{"publication_status":"published","department":[{"_id":"15"},{"_id":"230"}],"publication_identifier":{"issn":["0921-4526"]},"author":[{"last_name":"Bryja","full_name":"Bryja, L.","first_name":"L."},{"first_name":"M.","last_name":"Kubisa","full_name":"Kubisa, M."},{"first_name":"K.","full_name":"Ryczko, K.","last_name":"Ryczko"},{"full_name":"Misiewicz, J.","last_name":"Misiewicz","first_name":"J."},{"first_name":"R.","full_name":"Stȩpniewski, R.","last_name":"Stȩpniewski"},{"full_name":"Byszewski, M.","last_name":"Byszewski","first_name":"M."},{"first_name":"M.","last_name":"Potemski","full_name":"Potemski, M."},{"last_name":"Reuter","full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763"},{"first_name":"A.","full_name":"Wieck, A.","last_name":"Wieck"}],"year":"2004","user_id":"42514","citation":{"ieee":"L. Bryja <i>et al.</i>, “Magnetic-field-induced excitons in photoluminescence from heavily doped p-type Ga1−xAlxAs/GaAs single heterojunction,” <i>Physica B: Condensed Matter</i>, pp. 442–445, 2004.","short":"L. Bryja, M. Kubisa, K. Ryczko, J. Misiewicz, R. Stȩpniewski, M. Byszewski, M. Potemski, D. Reuter, A. Wieck, Physica B: Condensed Matter (2004) 442–445.","ama":"Bryja L, Kubisa M, Ryczko K, et al. Magnetic-field-induced excitons in photoluminescence from heavily doped p-type Ga1−xAlxAs/GaAs single heterojunction. <i>Physica B: Condensed Matter</i>. 2004:442-445. doi:<a href=\"https://doi.org/10.1016/j.physb.2004.01.123\">10.1016/j.physb.2004.01.123</a>","apa":"Bryja, L., Kubisa, M., Ryczko, K., Misiewicz, J., Stȩpniewski, R., Byszewski, M., … Wieck, A. (2004). Magnetic-field-induced excitons in photoluminescence from heavily doped p-type Ga1−xAlxAs/GaAs single heterojunction. <i>Physica B: Condensed Matter</i>, 442–445. <a href=\"https://doi.org/10.1016/j.physb.2004.01.123\">https://doi.org/10.1016/j.physb.2004.01.123</a>","chicago":"Bryja, L., M. Kubisa, K. Ryczko, J. Misiewicz, R. Stȩpniewski, M. Byszewski, M. Potemski, Dirk Reuter, and A. Wieck. “Magnetic-Field-Induced Excitons in Photoluminescence from Heavily Doped p-Type Ga1−xAlxAs/GaAs Single Heterojunction.” <i>Physica B: Condensed Matter</i>, 2004, 442–45. <a href=\"https://doi.org/10.1016/j.physb.2004.01.123\">https://doi.org/10.1016/j.physb.2004.01.123</a>.","bibtex":"@article{Bryja_Kubisa_Ryczko_Misiewicz_Stȩpniewski_Byszewski_Potemski_Reuter_Wieck_2004, title={Magnetic-field-induced excitons in photoluminescence from heavily doped p-type Ga1−xAlxAs/GaAs single heterojunction}, DOI={<a href=\"https://doi.org/10.1016/j.physb.2004.01.123\">10.1016/j.physb.2004.01.123</a>}, journal={Physica B: Condensed Matter}, author={Bryja, L. and Kubisa, M. and Ryczko, K. and Misiewicz, J. and Stȩpniewski, R. and Byszewski, M. and Potemski, M. and Reuter, Dirk and Wieck, A.}, year={2004}, pages={442–445} }","mla":"Bryja, L., et al. “Magnetic-Field-Induced Excitons in Photoluminescence from Heavily Doped p-Type Ga1−xAlxAs/GaAs Single Heterojunction.” <i>Physica B: Condensed Matter</i>, 2004, pp. 442–45, doi:<a href=\"https://doi.org/10.1016/j.physb.2004.01.123\">10.1016/j.physb.2004.01.123</a>."},"type":"journal_article","date_updated":"2022-01-06T07:03:59Z","publication":"Physica B: Condensed Matter","page":"442-445","language":[{"iso":"eng"}],"_id":"8712","title":"Magnetic-field-induced excitons in photoluminescence from heavily doped p-type Ga1−xAlxAs/GaAs single heterojunction","doi":"10.1016/j.physb.2004.01.123","date_created":"2019-03-27T12:22:04Z","status":"public"}