{"author":[{"first_name":"H.","full_name":"Nienhaus, H.","last_name":"Nienhaus"},{"first_name":"V.","last_name":"Kravets","full_name":"Kravets, V."},{"first_name":"S.","full_name":"Koutouzov, S.","last_name":"Koutouzov"},{"orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","full_name":"Meier, Cedrik","first_name":"Cedrik","id":"20798"},{"first_name":"A.","last_name":"Lorke","full_name":"Lorke, A."},{"first_name":"H.","last_name":"Wiggers","full_name":"Wiggers, H."},{"first_name":"M. K.","full_name":"Kennedy, M. K.","last_name":"Kennedy"},{"last_name":"Kruis","full_name":"Kruis, F. E.","first_name":"F. E."}],"year":"2006","article_number":"1156","citation":{"chicago":"Nienhaus, H., V. Kravets, S. Koutouzov, Cedrik Meier, A. Lorke, H. Wiggers, M. K. Kennedy, and F. E. Kruis. “Quantum Size Effect of Valence Band Plasmon Energies in Si and SnO[Sub x] Nanoparticles.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 24, no. 3 (2006). https://doi.org/10.1116/1.2190658.","ama":"Nienhaus H, Kravets V, Koutouzov S, et al. Quantum size effect of valence band plasmon energies in Si and SnO[sub x] nanoparticles. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 2006;24(3). doi:10.1116/1.2190658","short":"H. Nienhaus, V. Kravets, S. Koutouzov, C. Meier, A. Lorke, H. Wiggers, M.K. Kennedy, F.E. Kruis, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 24 (2006).","ieee":"H. Nienhaus et al., “Quantum size effect of valence band plasmon energies in Si and SnO[sub x] nanoparticles,” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 24, no. 3, 2006.","bibtex":"@article{Nienhaus_Kravets_Koutouzov_Meier_Lorke_Wiggers_Kennedy_Kruis_2006, title={Quantum size effect of valence band plasmon energies in Si and SnO[sub x] nanoparticles}, volume={24}, DOI={10.1116/1.2190658}, number={31156}, journal={Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures}, publisher={American Vacuum Society}, author={Nienhaus, H. and Kravets, V. and Koutouzov, S. and Meier, Cedrik and Lorke, A. and Wiggers, H. and Kennedy, M. K. and Kruis, F. E.}, year={2006} }","apa":"Nienhaus, H., Kravets, V., Koutouzov, S., Meier, C., Lorke, A., Wiggers, H., … Kruis, F. E. (2006). Quantum size effect of valence band plasmon energies in Si and SnO[sub x] nanoparticles. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 24(3). https://doi.org/10.1116/1.2190658","mla":"Nienhaus, H., et al. “Quantum Size Effect of Valence Band Plasmon Energies in Si and SnO[Sub x] Nanoparticles.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 24, no. 3, 1156, American Vacuum Society, 2006, doi:10.1116/1.2190658."},"issue":"3","extern":"1","_id":"7649","doi":"10.1116/1.2190658","language":[{"iso":"eng"}],"publication_identifier":{"issn":["1071-1023"]},"volume":24,"publisher":"American Vacuum Society","type":"journal_article","publication_status":"published","date_created":"2019-02-13T11:39:01Z","status":"public","user_id":"20798","intvolume":" 24","department":[{"_id":"15"}],"title":"Quantum size effect of valence band plasmon energies in Si and SnO[sub x] nanoparticles","date_updated":"2022-01-06T07:03:43Z","publication":"Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures"}