---
_id: '7659'
article_number: '031901'
author:
- first_name: Arpan
full_name: Chakraborty, Arpan
last_name: Chakraborty
- first_name: Stacia
full_name: Keller, Stacia
last_name: Keller
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Benjamin A.
full_name: Haskell, Benjamin A.
last_name: Haskell
- first_name: Salka
full_name: Keller, Salka
last_name: Keller
- first_name: Patrick
full_name: Waltereit, Patrick
last_name: Waltereit
- first_name: Steven P.
full_name: DenBaars, Steven P.
last_name: DenBaars
- first_name: Shuji
full_name: Nakamura, Shuji
last_name: Nakamura
- first_name: James S.
full_name: Speck, James S.
last_name: Speck
- first_name: Umesh K.
full_name: Mishra, Umesh K.
last_name: Mishra
citation:
ama: Chakraborty A, Keller S, Meier C, et al. Properties of nonpolar a-plane InGaN∕GaN
multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN. Applied
Physics Letters. 2005;86(3). doi:10.1063/1.1851007
apa: Chakraborty, A., Keller, S., Meier, C., Haskell, B. A., Keller, S., Waltereit,
P., … Mishra, U. K. (2005). Properties of nonpolar a-plane InGaN∕GaN multiple
quantum wells grown on lateral epitaxially overgrown a-plane GaN. Applied Physics
Letters, 86(3). https://doi.org/10.1063/1.1851007
bibtex: '@article{Chakraborty_Keller_Meier_Haskell_Keller_Waltereit_DenBaars_Nakamura_Speck_Mishra_2005,
title={Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on
lateral epitaxially overgrown a-plane GaN}, volume={86}, DOI={10.1063/1.1851007},
number={3031901}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Chakraborty, Arpan and Keller, Stacia and Meier, Cedrik and Haskell, Benjamin
A. and Keller, Salka and Waltereit, Patrick and DenBaars, Steven P. and Nakamura,
Shuji and Speck, James S. and Mishra, Umesh K.}, year={2005} }'
chicago: Chakraborty, Arpan, Stacia Keller, Cedrik Meier, Benjamin A. Haskell, Salka
Keller, Patrick Waltereit, Steven P. DenBaars, Shuji Nakamura, James S. Speck,
and Umesh K. Mishra. “Properties of Nonpolar A-Plane InGaN∕GaN Multiple Quantum
Wells Grown on Lateral Epitaxially Overgrown a-Plane GaN.” Applied Physics
Letters 86, no. 3 (2005). https://doi.org/10.1063/1.1851007.
ieee: A. Chakraborty et al., “Properties of nonpolar a-plane InGaN∕GaN multiple
quantum wells grown on lateral epitaxially overgrown a-plane GaN,” Applied
Physics Letters, vol. 86, no. 3, 2005.
mla: Chakraborty, Arpan, et al. “Properties of Nonpolar A-Plane InGaN∕GaN Multiple
Quantum Wells Grown on Lateral Epitaxially Overgrown a-Plane GaN.” Applied
Physics Letters, vol. 86, no. 3, 031901, AIP Publishing, 2005, doi:10.1063/1.1851007.
short: A. Chakraborty, S. Keller, C. Meier, B.A. Haskell, S. Keller, P. Waltereit,
S.P. DenBaars, S. Nakamura, J.S. Speck, U.K. Mishra, Applied Physics Letters 86
(2005).
date_created: 2019-02-13T12:27:05Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.1851007
extern: '1'
intvolume: ' 86'
issue: '3'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral
epitaxially overgrown a-plane GaN
type: journal_article
user_id: '20798'
volume: 86
year: '2005'
...