{"status":"public","year":"2007","author":[{"full_name":"Richter, Mirja","last_name":"Richter","first_name":"Mirja"},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"full_name":"Duboz, Jean-Yves","last_name":"Duboz","first_name":"Jean-Yves"},{"last_name":"Wieck","full_name":"Wieck, Andreas D.","first_name":"Andreas D."}],"publication_identifier":{"issn":["1386-9477"]},"department":[{"_id":"15"},{"_id":"230"}],"title":"Influence of In0.15Ga0.85As capping layers on the electron and hole energy levels of InAs quantum dots","_id":"8601","citation":{"chicago":"Richter, Mirja, Dirk Reuter, Jean-Yves Duboz, and Andreas D. Wieck. “Influence of In0.15Ga0.85As Capping Layers on the Electron and Hole Energy Levels of InAs Quantum Dots.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2007, 1891–93. <a href=\"https://doi.org/10.1016/j.physe.2007.08.091\">https://doi.org/10.1016/j.physe.2007.08.091</a>.","short":"M. Richter, D. Reuter, J.-Y. Duboz, A.D. Wieck, Physica E: Low-Dimensional Systems and Nanostructures (2007) 1891–1893.","bibtex":"@article{Richter_Reuter_Duboz_Wieck_2007, title={Influence of In0.15Ga0.85As capping layers on the electron and hole energy levels of InAs quantum dots}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2007.08.091\">10.1016/j.physe.2007.08.091</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Richter, Mirja and Reuter, Dirk and Duboz, Jean-Yves and Wieck, Andreas D.}, year={2007}, pages={1891–1893} }","apa":"Richter, M., Reuter, D., Duboz, J.-Y., &#38; Wieck, A. D. (2007). Influence of In0.15Ga0.85As capping layers on the electron and hole energy levels of InAs quantum dots. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 1891–1893. <a href=\"https://doi.org/10.1016/j.physe.2007.08.091\">https://doi.org/10.1016/j.physe.2007.08.091</a>","mla":"Richter, Mirja, et al. “Influence of In0.15Ga0.85As Capping Layers on the Electron and Hole Energy Levels of InAs Quantum Dots.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2007, pp. 1891–93, doi:<a href=\"https://doi.org/10.1016/j.physe.2007.08.091\">10.1016/j.physe.2007.08.091</a>.","ama":"Richter M, Reuter D, Duboz J-Y, Wieck AD. Influence of In0.15Ga0.85As capping layers on the electron and hole energy levels of InAs quantum dots. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2007:1891-1893. doi:<a href=\"https://doi.org/10.1016/j.physe.2007.08.091\">10.1016/j.physe.2007.08.091</a>","ieee":"M. Richter, D. Reuter, J.-Y. Duboz, and A. D. Wieck, “Influence of In0.15Ga0.85As capping layers on the electron and hole energy levels of InAs quantum dots,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 1891–1893, 2007."},"user_id":"42514","date_created":"2019-03-26T09:17:49Z","language":[{"iso":"eng"}],"publication_status":"published","doi":"10.1016/j.physe.2007.08.091","page":"1891-1893","publication":"Physica E: Low-dimensional Systems and Nanostructures","date_updated":"2022-01-06T07:03:57Z","type":"journal_article"}