{"language":[{"iso":"eng"}],"page":"1906-1907","type":"journal_article","citation":{"ieee":"D. Diaconescu, S. Hoch, C. Heidtkamp, C. Meier, D. Reuter, and A. D. Wieck, “A new peak in the bend resistance of a four-terminal device written by FIB implantation,” Physica B: Condensed Matter, vol. 284–288, pp. 1906–1907, 2000.","short":"D. Diaconescu, S. Hoch, C. Heidtkamp, C. Meier, D. Reuter, A.D. Wieck, Physica B: Condensed Matter 284–288 (2000) 1906–1907.","mla":"Diaconescu, Dorina, et al. “A New Peak in the Bend Resistance of a Four-Terminal Device Written by FIB Implantation.” Physica B: Condensed Matter, vol. 284–288, Elsevier BV, 2000, pp. 1906–07, doi:10.1016/s0921-4526(99)03002-1.","bibtex":"@article{Diaconescu_Hoch_Heidtkamp_Meier_Reuter_Wieck_2000, title={A new peak in the bend resistance of a four-terminal device written by FIB implantation}, volume={284–288}, DOI={10.1016/s0921-4526(99)03002-1}, journal={Physica B: Condensed Matter}, publisher={Elsevier BV}, author={Diaconescu, Dorina and Hoch, Sascha and Heidtkamp, Christian and Meier, Cedrik and Reuter, Dirk and Wieck, Andreas D}, year={2000}, pages={1906–1907} }","chicago":"Diaconescu, Dorina, Sascha Hoch, Christian Heidtkamp, Cedrik Meier, Dirk Reuter, and Andreas D Wieck. “A New Peak in the Bend Resistance of a Four-Terminal Device Written by FIB Implantation.” Physica B: Condensed Matter 284–288 (2000): 1906–7. https://doi.org/10.1016/s0921-4526(99)03002-1.","ama":"Diaconescu D, Hoch S, Heidtkamp C, Meier C, Reuter D, Wieck AD. A new peak in the bend resistance of a four-terminal device written by FIB implantation. Physica B: Condensed Matter. 2000;284-288:1906-1907. doi:10.1016/s0921-4526(99)03002-1","apa":"Diaconescu, D., Hoch, S., Heidtkamp, C., Meier, C., Reuter, D., & Wieck, A. D. (2000). A new peak in the bend resistance of a four-terminal device written by FIB implantation. Physica B: Condensed Matter, 284–288, 1906–1907. https://doi.org/10.1016/s0921-4526(99)03002-1"},"year":"2000","doi":"10.1016/s0921-4526(99)03002-1","_id":"7691","date_updated":"2022-01-06T07:03:44Z","date_created":"2019-02-13T14:56:34Z","status":"public","volume":"284-288","publication_status":"published","publication_identifier":{"issn":["0921-4526"]},"department":[{"_id":"15"}],"publication":"Physica B: Condensed Matter","publisher":"Elsevier BV","author":[{"last_name":"Diaconescu","full_name":"Diaconescu, Dorina","first_name":"Dorina"},{"last_name":"Hoch","first_name":"Sascha","full_name":"Hoch, Sascha"},{"first_name":"Christian","full_name":"Heidtkamp, Christian","last_name":"Heidtkamp"},{"last_name":"Meier","id":"20798","first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik"},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter"},{"last_name":"Wieck","first_name":"Andreas D","full_name":"Wieck, Andreas D"}],"user_id":"20798","title":"A new peak in the bend resistance of a four-terminal device written by FIB implantation","extern":"1"}