---
_id: '8664'
author:
- first_name: J.L.
full_name: Yang, J.L.
last_name: Yang
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A.D.
full_name: Wieck, A.D.
last_name: Wieck
citation:
ama: Yang JL, Reuter D, Wieck AD. Sticking behavior of the dopants Si, C, and Be
upon re-evaporation of individually doped GaAs(100). Journal of Crystal Growth.
2006:278-284. doi:10.1016/j.jcrysgro.2006.05.051
apa: Yang, J. L., Reuter, D., & Wieck, A. D. (2006). Sticking behavior of the
dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100). Journal
of Crystal Growth, 278–284. https://doi.org/10.1016/j.jcrysgro.2006.05.051
bibtex: '@article{Yang_Reuter_Wieck_2006, title={Sticking behavior of the dopants
Si, C, and Be upon re-evaporation of individually doped GaAs(100)}, DOI={10.1016/j.jcrysgro.2006.05.051},
journal={Journal of Crystal Growth}, author={Yang, J.L. and Reuter, Dirk and Wieck,
A.D.}, year={2006}, pages={278–284} }'
chicago: Yang, J.L., Dirk Reuter, and A.D. Wieck. “Sticking Behavior of the Dopants
Si, C, and Be upon Re-Evaporation of Individually Doped GaAs(100).” Journal
of Crystal Growth, 2006, 278–84. https://doi.org/10.1016/j.jcrysgro.2006.05.051.
ieee: J. L. Yang, D. Reuter, and A. D. Wieck, “Sticking behavior of the dopants
Si, C, and Be upon re-evaporation of individually doped GaAs(100),” Journal
of Crystal Growth, pp. 278–284, 2006.
mla: Yang, J. L., et al. “Sticking Behavior of the Dopants Si, C, and Be upon Re-Evaporation
of Individually Doped GaAs(100).” Journal of Crystal Growth, 2006, pp.
278–84, doi:10.1016/j.jcrysgro.2006.05.051.
short: J.L. Yang, D. Reuter, A.D. Wieck, Journal of Crystal Growth (2006) 278–284.
date_created: 2019-03-27T08:39:18Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.jcrysgro.2006.05.051
language:
- iso: eng
page: 278-284
publication: Journal of Crystal Growth
publication_identifier:
issn:
- 0022-0248
publication_status: published
status: public
title: Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually
doped GaAs(100)
type: journal_article
user_id: '42514'
year: '2006'
...