[{"date_created":"2019-03-26T09:26:36Z","doi":"10.1063/1.2899968","type":"journal_article","title":"Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures","department":[{"_id":"15"},{"_id":"230"}],"publication":"Applied Physics Letters","author":[{"full_name":"Lo, F.-Y.","first_name":"F.-Y.","last_name":"Lo"},{"last_name":"Melnikov","first_name":"A.","full_name":"Melnikov, A."},{"full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter","first_name":"Dirk"},{"last_name":"Cordier","first_name":"Y.","full_name":"Cordier, Y."},{"full_name":"Wieck, A. D.","first_name":"A. D.","last_name":"Wieck"}],"user_id":"42514","publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","_id":"8603","year":"2008","language":[{"iso":"eng"}],"citation":{"mla":"Lo, F. Y., et al. “Magnetotransport in Gd-Implanted Wurtzite GaN∕AlxGa1−xN High Electron Mobility Transistor Structures.” <i>Applied Physics Letters</i>, 112111, 2008, doi:<a href=\"https://doi.org/10.1063/1.2899968\">10.1063/1.2899968</a>.","ieee":"F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, and A. D. Wieck, “Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures,” <i>Applied Physics Letters</i>, 2008.","short":"F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, A.D. Wieck, Applied Physics Letters (2008).","ama":"Lo F-Y, Melnikov A, Reuter D, Cordier Y, Wieck AD. Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures. <i>Applied Physics Letters</i>. 2008. doi:<a href=\"https://doi.org/10.1063/1.2899968\">10.1063/1.2899968</a>","chicago":"Lo, F.-Y., A. Melnikov, Dirk Reuter, Y. Cordier, and A. D. Wieck. “Magnetotransport in Gd-Implanted Wurtzite GaN∕AlxGa1−xN High Electron Mobility Transistor Structures.” <i>Applied Physics Letters</i>, 2008. <a href=\"https://doi.org/10.1063/1.2899968\">https://doi.org/10.1063/1.2899968</a>.","bibtex":"@article{Lo_Melnikov_Reuter_Cordier_Wieck_2008, title={Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures}, DOI={<a href=\"https://doi.org/10.1063/1.2899968\">10.1063/1.2899968</a>}, number={112111}, journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov, A. and Reuter, Dirk and Cordier, Y. and Wieck, A. D.}, year={2008} }","apa":"Lo, F.-Y., Melnikov, A., Reuter, D., Cordier, Y., &#38; Wieck, A. D. (2008). Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.2899968\">https://doi.org/10.1063/1.2899968</a>"},"date_updated":"2019-03-26T09:26:58Z","article_number":"112111","status":"public"}]