---
_id: '8701'
author:
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: C.
full_name: Werner, C.
last_name: Werner
- first_name: C.
full_name: Riedesel, C.
last_name: Riedesel
- first_name: A.D.
full_name: Wieck, A.D.
last_name: Wieck
- first_name: D.
full_name: Schuster, D.
last_name: Schuster
- first_name: W.
full_name: Hansen, W.
last_name: Hansen
citation:
ama: 'Reuter D, Werner C, Riedesel C, Wieck AD, Schuster D, Hansen W. Fabrication
of two-dimensional p–n junctions formed by compensation doping of p-modulation
doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures. Physica E: Low-dimensional
Systems and Nanostructures. 2004:725-728. doi:10.1016/j.physe.2003.12.109'
apa: 'Reuter, D., Werner, C., Riedesel, C., Wieck, A. D., Schuster, D., & Hansen,
W. (2004). Fabrication of two-dimensional p–n junctions formed by compensation
doping of p-modulation doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures. Physica
E: Low-Dimensional Systems and Nanostructures, 725–728. https://doi.org/10.1016/j.physe.2003.12.109'
bibtex: '@article{Reuter_Werner_Riedesel_Wieck_Schuster_Hansen_2004, title={Fabrication
of two-dimensional p–n junctions formed by compensation doping of p-modulation
doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures}, DOI={10.1016/j.physe.2003.12.109},
journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Reuter,
Dirk and Werner, C. and Riedesel, C. and Wieck, A.D. and Schuster, D. and Hansen,
W.}, year={2004}, pages={725–728} }'
chicago: 'Reuter, Dirk, C. Werner, C. Riedesel, A.D. Wieck, D. Schuster, and W.
Hansen. “Fabrication of Two-Dimensional p–n Junctions Formed by Compensation Doping
of p-Modulation Doped GaAs/InyGa1−yAs/AlxGa1−x As Heterostructures.” Physica
E: Low-Dimensional Systems and Nanostructures, 2004, 725–28. https://doi.org/10.1016/j.physe.2003.12.109.'
ieee: 'D. Reuter, C. Werner, C. Riedesel, A. D. Wieck, D. Schuster, and W. Hansen,
“Fabrication of two-dimensional p–n junctions formed by compensation doping of
p-modulation doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures,” Physica E:
Low-dimensional Systems and Nanostructures, pp. 725–728, 2004.'
mla: 'Reuter, Dirk, et al. “Fabrication of Two-Dimensional p–n Junctions Formed
by Compensation Doping of p-Modulation Doped GaAs/InyGa1−yAs/AlxGa1−x As Heterostructures.”
Physica E: Low-Dimensional Systems and Nanostructures, 2004, pp. 725–28,
doi:10.1016/j.physe.2003.12.109.'
short: 'D. Reuter, C. Werner, C. Riedesel, A.D. Wieck, D. Schuster, W. Hansen, Physica
E: Low-Dimensional Systems and Nanostructures (2004) 725–728.'
date_created: 2019-03-27T11:55:18Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/j.physe.2003.12.109
language:
- iso: eng
page: 725-728
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
issn:
- 1386-9477
publication_status: published
status: public
title: Fabrication of two-dimensional p–n junctions formed by compensation doping
of p-modulation doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures
type: journal_article
user_id: '42514'
year: '2004'
...