{"doi":"10.1016/s1386-9477(02)00849-4","page":"503-504","publication_status":"published","date_created":"2019-02-13T14:50:50Z","date_updated":"2022-01-06T07:03:43Z","type":"journal_article","publication":"Physica E: Low-dimensional Systems and Nanostructures","language":[{"iso":"eng"}],"volume":17,"title":"Fabrication of high quality two-dimensional electron gases by overgrowth of focused ion beam implantation doped AlxGa1−xAs","_id":"7682","department":[{"_id":"15"}],"publication_identifier":{"issn":["1386-9477"]},"user_id":"20798","citation":{"apa":"Riedesel, C., Meier, C., Schafmeister, P., Reuter, D., &#38; Wieck, A. . (2003). Fabrication of high quality two-dimensional electron gases by overgrowth of focused ion beam implantation doped AlxGa1−xAs. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>17</i>, 503–504. <a href=\"https://doi.org/10.1016/s1386-9477(02)00849-4\">https://doi.org/10.1016/s1386-9477(02)00849-4</a>","short":"C. Riedesel, C. Meier, P. Schafmeister, D. Reuter, A.. Wieck, Physica E: Low-Dimensional Systems and Nanostructures 17 (2003) 503–504.","chicago":"Riedesel, C, Cedrik Meier, P Schafmeister, D Reuter, and A.D Wieck. “Fabrication of High Quality Two-Dimensional Electron Gases by Overgrowth of Focused Ion Beam Implantation Doped AlxGa1−xAs.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 17 (2003): 503–4. <a href=\"https://doi.org/10.1016/s1386-9477(02)00849-4\">https://doi.org/10.1016/s1386-9477(02)00849-4</a>.","ieee":"C. Riedesel, C. Meier, P. Schafmeister, D. Reuter, and A. . Wieck, “Fabrication of high quality two-dimensional electron gases by overgrowth of focused ion beam implantation doped AlxGa1−xAs,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 17, pp. 503–504, 2003.","ama":"Riedesel C, Meier C, Schafmeister P, Reuter D, Wieck A. Fabrication of high quality two-dimensional electron gases by overgrowth of focused ion beam implantation doped AlxGa1−xAs. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2003;17:503-504. doi:<a href=\"https://doi.org/10.1016/s1386-9477(02)00849-4\">10.1016/s1386-9477(02)00849-4</a>","bibtex":"@article{Riedesel_Meier_Schafmeister_Reuter_Wieck_2003, title={Fabrication of high quality two-dimensional electron gases by overgrowth of focused ion beam implantation doped AlxGa1−xAs}, volume={17}, DOI={<a href=\"https://doi.org/10.1016/s1386-9477(02)00849-4\">10.1016/s1386-9477(02)00849-4</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, publisher={Elsevier BV}, author={Riedesel, C and Meier, Cedrik and Schafmeister, P and Reuter, D and Wieck, A.D}, year={2003}, pages={503–504} }","mla":"Riedesel, C., et al. “Fabrication of High Quality Two-Dimensional Electron Gases by Overgrowth of Focused Ion Beam Implantation Doped AlxGa1−xAs.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 17, Elsevier BV, 2003, pp. 503–04, doi:<a href=\"https://doi.org/10.1016/s1386-9477(02)00849-4\">10.1016/s1386-9477(02)00849-4</a>."},"year":"2003","status":"public","intvolume":"        17","author":[{"last_name":"Riedesel","full_name":"Riedesel, C","first_name":"C"},{"full_name":"Meier, Cedrik","id":"20798","last_name":"Meier","first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572"},{"last_name":"Schafmeister","full_name":"Schafmeister, P","first_name":"P"},{"first_name":"D","full_name":"Reuter, D","last_name":"Reuter"},{"full_name":"Wieck, A.D","last_name":"Wieck","first_name":"A.D"}],"publisher":"Elsevier BV","extern":"1"}