{"language":[{"iso":"eng"}],"doi":"10.1063/1.2899968","publication_status":"published","department":[{"_id":"15"},{"_id":"230"}],"status":"public","author":[{"last_name":"Lo","full_name":"Lo, F.-Y.","first_name":"F.-Y."},{"first_name":"A.","last_name":"Melnikov","full_name":"Melnikov, A."},{"id":"37763","first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter"},{"full_name":"Cordier, Y.","last_name":"Cordier","first_name":"Y."},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."}],"type":"journal_article","publication_identifier":{"issn":["0003-6951","1077-3118"]},"date_updated":"2022-01-06T07:03:57Z","date_created":"2019-03-26T09:26:36Z","year":"2008","title":"Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures","citation":{"short":"F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, A.D. Wieck, Applied Physics Letters (2008).","apa":"Lo, F.-Y., Melnikov, A., Reuter, D., Cordier, Y., &#38; Wieck, A. D. (2008). Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.2899968\">https://doi.org/10.1063/1.2899968</a>","chicago":"Lo, F.-Y., A. Melnikov, Dirk Reuter, Y. Cordier, and A. D. Wieck. “Magnetotransport in Gd-Implanted Wurtzite GaN∕AlxGa1−xN High Electron Mobility Transistor Structures.” <i>Applied Physics Letters</i>, 2008. <a href=\"https://doi.org/10.1063/1.2899968\">https://doi.org/10.1063/1.2899968</a>.","ama":"Lo F-Y, Melnikov A, Reuter D, Cordier Y, Wieck AD. Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures. <i>Applied Physics Letters</i>. 2008. doi:<a href=\"https://doi.org/10.1063/1.2899968\">10.1063/1.2899968</a>","ieee":"F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, and A. D. Wieck, “Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures,” <i>Applied Physics Letters</i>, 2008.","mla":"Lo, F. Y., et al. “Magnetotransport in Gd-Implanted Wurtzite GaN∕AlxGa1−xN High Electron Mobility Transistor Structures.” <i>Applied Physics Letters</i>, 112111, 2008, doi:<a href=\"https://doi.org/10.1063/1.2899968\">10.1063/1.2899968</a>.","bibtex":"@article{Lo_Melnikov_Reuter_Cordier_Wieck_2008, title={Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures}, DOI={<a href=\"https://doi.org/10.1063/1.2899968\">10.1063/1.2899968</a>}, number={112111}, journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov, A. and Reuter, Dirk and Cordier, Y. and Wieck, A. D.}, year={2008} }"},"_id":"8603","user_id":"42514","publication":"Applied Physics Letters","article_number":"112111"}