{"user_id":"42514","language":[{"iso":"eng"}],"publication_identifier":{"issn":["0268-1242","1361-6641"]},"type":"journal_article","_id":"8693","title":"Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene","department":[{"_id":"15"},{"_id":"230"}],"publication_status":"published","publication":"Semiconductor Science and Technology","status":"public","year":"2005","doi":"10.1088/0268-1242/20/8/031","date_updated":"2022-01-06T07:03:59Z","author":[{"last_name":"Knop","first_name":"M","full_name":"Knop, M"},{"full_name":"Richter, M","first_name":"M","last_name":"Richter"},{"last_name":"Maßmann","full_name":"Maßmann, R","first_name":"R"},{"first_name":"U","full_name":"Wieser, U","last_name":"Wieser"},{"last_name":"Kunze","first_name":"U","full_name":"Kunze, U"},{"id":"37763","first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter"},{"last_name":"Riedesel","first_name":"C","full_name":"Riedesel, C"},{"full_name":"Wieck, A D","first_name":"A D","last_name":"Wieck"}],"citation":{"ama":"Knop M, Richter M, Maßmann R, et al. Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene. <i>Semiconductor Science and Technology</i>. 2005:814-818. doi:<a href=\"https://doi.org/10.1088/0268-1242/20/8/031\">10.1088/0268-1242/20/8/031</a>","bibtex":"@article{Knop_Richter_Maßmann_Wieser_Kunze_Reuter_Riedesel_Wieck_2005, title={Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene}, DOI={<a href=\"https://doi.org/10.1088/0268-1242/20/8/031\">10.1088/0268-1242/20/8/031</a>}, journal={Semiconductor Science and Technology}, author={Knop, M and Richter, M and Maßmann, R and Wieser, U and Kunze, U and Reuter, Dirk and Riedesel, C and Wieck, A D}, year={2005}, pages={814–818} }","short":"M. Knop, M. Richter, R. Maßmann, U. Wieser, U. Kunze, D. Reuter, C. Riedesel, A.D. Wieck, Semiconductor Science and Technology (2005) 814–818.","mla":"Knop, M., et al. “Preparation of Electron Waveguide Devices on GaAs/AlGaAs Using Negative-Tone Resist Calixarene.” <i>Semiconductor Science and Technology</i>, 2005, pp. 814–18, doi:<a href=\"https://doi.org/10.1088/0268-1242/20/8/031\">10.1088/0268-1242/20/8/031</a>.","apa":"Knop, M., Richter, M., Maßmann, R., Wieser, U., Kunze, U., Reuter, D., … Wieck, A. D. (2005). Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene. <i>Semiconductor Science and Technology</i>, 814–818. <a href=\"https://doi.org/10.1088/0268-1242/20/8/031\">https://doi.org/10.1088/0268-1242/20/8/031</a>","ieee":"M. Knop <i>et al.</i>, “Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene,” <i>Semiconductor Science and Technology</i>, pp. 814–818, 2005.","chicago":"Knop, M, M Richter, R Maßmann, U Wieser, U Kunze, Dirk Reuter, C Riedesel, and A D Wieck. “Preparation of Electron Waveguide Devices on GaAs/AlGaAs Using Negative-Tone Resist Calixarene.” <i>Semiconductor Science and Technology</i>, 2005, 814–18. <a href=\"https://doi.org/10.1088/0268-1242/20/8/031\">https://doi.org/10.1088/0268-1242/20/8/031</a>."},"date_created":"2019-03-27T11:16:26Z","page":"814-818"}