{"page":"381-388","type":"journal_article","doi":"10.1016/j.spmi.2004.02.012","status":"public","date_created":"2019-03-28T15:06:19Z","publication_status":"published","date_updated":"2022-01-06T07:03:59Z","publication_identifier":{"issn":["0749-6036"]},"citation":{"chicago":"Ebbers, A., Dirk Reuter, M. Heuken, and A.D. Wieck. “In-Plane Gate Transistors in AlxGa1−xN/GaN Heterostructures Written by Focused Ion Beams.” <i>Superlattices and Microstructures</i>, 2004, 381–88. <a href=\"https://doi.org/10.1016/j.spmi.2004.02.012\">https://doi.org/10.1016/j.spmi.2004.02.012</a>.","mla":"Ebbers, A., et al. “In-Plane Gate Transistors in AlxGa1−xN/GaN Heterostructures Written by Focused Ion Beams.” <i>Superlattices and Microstructures</i>, 2004, pp. 381–88, doi:<a href=\"https://doi.org/10.1016/j.spmi.2004.02.012\">10.1016/j.spmi.2004.02.012</a>.","apa":"Ebbers, A., Reuter, D., Heuken, M., &#38; Wieck, A. D. (2004). In-plane gate transistors in AlxGa1−xN/GaN heterostructures written by focused ion beams. <i>Superlattices and Microstructures</i>, 381–388. <a href=\"https://doi.org/10.1016/j.spmi.2004.02.012\">https://doi.org/10.1016/j.spmi.2004.02.012</a>","bibtex":"@article{Ebbers_Reuter_Heuken_Wieck_2004, title={In-plane gate transistors in AlxGa1−xN/GaN heterostructures written by focused ion beams}, DOI={<a href=\"https://doi.org/10.1016/j.spmi.2004.02.012\">10.1016/j.spmi.2004.02.012</a>}, journal={Superlattices and Microstructures}, author={Ebbers, A. and Reuter, Dirk and Heuken, M. and Wieck, A.D.}, year={2004}, pages={381–388} }","ieee":"A. Ebbers, D. Reuter, M. Heuken, and A. D. Wieck, “In-plane gate transistors in AlxGa1−xN/GaN heterostructures written by focused ion beams,” <i>Superlattices and Microstructures</i>, pp. 381–388, 2004.","short":"A. Ebbers, D. Reuter, M. Heuken, A.D. Wieck, Superlattices and Microstructures (2004) 381–388.","ama":"Ebbers A, Reuter D, Heuken M, Wieck AD. In-plane gate transistors in AlxGa1−xN/GaN heterostructures written by focused ion beams. <i>Superlattices and Microstructures</i>. 2004:381-388. doi:<a href=\"https://doi.org/10.1016/j.spmi.2004.02.012\">10.1016/j.spmi.2004.02.012</a>"},"_id":"8729","publication":"Superlattices and Microstructures","language":[{"iso":"eng"}],"author":[{"first_name":"A.","full_name":"Ebbers, A.","last_name":"Ebbers"},{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"last_name":"Heuken","full_name":"Heuken, M.","first_name":"M."},{"first_name":"A.D.","full_name":"Wieck, A.D.","last_name":"Wieck"}],"year":"2004","title":"In-plane gate transistors in AlxGa1−xN/GaN heterostructures written by focused ion beams","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514"}