[{"publication":"Applied Physics Letters","publisher":"AIP Publishing","author":[{"last_name":"Reuter","first_name":"D.","full_name":"Reuter, D."},{"first_name":"C.","full_name":"Riedesel, C.","last_name":"Riedesel"},{"last_name":"Schafmeister","full_name":"Schafmeister, P.","first_name":"P."},{"first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik","last_name":"Meier","id":"20798"},{"full_name":"Wieck, A. D.","first_name":"A. D.","last_name":"Wieck"}],"date_created":"2019-02-13T14:51:34Z","status":"public","volume":82,"extern":"1","user_id":"20798","page":"481-483","citation":{"chicago":"Reuter, D., C. Riedesel, P. Schafmeister, Cedrik Meier, and A. D. Wieck. “Fabrication of High-Quality Two-Dimensional Electron Gases by Overgrowth of Focused-Ion-Beam-Doped AlxGa1−xAs.” Applied Physics Letters 82, no. 3 (2003): 481–83. https://doi.org/10.1063/1.1539925.","ama":"Reuter D, Riedesel C, Schafmeister P, Meier C, Wieck AD. Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs. Applied Physics Letters. 2003;82(3):481-483. doi:10.1063/1.1539925","apa":"Reuter, D., Riedesel, C., Schafmeister, P., Meier, C., & Wieck, A. D. (2003). Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs. Applied Physics Letters, 82(3), 481–483. https://doi.org/10.1063/1.1539925","bibtex":"@article{Reuter_Riedesel_Schafmeister_Meier_Wieck_2003, title={Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs}, volume={82}, DOI={10.1063/1.1539925}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Reuter, D. and Riedesel, C. and Schafmeister, P. and Meier, Cedrik and Wieck, A. D.}, year={2003}, pages={481–483} }","mla":"Reuter, D., et al. “Fabrication of High-Quality Two-Dimensional Electron Gases by Overgrowth of Focused-Ion-Beam-Doped AlxGa1−xAs.” Applied Physics Letters, vol. 82, no. 3, AIP Publishing, 2003, pp. 481–83, doi:10.1063/1.1539925.","short":"D. Reuter, C. Riedesel, P. Schafmeister, C. Meier, A.D. Wieck, Applied Physics Letters 82 (2003) 481–483.","ieee":"D. Reuter, C. Riedesel, P. Schafmeister, C. Meier, and A. D. Wieck, “Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs,” Applied Physics Letters, vol. 82, no. 3, pp. 481–483, 2003."},"type":"journal_article","year":"2003","intvolume":" 82","_id":"7683","issue":"3","department":[{"_id":"15"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","title":"Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:43Z","doi":"10.1063/1.1539925"}]