{"status":"public","publication_identifier":{"issn":["0021-8979","1089-7550"]},"citation":{"short":"S. Eshlaghi, C. Meier, D. Suter, D. Reuter, A.D. Wieck, Journal of Applied Physics 86 (1999) 6605–6607.","bibtex":"@article{Eshlaghi_Meier_Suter_Reuter_Wieck_1999, title={Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells}, volume={86}, DOI={<a href=\"https://doi.org/10.1063/1.371720\">10.1063/1.371720</a>}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Eshlaghi, Soheyla and Meier, Cedrik and Suter, Dieter and Reuter, D. and Wieck, A. D.}, year={1999}, pages={6605–6607} }","ieee":"S. Eshlaghi, C. Meier, D. Suter, D. Reuter, and A. D. Wieck, “Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells,” <i>Journal of Applied Physics</i>, vol. 86, no. 11, pp. 6605–6607, 1999.","chicago":"Eshlaghi, Soheyla, Cedrik Meier, Dieter Suter, D. Reuter, and A. D. Wieck. “Depth Profile of the Implantation-Enhanced Intermixing of Ga+ Focused Ion Beam in AlAs/GaAs Quantum Wells.” <i>Journal of Applied Physics</i> 86, no. 11 (1999): 6605–7. <a href=\"https://doi.org/10.1063/1.371720\">https://doi.org/10.1063/1.371720</a>.","mla":"Eshlaghi, Soheyla, et al. “Depth Profile of the Implantation-Enhanced Intermixing of Ga+ Focused Ion Beam in AlAs/GaAs Quantum Wells.” <i>Journal of Applied Physics</i>, vol. 86, no. 11, AIP Publishing, 1999, pp. 6605–07, doi:<a href=\"https://doi.org/10.1063/1.371720\">10.1063/1.371720</a>.","apa":"Eshlaghi, S., Meier, C., Suter, D., Reuter, D., &#38; Wieck, A. D. (1999). Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells. <i>Journal of Applied Physics</i>, <i>86</i>(11), 6605–6607. <a href=\"https://doi.org/10.1063/1.371720\">https://doi.org/10.1063/1.371720</a>","ama":"Eshlaghi S, Meier C, Suter D, Reuter D, Wieck AD. Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells. <i>Journal of Applied Physics</i>. 1999;86(11):6605-6607. doi:<a href=\"https://doi.org/10.1063/1.371720\">10.1063/1.371720</a>"},"intvolume":"        86","date_updated":"2022-01-06T07:03:44Z","extern":"1","publisher":"AIP Publishing","publication_status":"published","department":[{"_id":"15"}],"publication":"Journal of Applied Physics","issue":"11","language":[{"iso":"eng"}],"volume":86,"year":"1999","page":"6605-6607","user_id":"20798","author":[{"last_name":"Eshlaghi","full_name":"Eshlaghi, Soheyla","first_name":"Soheyla"},{"first_name":"Cedrik","id":"20798","full_name":"Meier, Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572"},{"last_name":"Suter","full_name":"Suter, Dieter","first_name":"Dieter"},{"last_name":"Reuter","full_name":"Reuter, D.","first_name":"D."},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."}],"title":"Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells","type":"journal_article","date_created":"2019-02-13T14:59:37Z","doi":"10.1063/1.371720","_id":"7693"}