{"publication_status":"published","language":[{"iso":"eng"}],"page":"938-941","type":"journal_article","date_updated":"2022-01-06T07:04:00Z","publication":"Physica E: Low-dimensional Systems and Nanostructures","doi":"10.1016/s1386-9477(02)00239-4","author":[{"first_name":"Dirk","last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk"},{"first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","id":"20798","full_name":"Meier, Cedrik"},{"full_name":"Seekamp, A","last_name":"Seekamp","first_name":"A"},{"first_name":"A.D","last_name":"Wieck","full_name":"Wieck, A.D"}],"status":"public","intvolume":"        13","year":"2002","user_id":"20798","citation":{"short":"D. Reuter, C. Meier, A. Seekamp, A.. Wieck, Physica E: Low-Dimensional Systems and Nanostructures 13 (2002) 938–941.","apa":"Reuter, D., Meier, C., Seekamp, A., &#38; Wieck, A. . (2002). Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>13</i>, 938–941. <a href=\"https://doi.org/10.1016/s1386-9477(02)00239-4\">https://doi.org/10.1016/s1386-9477(02)00239-4</a>","chicago":"Reuter, Dirk, Cedrik Meier, A Seekamp, and A.D Wieck. “Fabrication of Two-Dimensional in-Plane Gate Transistors by Focused Ion Beam Doping.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 13 (2002): 938–41. <a href=\"https://doi.org/10.1016/s1386-9477(02)00239-4\">https://doi.org/10.1016/s1386-9477(02)00239-4</a>.","ama":"Reuter D, Meier C, Seekamp A, Wieck A. Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2002;13:938-941. doi:<a href=\"https://doi.org/10.1016/s1386-9477(02)00239-4\">10.1016/s1386-9477(02)00239-4</a>","bibtex":"@article{Reuter_Meier_Seekamp_Wieck_2002, title={Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping}, volume={13}, DOI={<a href=\"https://doi.org/10.1016/s1386-9477(02)00239-4\">10.1016/s1386-9477(02)00239-4</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Reuter, Dirk and Meier, Cedrik and Seekamp, A and Wieck, A.D}, year={2002}, pages={938–941} }","mla":"Reuter, Dirk, et al. “Fabrication of Two-Dimensional in-Plane Gate Transistors by Focused Ion Beam Doping.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 13, 2002, pp. 938–41, doi:<a href=\"https://doi.org/10.1016/s1386-9477(02)00239-4\">10.1016/s1386-9477(02)00239-4</a>.","ieee":"D. Reuter, C. Meier, A. Seekamp, and A. . Wieck, “Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 13, pp. 938–941, 2002."},"date_created":"2019-03-28T15:14:19Z","_id":"8737","title":"Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping","publication_identifier":{"issn":["1386-9477"]},"department":[{"_id":"15"},{"_id":"230"}],"volume":13}