{"user_id":"42514","citation":{"short":"D. Reuter, M. Versen, M.D. Schneider, A.D. Wieck, Journal of Applied Physics (2002) 321–325.","bibtex":"@article{Reuter_Versen_Schneider_Wieck_2002, title={Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities}, DOI={<a href=\"https://doi.org/10.1063/1.373660\">10.1063/1.373660</a>}, journal={Journal of Applied Physics}, author={Reuter, Dirk and Versen, M. and Schneider, M. D. and Wieck, A. D.}, year={2002}, pages={321–325} }","ama":"Reuter D, Versen M, Schneider MD, Wieck AD. Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities. <i>Journal of Applied Physics</i>. 2002:321-325. doi:<a href=\"https://doi.org/10.1063/1.373660\">10.1063/1.373660</a>","chicago":"Reuter, Dirk, M. Versen, M. D. Schneider, and A. D. Wieck. “Increased Mobility Anisotropy in Selectively Doped AlxGa1−xAs/GaAs Heterostructures with High Electron Densities.” <i>Journal of Applied Physics</i>, 2002, 321–25. <a href=\"https://doi.org/10.1063/1.373660\">https://doi.org/10.1063/1.373660</a>.","mla":"Reuter, Dirk, et al. “Increased Mobility Anisotropy in Selectively Doped AlxGa1−xAs/GaAs Heterostructures with High Electron Densities.” <i>Journal of Applied Physics</i>, 2002, pp. 321–25, doi:<a href=\"https://doi.org/10.1063/1.373660\">10.1063/1.373660</a>.","ieee":"D. Reuter, M. Versen, M. D. Schneider, and A. D. Wieck, “Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities,” <i>Journal of Applied Physics</i>, pp. 321–325, 2002.","apa":"Reuter, D., Versen, M., Schneider, M. D., &#38; Wieck, A. D. (2002). Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities. <i>Journal of Applied Physics</i>, 321–325. <a href=\"https://doi.org/10.1063/1.373660\">https://doi.org/10.1063/1.373660</a>"},"department":[{"_id":"15"},{"_id":"230"}],"doi":"10.1063/1.373660","year":"2002","publication_identifier":{"issn":["0021-8979","1089-7550"]},"language":[{"iso":"eng"}],"_id":"8763","date_updated":"2022-01-06T07:04:00Z","status":"public","author":[{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"full_name":"Versen, M.","last_name":"Versen","first_name":"M."},{"full_name":"Schneider, M. D.","last_name":"Schneider","first_name":"M. D."},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."}],"publication_status":"published","date_created":"2019-04-01T07:33:21Z","title":"Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities","publication":"Journal of Applied Physics","type":"journal_article","page":"321-325"}