--- _id: '7659' article_number: '031901' author: - first_name: Arpan full_name: Chakraborty, Arpan last_name: Chakraborty - first_name: Stacia full_name: Keller, Stacia last_name: Keller - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: Benjamin A. full_name: Haskell, Benjamin A. last_name: Haskell - first_name: Salka full_name: Keller, Salka last_name: Keller - first_name: Patrick full_name: Waltereit, Patrick last_name: Waltereit - first_name: Steven P. full_name: DenBaars, Steven P. last_name: DenBaars - first_name: Shuji full_name: Nakamura, Shuji last_name: Nakamura - first_name: James S. full_name: Speck, James S. last_name: Speck - first_name: Umesh K. full_name: Mishra, Umesh K. last_name: Mishra citation: ama: Chakraborty A, Keller S, Meier C, et al. Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN. Applied Physics Letters. 2005;86(3). doi:10.1063/1.1851007 apa: Chakraborty, A., Keller, S., Meier, C., Haskell, B. A., Keller, S., Waltereit, P., … Mishra, U. K. (2005). Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN. Applied Physics Letters, 86(3). https://doi.org/10.1063/1.1851007 bibtex: '@article{Chakraborty_Keller_Meier_Haskell_Keller_Waltereit_DenBaars_Nakamura_Speck_Mishra_2005, title={Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN}, volume={86}, DOI={10.1063/1.1851007}, number={3031901}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chakraborty, Arpan and Keller, Stacia and Meier, Cedrik and Haskell, Benjamin A. and Keller, Salka and Waltereit, Patrick and DenBaars, Steven P. and Nakamura, Shuji and Speck, James S. and Mishra, Umesh K.}, year={2005} }' chicago: Chakraborty, Arpan, Stacia Keller, Cedrik Meier, Benjamin A. Haskell, Salka Keller, Patrick Waltereit, Steven P. DenBaars, Shuji Nakamura, James S. Speck, and Umesh K. Mishra. “Properties of Nonpolar A-Plane InGaN∕GaN Multiple Quantum Wells Grown on Lateral Epitaxially Overgrown a-Plane GaN.” Applied Physics Letters 86, no. 3 (2005). https://doi.org/10.1063/1.1851007. ieee: A. Chakraborty et al., “Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN,” Applied Physics Letters, vol. 86, no. 3, 2005. mla: Chakraborty, Arpan, et al. “Properties of Nonpolar A-Plane InGaN∕GaN Multiple Quantum Wells Grown on Lateral Epitaxially Overgrown a-Plane GaN.” Applied Physics Letters, vol. 86, no. 3, 031901, AIP Publishing, 2005, doi:10.1063/1.1851007. short: A. Chakraborty, S. Keller, C. Meier, B.A. Haskell, S. Keller, P. Waltereit, S.P. DenBaars, S. Nakamura, J.S. Speck, U.K. Mishra, Applied Physics Letters 86 (2005). date_created: 2019-02-13T12:27:05Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.1851007 extern: '1' intvolume: ' 86' issue: '3' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN type: journal_article user_id: '20798' volume: 86 year: '2005' ...