{"language":[{"iso":"eng"}],"publication_status":"published","doi":"10.1016/j.physe.2003.11.141","date_updated":"2022-01-06T07:03:59Z","type":"journal_article","publication":"Physica E: Low-dimensional Systems and Nanostructures","page":"872-875","year":"2004","status":"public","author":[{"full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763","first_name":"Dirk"},{"first_name":"A","last_name":"Seekamp","full_name":"Seekamp, A"},{"full_name":"Wieck, A.D","last_name":"Wieck","first_name":"A.D"}],"title":"Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure","_id":"8699","department":[{"_id":"15"},{"_id":"230"}],"publication_identifier":{"issn":["1386-9477"]},"date_created":"2019-03-27T11:48:36Z","user_id":"42514","citation":{"short":"D. Reuter, A. Seekamp, A.. Wieck, Physica E: Low-Dimensional Systems and Nanostructures (2004) 872–875.","chicago":"Reuter, Dirk, A Seekamp, and A.D Wieck. “Fabrication of Two-Dimensional n- and p-Type in-Plane Gate Transistors from the Same p-Doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As Heterostructure.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, 872–75. <a href=\"https://doi.org/10.1016/j.physe.2003.11.141\">https://doi.org/10.1016/j.physe.2003.11.141</a>.","bibtex":"@article{Reuter_Seekamp_Wieck_2004, title={Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2003.11.141\">10.1016/j.physe.2003.11.141</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Reuter, Dirk and Seekamp, A and Wieck, A.D}, year={2004}, pages={872–875} }","apa":"Reuter, D., Seekamp, A., &#38; Wieck, A. . (2004). Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 872–875. <a href=\"https://doi.org/10.1016/j.physe.2003.11.141\">https://doi.org/10.1016/j.physe.2003.11.141</a>","mla":"Reuter, Dirk, et al. “Fabrication of Two-Dimensional n- and p-Type in-Plane Gate Transistors from the Same p-Doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As Heterostructure.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, pp. 872–75, doi:<a href=\"https://doi.org/10.1016/j.physe.2003.11.141\">10.1016/j.physe.2003.11.141</a>.","ama":"Reuter D, Seekamp A, Wieck A. Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2004:872-875. doi:<a href=\"https://doi.org/10.1016/j.physe.2003.11.141\">10.1016/j.physe.2003.11.141</a>","ieee":"D. Reuter, A. Seekamp, and A. . Wieck, “Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 872–875, 2004."}}