--- _id: '8701' author: - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: C. full_name: Werner, C. last_name: Werner - first_name: C. full_name: Riedesel, C. last_name: Riedesel - first_name: A.D. full_name: Wieck, A.D. last_name: Wieck - first_name: D. full_name: Schuster, D. last_name: Schuster - first_name: W. full_name: Hansen, W. last_name: Hansen citation: ama: 'Reuter D, Werner C, Riedesel C, Wieck AD, Schuster D, Hansen W. Fabrication of two-dimensional p–n junctions formed by compensation doping of p-modulation doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures. Physica E: Low-dimensional Systems and Nanostructures. 2004:725-728. doi:10.1016/j.physe.2003.12.109' apa: 'Reuter, D., Werner, C., Riedesel, C., Wieck, A. D., Schuster, D., & Hansen, W. (2004). Fabrication of two-dimensional p–n junctions formed by compensation doping of p-modulation doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures. Physica E: Low-Dimensional Systems and Nanostructures, 725–728. https://doi.org/10.1016/j.physe.2003.12.109' bibtex: '@article{Reuter_Werner_Riedesel_Wieck_Schuster_Hansen_2004, title={Fabrication of two-dimensional p–n junctions formed by compensation doping of p-modulation doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures}, DOI={10.1016/j.physe.2003.12.109}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Reuter, Dirk and Werner, C. and Riedesel, C. and Wieck, A.D. and Schuster, D. and Hansen, W.}, year={2004}, pages={725–728} }' chicago: 'Reuter, Dirk, C. Werner, C. Riedesel, A.D. Wieck, D. Schuster, and W. Hansen. “Fabrication of Two-Dimensional p–n Junctions Formed by Compensation Doping of p-Modulation Doped GaAs/InyGa1−yAs/AlxGa1−x As Heterostructures.” Physica E: Low-Dimensional Systems and Nanostructures, 2004, 725–28. https://doi.org/10.1016/j.physe.2003.12.109.' ieee: 'D. Reuter, C. Werner, C. Riedesel, A. D. Wieck, D. Schuster, and W. Hansen, “Fabrication of two-dimensional p–n junctions formed by compensation doping of p-modulation doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures,” Physica E: Low-dimensional Systems and Nanostructures, pp. 725–728, 2004.' mla: 'Reuter, Dirk, et al. “Fabrication of Two-Dimensional p–n Junctions Formed by Compensation Doping of p-Modulation Doped GaAs/InyGa1−yAs/AlxGa1−x As Heterostructures.” Physica E: Low-Dimensional Systems and Nanostructures, 2004, pp. 725–28, doi:10.1016/j.physe.2003.12.109.' short: 'D. Reuter, C. Werner, C. Riedesel, A.D. Wieck, D. Schuster, W. Hansen, Physica E: Low-Dimensional Systems and Nanostructures (2004) 725–728.' date_created: 2019-03-27T11:55:18Z date_updated: 2022-01-06T07:03:59Z department: - _id: '15' - _id: '230' doi: 10.1016/j.physe.2003.12.109 language: - iso: eng page: 725-728 publication: 'Physica E: Low-dimensional Systems and Nanostructures' publication_identifier: issn: - 1386-9477 publication_status: published status: public title: Fabrication of two-dimensional p–n junctions formed by compensation doping of p-modulation doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures type: journal_article user_id: '42514' year: '2004' ...