{"doi":"10.1103/physrevb.75.245302","date_created":"2019-03-26T10:19:30Z","status":"public","publication_status":"published","department":[{"_id":"15"},{"_id":"230"}],"publication_identifier":{"issn":["1098-0121","1550-235X"]},"author":[{"last_name":"Yugova","full_name":"Yugova, I. A.","first_name":"I. A."},{"full_name":"Greilich, A.","last_name":"Greilich","first_name":"A."},{"first_name":"D. R.","full_name":"Yakovlev, D. R.","last_name":"Yakovlev"},{"last_name":"Kiselev","full_name":"Kiselev, A. A.","first_name":"A. A."},{"first_name":"M.","full_name":"Bayer, M.","last_name":"Bayer"},{"first_name":"V. V.","last_name":"Petrov","full_name":"Petrov, V. V."},{"last_name":"Dolgikh","full_name":"Dolgikh, Yu. K.","first_name":"Yu. K."},{"last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763","first_name":"Dirk"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."}],"year":"2007","user_id":"42514","citation":{"ama":"Yugova IA, Greilich A, Yakovlev DR, et al. Universal behavior of the electrongfactor inGaAs∕AlxGa1−xAsquantum wells. <i>Physical Review B</i>. 2007. doi:<a href=\"https://doi.org/10.1103/physrevb.75.245302\">10.1103/physrevb.75.245302</a>","mla":"Yugova, I. A., et al. “Universal Behavior of the Electrongfactor InGaAs∕AlxGa1−xAsquantum Wells.” <i>Physical Review B</i>, 2007, doi:<a href=\"https://doi.org/10.1103/physrevb.75.245302\">10.1103/physrevb.75.245302</a>.","bibtex":"@article{Yugova_Greilich_Yakovlev_Kiselev_Bayer_Petrov_Dolgikh_Reuter_Wieck_2007, title={Universal behavior of the electrongfactor inGaAs∕AlxGa1−xAsquantum wells}, DOI={<a href=\"https://doi.org/10.1103/physrevb.75.245302\">10.1103/physrevb.75.245302</a>}, journal={Physical Review B}, author={Yugova, I. A. and Greilich, A. and Yakovlev, D. R. and Kiselev, A. A. and Bayer, M. and Petrov, V. V. and Dolgikh, Yu. K. and Reuter, Dirk and Wieck, A. D.}, year={2007} }","apa":"Yugova, I. A., Greilich, A., Yakovlev, D. R., Kiselev, A. A., Bayer, M., Petrov, V. V., … Wieck, A. D. (2007). Universal behavior of the electrongfactor inGaAs∕AlxGa1−xAsquantum wells. <i>Physical Review B</i>. <a href=\"https://doi.org/10.1103/physrevb.75.245302\">https://doi.org/10.1103/physrevb.75.245302</a>","chicago":"Yugova, I. A., A. Greilich, D. R. Yakovlev, A. A. Kiselev, M. Bayer, V. V. Petrov, Yu. K. Dolgikh, Dirk Reuter, and A. D. Wieck. “Universal Behavior of the Electrongfactor InGaAs∕AlxGa1−xAsquantum Wells.” <i>Physical Review B</i>, 2007. <a href=\"https://doi.org/10.1103/physrevb.75.245302\">https://doi.org/10.1103/physrevb.75.245302</a>.","short":"I.A. Yugova, A. Greilich, D.R. Yakovlev, A.A. Kiselev, M. Bayer, V.V. Petrov, Y.K. Dolgikh, D. Reuter, A.D. Wieck, Physical Review B (2007).","ieee":"I. A. Yugova <i>et al.</i>, “Universal behavior of the electrongfactor inGaAs∕AlxGa1−xAsquantum wells,” <i>Physical Review B</i>, 2007."},"type":"journal_article","date_updated":"2022-01-06T07:03:57Z","publication":"Physical Review B","_id":"8628","language":[{"iso":"eng"}],"title":"Universal behavior of the electrongfactor inGaAs∕AlxGa1−xAsquantum wells"}