{"year":"2008","user_id":"42514","article_number":"112111","author":[{"first_name":"F.-Y.","full_name":"Lo, F.-Y.","last_name":"Lo"},{"full_name":"Melnikov, A.","last_name":"Melnikov","first_name":"A."},{"first_name":"Dirk","id":"37763","last_name":"Reuter","full_name":"Reuter, Dirk"},{"last_name":"Cordier","full_name":"Cordier, Y.","first_name":"Y."},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."}],"department":[{"_id":"15"},{"_id":"230"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","language":[{"iso":"eng"}],"_id":"8603","title":"Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures","date_updated":"2022-01-06T07:03:57Z","publication":"Applied Physics Letters","type":"journal_article","citation":{"short":"F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, A.D. Wieck, Applied Physics Letters (2008).","chicago":"Lo, F.-Y., A. Melnikov, Dirk Reuter, Y. Cordier, and A. D. Wieck. “Magnetotransport in Gd-Implanted Wurtzite GaN∕AlxGa1−xN High Electron Mobility Transistor Structures.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2899968.","apa":"Lo, F.-Y., Melnikov, A., Reuter, D., Cordier, Y., & Wieck, A. D. (2008). Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures. Applied Physics Letters. https://doi.org/10.1063/1.2899968","ieee":"F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, and A. D. Wieck, “Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures,” Applied Physics Letters, 2008.","bibtex":"@article{Lo_Melnikov_Reuter_Cordier_Wieck_2008, title={Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures}, DOI={10.1063/1.2899968}, number={112111}, journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov, A. and Reuter, Dirk and Cordier, Y. and Wieck, A. D.}, year={2008} }","mla":"Lo, F. Y., et al. “Magnetotransport in Gd-Implanted Wurtzite GaN∕AlxGa1−xN High Electron Mobility Transistor Structures.” Applied Physics Letters, 112111, 2008, doi:10.1063/1.2899968.","ama":"Lo F-Y, Melnikov A, Reuter D, Cordier Y, Wieck AD. Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures. Applied Physics Letters. 2008. doi:10.1063/1.2899968"},"doi":"10.1063/1.2899968","date_created":"2019-03-26T09:26:36Z","status":"public"}