{"publication_status":"published","publication_identifier":{"issn":["0268-1242","1361-6641"]},"year":"2004","citation":{"ama":"Kähler D, Knop M, Kunze U, Reuter D, Wieck AD. Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation. <i>Semiconductor Science and Technology</i>. 2004:140-143. doi:<a href=\"https://doi.org/10.1088/0268-1242/20/2/006\">10.1088/0268-1242/20/2/006</a>","ieee":"D. Kähler, M. Knop, U. Kunze, D. Reuter, and A. D. Wieck, “Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation,” <i>Semiconductor Science and Technology</i>, pp. 140–143, 2004.","chicago":"Kähler, D, M Knop, U Kunze, Dirk Reuter, and A D Wieck. “Dual-Gate GaAs/AlGaAs Quantum Point Contact with Tuneable Subband Energy Separation.” <i>Semiconductor Science and Technology</i>, 2004, 140–43. <a href=\"https://doi.org/10.1088/0268-1242/20/2/006\">https://doi.org/10.1088/0268-1242/20/2/006</a>.","apa":"Kähler, D., Knop, M., Kunze, U., Reuter, D., &#38; Wieck, A. D. (2004). Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation. <i>Semiconductor Science and Technology</i>, 140–143. <a href=\"https://doi.org/10.1088/0268-1242/20/2/006\">https://doi.org/10.1088/0268-1242/20/2/006</a>","bibtex":"@article{Kähler_Knop_Kunze_Reuter_Wieck_2004, title={Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation}, DOI={<a href=\"https://doi.org/10.1088/0268-1242/20/2/006\">10.1088/0268-1242/20/2/006</a>}, journal={Semiconductor Science and Technology}, author={Kähler, D and Knop, M and Kunze, U and Reuter, Dirk and Wieck, A D}, year={2004}, pages={140–143} }","mla":"Kähler, D., et al. “Dual-Gate GaAs/AlGaAs Quantum Point Contact with Tuneable Subband Energy Separation.” <i>Semiconductor Science and Technology</i>, 2004, pp. 140–43, doi:<a href=\"https://doi.org/10.1088/0268-1242/20/2/006\">10.1088/0268-1242/20/2/006</a>.","short":"D. Kähler, M. Knop, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2004) 140–143."},"page":"140-143","date_updated":"2022-01-06T07:03:59Z","date_created":"2019-03-27T11:15:10Z","author":[{"first_name":"D","last_name":"Kähler","full_name":"Kähler, D"},{"first_name":"M","full_name":"Knop, M","last_name":"Knop"},{"last_name":"Kunze","full_name":"Kunze, U","first_name":"U"},{"first_name":"Dirk","id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter"},{"first_name":"A D","full_name":"Wieck, A D","last_name":"Wieck"}],"title":"Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation","doi":"10.1088/0268-1242/20/2/006","type":"journal_article","publication":"Semiconductor Science and Technology","status":"public","_id":"8692","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"language":[{"iso":"eng"}]}