{"user_id":"42514","citation":{"short":"T. Henksmeier, S. Shvarkov, A. Trapp, D. Reuter, Journal of Crystal Growth 512 (2019) 164–168.","mla":"Henksmeier, Tobias, et al. “Molecular Beam Epitaxy Growth and Temperature-Dependent Electrical Characterization of Carbon-Doped GaAs on GaAs(1 1 1)B.” Journal of Crystal Growth, vol. 512, Elsevier BV, 2019, pp. 164–68, doi:10.1016/j.jcrysgro.2019.02.006.","ieee":"T. Henksmeier, S. Shvarkov, A. Trapp, and D. Reuter, “Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B,” Journal of Crystal Growth, vol. 512, pp. 164–168, 2019.","chicago":"Henksmeier, Tobias, Stepan Shvarkov, Alexander Trapp, and Dirk Reuter. “Molecular Beam Epitaxy Growth and Temperature-Dependent Electrical Characterization of Carbon-Doped GaAs on GaAs(1 1 1)B.” Journal of Crystal Growth 512 (2019): 164–68. https://doi.org/10.1016/j.jcrysgro.2019.02.006.","apa":"Henksmeier, T., Shvarkov, S., Trapp, A., & Reuter, D. (2019). Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B. Journal of Crystal Growth, 512, 164–168. https://doi.org/10.1016/j.jcrysgro.2019.02.006","bibtex":"@article{Henksmeier_Shvarkov_Trapp_Reuter_2019, title={Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B}, volume={512}, DOI={10.1016/j.jcrysgro.2019.02.006}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Henksmeier, Tobias and Shvarkov, Stepan and Trapp, Alexander and Reuter, Dirk}, year={2019}, pages={164–168} }","ama":"Henksmeier T, Shvarkov S, Trapp A, Reuter D. Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B. Journal of Crystal Growth. 2019;512:164-168. doi:10.1016/j.jcrysgro.2019.02.006"},"year":"2019","publication_identifier":{"issn":["0022-0248"]},"publisher":"Elsevier BV","_id":"7800","title":"Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B","type":"journal_article","page":"164-168","volume":512,"department":[{"_id":"15"},{"_id":"230"}],"author":[{"full_name":"Henksmeier, Tobias","last_name":"Henksmeier","first_name":"Tobias"},{"full_name":"Shvarkov, Stepan","first_name":"Stepan","last_name":"Shvarkov"},{"full_name":"Trapp, Alexander","first_name":"Alexander","last_name":"Trapp"},{"id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter"}],"date_updated":"2022-01-06T07:03:46Z","language":[{"iso":"eng"}],"date_created":"2019-02-20T07:37:27Z","publication_status":"published","publication":"Journal of Crystal Growth","doi":"10.1016/j.jcrysgro.2019.02.006","intvolume":" 512","status":"public"}