films</i>, vol. 27, no. 4, pp. 889–894, 2009.","chicago":"Huba, K., D. Krix, Cedrik Meier, and H. Nienhaus. “Ultrathin K∕p-Si(001) Schottky Diodes as Detectors of Chemically Generated Hot Charge Carriers.” <i>Journal of Vacuum Science &#38; Technology A: Vacuum, Surfaces, and Films</i> 27, no. 4 (2009): 889–94. <a href=\"https://doi.org/10.1116/1.3100218\">https://doi.org/10.1116/1.3100218</a>.","short":"K. Huba, D. Krix, C. Meier, H. Nienhaus, Journal of Vacuum Science &#38; Technology A: Vacuum, Surfaces, and Films 27 (2009) 889–894.","apa":"Huba, K., Krix, D., Meier, C., &#38; Nienhaus, H. (2009). Ultrathin K∕p-Si(001) Schottky diodes as detectors of chemically generated hot charge carriers. <i>Journal of Vacuum Science &#38; Technology A: Vacuum, Surfaces, and Films</i>, <i>27</i>(4), 889–894. <a href=\"https://doi.org/10.1116/1.3100218\">https://doi.org/10.1116/1.3100218</a>"},"title":"Ultrathin K∕p-Si(001) Schottky diodes as detectors of chemically generated hot charge carriers","_id":"7499","department":[{"_id":"15"},{"_id":"230"},{"_id":"287"},{"_id":"35"}],"publication_identifier":{"issn":["0734-2101","1520-8559"]},"volume":27,"language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:39Z","type":"journal_article","publication":"Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films","date_created":"2019-02-04T14:47:36Z","publication_status":"published","issue":"4","page":"889-894","doi":"10.1116/1.3100218"}