--- _id: '8664' author: - first_name: J.L. full_name: Yang, J.L. last_name: Yang - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A.D. full_name: Wieck, A.D. last_name: Wieck citation: ama: Yang JL, Reuter D, Wieck AD. Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100). Journal of Crystal Growth. 2006:278-284. doi:10.1016/j.jcrysgro.2006.05.051 apa: Yang, J. L., Reuter, D., & Wieck, A. D. (2006). Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100). Journal of Crystal Growth, 278–284. https://doi.org/10.1016/j.jcrysgro.2006.05.051 bibtex: '@article{Yang_Reuter_Wieck_2006, title={Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100)}, DOI={10.1016/j.jcrysgro.2006.05.051}, journal={Journal of Crystal Growth}, author={Yang, J.L. and Reuter, Dirk and Wieck, A.D.}, year={2006}, pages={278–284} }' chicago: Yang, J.L., Dirk Reuter, and A.D. Wieck. “Sticking Behavior of the Dopants Si, C, and Be upon Re-Evaporation of Individually Doped GaAs(100).” Journal of Crystal Growth, 2006, 278–84. https://doi.org/10.1016/j.jcrysgro.2006.05.051. ieee: J. L. Yang, D. Reuter, and A. D. Wieck, “Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100),” Journal of Crystal Growth, pp. 278–284, 2006. mla: Yang, J. L., et al. “Sticking Behavior of the Dopants Si, C, and Be upon Re-Evaporation of Individually Doped GaAs(100).” Journal of Crystal Growth, 2006, pp. 278–84, doi:10.1016/j.jcrysgro.2006.05.051. short: J.L. Yang, D. Reuter, A.D. Wieck, Journal of Crystal Growth (2006) 278–284. date_created: 2019-03-27T08:39:18Z date_updated: 2022-01-06T07:03:58Z department: - _id: '15' - _id: '230' doi: 10.1016/j.jcrysgro.2006.05.051 language: - iso: eng page: 278-284 publication: Journal of Crystal Growth publication_identifier: issn: - 0022-0248 publication_status: published status: public title: Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100) type: journal_article user_id: '42514' year: '2006' ...