{"language":[{"iso":"eng"}],"type":"journal_article","date_updated":"2022-01-06T07:03:43Z","publication":"Applied Physics Letters","year":"2005","status":"public","intvolume":"        87","publisher":"AIP Publishing","author":[{"first_name":"R.","full_name":"Sharma, R.","last_name":"Sharma"},{"first_name":"E. D.","full_name":"Haberer, E. D.","last_name":"Haberer"},{"orcid":"https://orcid.org/0000-0002-3787-3572","first_name":"Cedrik","last_name":"Meier","id":"20798","full_name":"Meier, Cedrik"},{"full_name":"Hu, E. L.","last_name":"Hu","first_name":"E. L."},{"first_name":"S.","full_name":"Nakamura, S.","last_name":"Nakamura"}],"extern":"1","volume":87,"title":"Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching","_id":"7656","publication_identifier":{"issn":["0003-6951","1077-3118"]},"department":[{"_id":"15"}],"user_id":"20798","citation":{"short":"R. Sharma, E.D. Haberer, C. Meier, E.L. Hu, S. Nakamura, Applied Physics Letters 87 (2005).","chicago":"Sharma, R., E. D. Haberer, Cedrik Meier, E. L. Hu, and S. Nakamura. “Vertically Oriented GaN-Based Air-Gap Distributed Bragg Reflector Structure Fabricated Using Band-Gap-Selective Photoelectrochemical Etching.” <i>Applied Physics Letters</i> 87, no. 5 (2005). <a href=\"https://doi.org/10.1063/1.2008380\">https://doi.org/10.1063/1.2008380</a>.","bibtex":"@article{Sharma_Haberer_Meier_Hu_Nakamura_2005, title={Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching}, volume={87}, DOI={<a href=\"https://doi.org/10.1063/1.2008380\">10.1063/1.2008380</a>}, number={5051107}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Sharma, R. and Haberer, E. D. and Meier, Cedrik and Hu, E. L. and Nakamura, S.}, year={2005} }","apa":"Sharma, R., Haberer, E. D., Meier, C., Hu, E. L., &#38; Nakamura, S. (2005). Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching. <i>Applied Physics Letters</i>, <i>87</i>(5). <a href=\"https://doi.org/10.1063/1.2008380\">https://doi.org/10.1063/1.2008380</a>","mla":"Sharma, R., et al. “Vertically Oriented GaN-Based Air-Gap Distributed Bragg Reflector Structure Fabricated Using Band-Gap-Selective Photoelectrochemical Etching.” <i>Applied Physics Letters</i>, vol. 87, no. 5, 051107, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.2008380\">10.1063/1.2008380</a>.","ama":"Sharma R, Haberer ED, Meier C, Hu EL, Nakamura S. Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching. <i>Applied Physics Letters</i>. 2005;87(5). doi:<a href=\"https://doi.org/10.1063/1.2008380\">10.1063/1.2008380</a>","ieee":"R. Sharma, E. D. Haberer, C. Meier, E. L. Hu, and S. Nakamura, “Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching,” <i>Applied Physics Letters</i>, vol. 87, no. 5, 2005."},"publication_status":"published","issue":"5","article_number":"051107","doi":"10.1063/1.2008380","date_created":"2019-02-13T11:50:37Z"}