{"language":[{"iso":"eng"}],"_id":"7800","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","status":"public","publication":"Journal of Crystal Growth","type":"journal_article","title":"Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B","doi":"10.1016/j.jcrysgro.2019.02.006","date_updated":"2022-01-06T07:03:46Z","publisher":"Elsevier BV","volume":512,"date_created":"2019-02-20T07:37:27Z","author":[{"full_name":"Henksmeier, Tobias","last_name":"Henksmeier","first_name":"Tobias"},{"last_name":"Shvarkov","full_name":"Shvarkov, Stepan","first_name":"Stepan"},{"last_name":"Trapp","full_name":"Trapp, Alexander","first_name":"Alexander"},{"first_name":"Dirk","last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk"}],"year":"2019","page":"164-168","intvolume":"       512","citation":{"ama":"Henksmeier T, Shvarkov S, Trapp A, Reuter D. Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B. <i>Journal of Crystal Growth</i>. 2019;512:164-168. doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2019.02.006\">10.1016/j.jcrysgro.2019.02.006</a>","ieee":"T. Henksmeier, S. Shvarkov, A. Trapp, and D. Reuter, “Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B,” <i>Journal of Crystal Growth</i>, vol. 512, pp. 164–168, 2019.","chicago":"Henksmeier, Tobias, Stepan Shvarkov, Alexander Trapp, and Dirk Reuter. “Molecular Beam Epitaxy Growth and Temperature-Dependent Electrical Characterization of Carbon-Doped GaAs on GaAs(1 1 1)B.” <i>Journal of Crystal Growth</i> 512 (2019): 164–68. <a href=\"https://doi.org/10.1016/j.jcrysgro.2019.02.006\">https://doi.org/10.1016/j.jcrysgro.2019.02.006</a>.","apa":"Henksmeier, T., Shvarkov, S., Trapp, A., &#38; Reuter, D. (2019). Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B. <i>Journal of Crystal Growth</i>, <i>512</i>, 164–168. <a href=\"https://doi.org/10.1016/j.jcrysgro.2019.02.006\">https://doi.org/10.1016/j.jcrysgro.2019.02.006</a>","short":"T. Henksmeier, S. Shvarkov, A. Trapp, D. Reuter, Journal of Crystal Growth 512 (2019) 164–168.","mla":"Henksmeier, Tobias, et al. “Molecular Beam Epitaxy Growth and Temperature-Dependent Electrical Characterization of Carbon-Doped GaAs on GaAs(1 1 1)B.” <i>Journal of Crystal Growth</i>, vol. 512, Elsevier BV, 2019, pp. 164–68, doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2019.02.006\">10.1016/j.jcrysgro.2019.02.006</a>.","bibtex":"@article{Henksmeier_Shvarkov_Trapp_Reuter_2019, title={Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B}, volume={512}, DOI={<a href=\"https://doi.org/10.1016/j.jcrysgro.2019.02.006\">10.1016/j.jcrysgro.2019.02.006</a>}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Henksmeier, Tobias and Shvarkov, Stepan and Trapp, Alexander and Reuter, Dirk}, year={2019}, pages={164–168} }"},"publication_identifier":{"issn":["0022-0248"]},"publication_status":"published"}