{"status":"public","_id":"8692","publication_status":"published","date_created":"2019-03-27T11:15:10Z","doi":"10.1088/0268-1242/20/2/006","publication_identifier":{"issn":["0268-1242","1361-6641"]},"user_id":"42514","author":[{"full_name":"Kähler, D","last_name":"Kähler","first_name":"D"},{"first_name":"M","last_name":"Knop","full_name":"Knop, M"},{"full_name":"Kunze, U","last_name":"Kunze","first_name":"U"},{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"full_name":"Wieck, A D","last_name":"Wieck","first_name":"A D"}],"year":"2004","citation":{"chicago":"Kähler, D, M Knop, U Kunze, Dirk Reuter, and A D Wieck. “Dual-Gate GaAs/AlGaAs Quantum Point Contact with Tuneable Subband Energy Separation.” Semiconductor Science and Technology, 2004, 140–43. https://doi.org/10.1088/0268-1242/20/2/006.","mla":"Kähler, D., et al. “Dual-Gate GaAs/AlGaAs Quantum Point Contact with Tuneable Subband Energy Separation.” Semiconductor Science and Technology, 2004, pp. 140–43, doi:10.1088/0268-1242/20/2/006.","apa":"Kähler, D., Knop, M., Kunze, U., Reuter, D., & Wieck, A. D. (2004). Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation. Semiconductor Science and Technology, 140–143. https://doi.org/10.1088/0268-1242/20/2/006","short":"D. Kähler, M. Knop, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2004) 140–143.","ieee":"D. Kähler, M. Knop, U. Kunze, D. Reuter, and A. D. Wieck, “Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation,” Semiconductor Science and Technology, pp. 140–143, 2004.","bibtex":"@article{Kähler_Knop_Kunze_Reuter_Wieck_2004, title={Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation}, DOI={10.1088/0268-1242/20/2/006}, journal={Semiconductor Science and Technology}, author={Kähler, D and Knop, M and Kunze, U and Reuter, Dirk and Wieck, A D}, year={2004}, pages={140–143} }","ama":"Kähler D, Knop M, Kunze U, Reuter D, Wieck AD. Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation. Semiconductor Science and Technology. 2004:140-143. doi:10.1088/0268-1242/20/2/006"},"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"page":"140-143","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:59Z","title":"Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation","publication":"Semiconductor Science and Technology"}